Small-signal modeling for p-n junctions in the breakdown region at different temperatures using artificial neural networks

References

• Crupi G, Schreurs DMMP, Caddemi A. On the small signal modeling of advanced microwave FETs: a comparative study. Int. J. RF Microwave Comput. Aided Eng. 2008;18:417–425.
   Web of Science ®Google Scholar
• Dambrine G, Cappy A, Heliodore F, et al. A new method for determining the FET small-signal equivalent circuit. IEEE Trans. Microwave Theory Tech. 1988;36:1151–1159.10.1109/22.3650
   Web of Science ®Google Scholar
• Jen SHM, Enz CC, Pehlke DR, et al. Accurate modeling and parameter extraction for MOS transistors valid up to 10 GHz. IEEE Trans. Electron Devices. 1999;46:2217–2227.10.1109/16.796299
   Web of Science ®Google Scholar
• Marinkovic Z, Markovic V. Accurate temperature dependent noise models of microwave transistors based on neural networks. In: 13th GaAs Symposium; Paris; 2005. p. 389–392.
   Google Scholar
• Zhang QJ, Gupta KC. Neural networks for RF and microwave design. Boston, MA: Artech House; 2000.
   Google Scholar
• Yuan XH, Feng QY, Zhou LC. RF power amplifiers behavioral modeling based on extended neural network with additional dynamic fuzzy weights. J. Electromagnet. Waves Appl. 2013;27:1694–1701.10.1080/09205071.2013.823121
   Web of Science ®Google Scholar
• Ayestarán RG, Las-Heras F, Martínez JA. Non uniform-antenna array synthesis using neural networks. J. Electromagnet. Waves Appl. 2007;21:1001–1011.
   Web of Science ®Google Scholar
• Mohamed MDA, Soliman EA, El-Gamal MA. Optimization and characterization of electromagnetically coupled patch antennas using RBF neural networks. J. Electromagnet. Waves Appl. 2006;20:1101–1114.10.1163/156939306776930240
   Web of Science ®Google Scholar
• Lee KC. Mutual coupling analyses of antenna arrays by neural network models with radial basis functions. J. Electromagnet. Waves Appl. 2003;17:1217–1223.10.1163/156939303322519838
   Web of Science ®Google Scholar
• Güney K, Sagiroglu S, Erler M. Comparison of neural networks for resonant frequency computation of electrically thin and thick rectangular microstrip antennas. J. Electromagnet. Waves Appl. 2001;15:1121–1145.10.1163/156939301X00454
   Web of Science ®Google Scholar
• Hayati M, Akhlaghi B. An extraction technique for small signal intrinsic parameters of HEMTs based on artificial neural networks. Int. J. Electron. Commun. 2013;67:123–129.10.1016/j.aeue.2012.07.012
   Web of Science ®Google Scholar
• Lee CI, Lin WC. A novel p-i-n inductor for tunable wideband matching network application. IEEE Trans. Electron Devices. 2013;60:2611–2618.10.1109/TED.2013.2271053
   Web of Science ®Google Scholar
• Lee CI, Lin WC, Lin YT. Modeling inductive behavior of MOSFET scattering parameter S22 in the breakdown regime. IEEE Trans. Microwave Theory Tech. 2012;60:502–508.10.1109/TMTT.2011.2181188
   Google Scholar
• Sze SM. Physics of semiconductor devices. 2nd ed. New York, NY: Wiley; 1981.
   Google Scholar
• Lee CI, Ngo VH, Pan DS. Inductance probing into the semiconductor breakdown. Appl. Phys. Lett. 2006;89:172112–172112-3.
   Web of Science ®Google Scholar
• Lee CI, Pan DS. Theory for high Q p-n junction avalanche inductors. Appl. Phys. Lett. 2006;89:013501–013501-3.
   Google Scholar
• Lee CI, Ngo VH, Pan DS. New phenomena of mixed breakdown in silicon.. Phys. Status Solidi 2006;243:R25–R27.
   Web of Science ®Google Scholar
• Soroosh M, Moravvej-Farshi MK, Saghafi K. A simple empirical model for calculating gain and excess noise in GaAs/AlξGa1-ξAs APDs (0.3 ≤ξ≤ 0.6). IEICE Electron Express 2008;5:853–859.
   Web of Science ®Google Scholar
• Soroosh M, Gity F, Sherafat AR, et al. A neural network model for determination of the breakdown voltage for separate absorption and multiplication region avalanche photodiode (SAM-APD). International Conference on Wireless and Optical Communications Networks; Dubai; 2005. p. 173–177.
   Google Scholar
• Lee CI, Lin WC, Lin YT. A new method to determine avalanche multiplication factor using vector network analyzer for p-n junctions. IEEE Microwave Wireless Compon. Lett. 2014;24:646–648.10.1109/LMWC.2014.2330500
   Web of Science ®Google Scholar
• Na WC, Zhang QJ. Automated knowledge-based neural network modeling for microwave applications. IEEE Microwave Wireless Compon. Lett. 2014;24:499–501.10.1109/LMWC.2014.2316251
   Web of Science ®Google Scholar
• Markovic V, Prasad S, Stosic A. Small-signal and noise modeling of HBTs based on neural network approach. In: Proceedings of 7th International Conference on Telecommunication in Modern Satellite, Cable Broadcasting Services; Serbia and Montenegro; 2005. p. 381–384.
   Google Scholar
• Marinković Z, Crupi G, Schreurs DMMP, et al. Multibias neural modeling of fin field-effect transistor admittance parameters. Microwave Opt. Technol. Lett. 2012;54:2082–2088.10.1002/mop.27020
   Web of Science ®Google Scholar
• Marinković ZD, Pronić OR, Marković VV. Bias-dependent scalable modeling of microwave FETs based on artificial neural networks. Microwave Opt. Technol. Lett. 2006;48:1932–1936.10.1002/(ISSN)1098-2760
   Web of Science ®Google Scholar
• Hagan MT, Menhaj MB. Training feedforward networks with the Marquardt algorithm. IEEE Trans. Neural Networks. 1994;5:989–993.10.1109/72.329697
   PubMed Web of Science ®Google Scholar
• Aaen PH, Wood J, Bridges D, et al. Multiphysics modeling of RF and microwave high-power transistors. IEEE Trans. Microwave Theory Tech. 2012;60:4013–4023.10.1109/TMTT.2012.2224366
   Web of Science ®Google Scholar
• Koolen MCAM, Geelen JAM, Versleijen MPJG. An improved de-embedding technique for on-wafer high-frequency characterization. Proceedings of the Bipolar Circuits and Technology Meeting; Minneapolis, MN; 1991. p. 188–191.10.1109/BIPOL.1991.160985
   Google Scholar
• Bulucea CD, Prisecaru DC. The calculation of the avalanche multiplication factor in silicon p-n junctions taking into account the carrier generation (thermal or optical) in the space-charge region. IEEE Trans. Electron Devices. 1973;20:692–701.10.1109/T-ED.1973.17730
   Web of Science ®Google Scholar
• Elta ME, Haddad GI. Mixed tunneling and avalanche mechanisms in p-n junctions and their effects on microwave transit-time devices. IEEE Trans. Electron Devices. 1978;ED-25:694–702.
   Web of Science ®Google Scholar
• Ohkawa N, Yamada JI, Hagimoto K. Broadband GaAs FET optical front-end circuit up to 5.6 GHz. Electron. Lett. 1986;22:259–260.
   Web of Science ®Google Scholar
• Stefanucci C, Buccella P, Kayal M, et al. Modeling avalanche breakdown for ESD diodes in integrated circuits. International Conference Design & Technology of Integrated Systems in Nanoscale Era; Naples; 2015. p. 1–3.
   Google Scholar