Semiconductor Device Failures in Power Converter Service Conditions

References

• Aloisi P,; Failure diagnosis in medium power semiconductors EPE’s Firenze 1991, pp.3–117, 3–119.
   Google Scholar
• Blackburn D.: Turn-off failure of power MOSFET’s IEEE Trans. on Power Electronics vol. PE-2, No, 2. 1987, pp.136–142.
   Google Scholar
• Blackburn D,; Failure mechanisms and nondestructive testing of bipolar and MOS gated transistors. EPE-MADEP Firenze. 1991, pp.0–251.0–257.
   Google Scholar
• Bleichner H. et al.; Measurements of failure phenomena in inductively loaded multi-cathode GTO thyristors. IEEE Trans, on Electron. Devices, vol. 41, No. 2, 1994, pp. 251–257.
   Google Scholar
• Bleichner H. et.; The effect of emitter shortings on turn-off limitations and device failure in GTO thyristors under snubberless operation. IEEE Trans. on El. Dev., v.42, No.1, 1995. pp. 178–187
   Google Scholar
• Borne., R., Alciisi P., Shumate D.: Avalanche capability of today’s power semiconductors EPE Brighton, voL2 Materials and Devices, 1993, pp.167–172.
   Google Scholar
• Hayasaki Y,; A consideration on turn-Off failure of GTO with amplifying gate. IEEE Trans. on Power Electronics., vol. PE-2. No.2, 1987, pp,90–97
   Google Scholar
• Januszewski S., Kociezewska-Szczerhik M,; Failure physics of high power thyristors (in Polish). Prace Preemyslowego Instytutu Elektroniki, No.115, 1991
   Google Scholar
• Januszewski S., Kociszewska-Szczerbik M., Power semiconductor device failures in converter circuits (in Polish). Piece Instymtu Elektrotechniki No,174, 1993.
   Google Scholar
• Januszewski S., Kociszewska-Szczerbik M., Swiittek H,; Failure mechanisms of power MOSFET transistors, Proc, of the XIII Symposium: Electromagnetic phenomena in non-linear circuits. Poeriafi (Poland), May 1994, pp.207–212.
   Google Scholar
• Januszewski S., Kociszewska-Szczerhik M., Swiatek H; Thyristor service in variable current load conditions (in Polish). Wiartarnorrci Elektrotechniczne, No.10, 1994.
   Google Scholar
• Januszewski S., Kociszewska-Szczeibik M., Stypulkowska E., Swiatek H., Swiatck G.: New generation semiconductor device failures in power electronics equipment. International Conference and Exhibition on Power Electronics, Motion Control and Associated Applications. PEMC’94 Sept_ 1994 Warsaw (PL), pp.856–860.
   Google Scholar
• Januszewski S., Swiatek H.: Modern semiconductor devices in power electronics (in Polish), WNT, Warszawa 1994.
   Google Scholar
• Januszewski S.. Kociszewska-Szczerbik M.. Stypulkowska F., Swiatek H., Swim& G.: Investigation of destroyed parts of surface of high power semiconductor devices in service conditions. Proceedings of the 6th European Symposium Reliability of Electron Devices, Failure Physics and Analysis ESREP95; Oct. 1995. Bordeaux (France)
   Google Scholar
• Januszewski S., Koeiszewska-Szczerbik M., Swiatek H.., Swiatek G.: Causes and mechanisms of semiconductor device failures in power converter service conditions. EPE’ 95, Sevilla (Spain).
   Google Scholar
• Januszewski S., Swiatek H,; Power semiconductor device measurements (in Polish), WKil., Warszawa 1996.
   Google Scholar
• Johnson C.M. et al.; Correlation between local segment characlerisrics and dynamic current redistribution in GTO power thyristors. IEEE Trans. on El. Dev No 5, 1994. pp.793–799.
   Google Scholar
• Matsuda H. et al., Analysis of GTO failure mode during dc-voltage blocking, ISPSD’94 Davos (Switzerland), May 31-June 2 1994, pp 221–225.
   Google Scholar
• Reinmuth K,; A method for nondestructive testing of bipolar transistors, IGBT’s and MOSFET’s EPE Firenze 1991. pp.0–142....0–147.
   Google Scholar
• Rcinmuth K,; Amann H,; The ruggedness of paralleled power MOSFET’s EPE Brighton, 1993, pp.380–384.
   Google Scholar
• Samos I.L. et al,; Power semiconductors empirical diagrams expressing life as a function of temperature excursion. IEEE Trans. on Magnetics, vol.29, No.1, 1993, pp 517–522.
   Google Scholar