Knowledge generation and diffusion in science & technology: an empirical study of SiC-MOSFET based on scientific papers and patents

References

• Ahmadpoor, M., and B. F. Jones. 2017. “The Dual Frontier: Patented Inventions and Prior Scientific Advance.” Science 357 (6351): 583–587.
   PubMed Web of Science ®Google Scholar
• Arnold, E., N. Ramungul, T. P. Chow, and M. Ghezzo. 1998. “Interface States and Field-Effect Mobility in 6H-SiC MOS Transistors.” Materials Science Forum 264-268 (2): 1013–1016.
   Google Scholar
• Arora, A., S. Belenzon, and A. Patacconi. 2018. “The Decline of Science in Corporate R&D.” Strategic Management Journal 39 (1): 3–32.
   Web of Science ®Google Scholar
• Batagelj, V., and A. Mrvar. 2004. “Pajek—Analysis and Visualization of Large Networks.” In Graph Drawing Software, edited by M. Junger and P. Mutzel, 77–103. Berlin, Heidelberg: Springer.
   Google Scholar
• Bikard, M., and M. Marx. 2020. “Bridging Academia and Industry: How Geographic Hubs Connect University Science and Corporate Technology.” Management Science 66 (8): 3425–3443.
   Web of Science ®Google Scholar
• Billon, T., T. Ouisse, P. Lassagne, C. Jassaud, and J. L. Ponthenier. 1994. “High Temperature Silicon Carbide MOSFETs with Very low Drain Leakage Current.” Electronics Letters 30 (2): 170–171.
   Web of Science ®Google Scholar
• Braunerhjelm, P., D. Ding, and P. Thulin. 2016. “Labour as a Knowledge Carrier: How Increased Mobility Influences Entrepreneurship.” The Journal of Technology Transfer 41 (6): 1308–1326.
   Web of Science ®Google Scholar
• Breitzman, A. F., and M. E. Mogee. 2002. “The Many Applications of Patent Analysis.” Journal of Information Science 28 (3): 187–205.
   Web of Science ®Google Scholar
• Casady, J. B., J. D. Cressler, W. C. Dillard, R. W. Johnson, A. K. Agarwal, and R. R. Siergiej. 1996. “Direct Current Characterization of Depletion-Mode 6H-SiC MOSFETs from 294 to 723 K.” Solid-State Electronics 39 (6): 777–784.
   Web of Science ®Google Scholar
• Casady, J. B., W. Dillard, R. W. Johnson, A. K. Agarwal, R. R. Siergiej, and W. E. Wagner. 1995. “Low Frequency Noise in 6H-SiC MOSFET's.” IEEE Electron Device Letters 16 (6): 274–276.
   Web of Science ®Google Scholar
• Casady, J. B., A. K. Agarwal, L. B. Rowland, S. Seshadri, R. R. Siergiej, D. C. Sheridan, S. Mani, P. A. Sanger, and C. D. Brandt. 1997. “Silicon Carbide Power MOSFET Technology.” Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors, 359-362. IEEE.
   Google Scholar
• Chen, C. 2020. CiteSpace 5.6 R3. Retrieved 03-12, 2020, from https://sourceforge.net/projects/citespace/files/.
   Google Scholar
• Chen, J., X. Du, Q. Luo, X. Zhang, P. Sun, and L. Zhou. 2020. “A Review of Switching Oscillations of Wide Bandgap Semiconductor Devices.” IEEE Transactions on Power Electronics 35 (12): 13182–13199.
   Web of Science ®Google Scholar
• Chilukuri, R. K., P. M. Shenoy, and B. J. Baliga. 1999. “High-temperature Operation of SiC Planar ACCUFET.” IEEE Transactions on Industry Applications 35 (6): 1458–1462.
   Web of Science ®Google Scholar
• Dunning, T. E. 1993. “Accurate Methods for the Statistics of Surprise and Coincidence.” Computational Linguistics 19 (1): 61–74.
   Google Scholar
• Fleming, L. 2001. “Recombinant Uncertainty in Technological Search.” Management Science 47 (1): 117–132.
   Web of Science ®Google Scholar
• Fleming, L., and O. Sorenson. 2004. “Science as a map in Technological Search.” Strategic Management Journal 25 (8): 909–928.
   Web of Science ®Google Scholar
• Fukuzawa, N., and T. Ida. 2016. “Science Linkages Between Scientific Articles and Patents for Leading Scientists in the Life and Medical Sciences Field: The Case of Japan.” Scientometrics 106 (2): 629–644.
   Web of Science ®Google Scholar
• Gazni, A. 2020. “The Growing Number of Patent Citations to Scientific Papers: Changes in the World, Nations, and Fields.” Technology in Society 62: 101276.
   Web of Science ®Google Scholar
• Grieb, M., M. Noborio, D. Peters, A. J. Bauer, P. Friedrichs, T. Kimoto, and H. Ryssel. 2010. “Comparison of the Threshold-Voltage Stability of SiC MOSFETs with Thermally Grown and Deposited Gate Oxides.” Materials Science Forum 645-648: 681–684.
   Google Scholar
• Guo, Y. M., Z. L. Huang, J. Guo, X. R. Guo, H. Li, M. Y. Liu, S. Ezzeddine, and M. J. Nkeli. 2021. “A Bibliometric Analysis and Visualization of Blockchain.” Future Generation Computer Systems 116: 316–332.
   Web of Science ®Google Scholar
• Hirsch, J. E. 2005. “An Index to Quantify an Individual’s Scientific Research Output.” Proceedings of the National Academy of Sciences 102 (46): 16569–16572.
   PubMed Web of Science ®Google Scholar
• Hummon, N. P., and P. Doreain. 1989. “Connectivity in a Citation Network: The Development of DNA Theory.” Social Networks 11 (1): 39–63.
   Web of Science ®Google Scholar
• Jaffe, A. B., M. Trajtenberg, and R. Henderson. 1993. “Geographic Localization of Knowledge Spillovers as Evidenced by Patent Citations.” The Quarterly Journal of Economics 108 (3): 577–598.
   Web of Science ®Google Scholar
• Johanson, M., P. T. Kao, and H. Lundberg. 2020. “Knowledge Grafting During Internationalization: Utilizing Localized Professionals in the Foreign Market.” Journal of Knowledge Management 24 (9): 2009–2033.
   Web of Science ®Google Scholar
• Jung, H., and B. G. Lee. 2020. “Research Trends in Text Mining: Semantic Network and Main Path Analysis of Selected Journals.” Expert Systems with Applications 162: 113851.
   Web of Science ®Google Scholar
• Kimoto, T., H. Kawano, and J. Suda. 2005. “1330 V, 67 m Omega Center dot cm (2) 4H-SiC (0001) RESURF MOSFET.” IEEE Electron Device Letters 26 (9): 649–651.
   Web of Science ®Google Scholar
• Kondo, Y., T. Takahashi, K. Ishii, Y. Hayashi, E. Sakuma, S. Misawa, H. Daimon, M. Yamanaka, and S. Yoshida. 1986. “Experimental 3C-SiC MOSFET.” IEEE Electron Device Letters 7 (7): 404–406.
   Web of Science ®Google Scholar
• Kumar, A. 2021. “Comparing Scientific Productivity Using Scopus and Web of Science (WoS): A Case of Indian R&D Laboratories.” Asian Journal of Technology Innovation 29 (3): 414–426.
   Web of Science ®Google Scholar
• Kumar, A., A. Srivastava, R. J. Kumar, and R. K. Tiwari. 2018. “Analyzing Indian Research and Development Organizations: A SWOT Analysis.” International Journal of Innovation Science 10 (3): 298–315.
   Web of Science ®Google Scholar
• Lee, N. K., Y. Han, W. Xong, and M. Song. 2020. “Two Layer-Based Trajectory Analysis of the Research Trend in Automotive Fuel Industry.” Scientometrics 124: 1701–1719.
   Web of Science ®Google Scholar
• Lelis, A. J., R. Green, D. B. Habersat, and M. El. 2015. “Basic Mechanisms of Threshold-Voltage Instability and Implications for Reliability Testing of SiC MOSFETs.” IEEE Transactions on Electron Devices 62 (2): 316–323.
   Web of Science ®Google Scholar
• Li, J., F. Goerlandt, and G. Reniers. 2021. “An Overview of Scientometric Mapping for the Safety Science Community: Methods, Tools, and Framework.” Safety Science 134: 105093.
   Web of Science ®Google Scholar
• Liu, J., A. Grubler, T. Ma, and D. F. Kogler. 2021. “Identifying the Technological Knowledge Depreciation Rate Using Patent Citation Data: A Case Study of the Solar Photovoltaic Industry.” Scientometrics 126 (1): 93–115.
   Web of Science ®Google Scholar
• Liu, J., L. Lu, and M. Ho. 2019. “A few Notes on Main Path Analysis.” Scientometrics 119 (1): 379–391.
   Web of Science ®Google Scholar
• Meyer, M. 2000. “Does Science Push Technology? Patents Citing Scientific Literature.” Research Policy 29 (3): 409–434.
   Web of Science ®Google Scholar
• Narin, F. 1994. “Patent Bibliometrics.” Scientometrics 30 (1): 147–155.
   Web of Science ®Google Scholar
• Noborio, M., J. Suda, and T. Kimoto. 2009. “Enhanced Channel Mobility in 4H-SiC MISFETs by Utilizing Deposited SiN/SiO2 Stack Gate Structures.” Materials Science Forum 600-603: 679–682.
   Google Scholar
• Östling, M. 2011. “High Power Devices in Wide Bandgap Semiconductors.” Science China Information Sciences 54 (5): 1087–1093.
   Web of Science ®Google Scholar
• Ouisse, T. 1997. “Electron Transport at the SiC/SiO2 Interface.” Physica Status Solidi (a) 162 (1): 339–368.
   Google Scholar
• Palmour, J. W., L. A. Lipkin, R. Singh, D. B. Slater Jr, A. V. Suvorov, and C. H. Carter Jr. 1997. “SiC Device Technology: Remaining Issues.” Diamond and Related Materials 6 (10): 1400–1404.
   Web of Science ®Google Scholar
• Pande, P., D. Haasmann, J. Han, H. A. Moghadam, P. Tanner, and S. Dimitrijev. 2020. “Electrical Characterization of SiC MOS Capacitors: A Critical Review.” Microelectronics Reliability 112: 113790.
   Web of Science ®Google Scholar
• Pelacho, M., G. Ruiz, F. Sanz, A. Tarancón, and J. Clemente-Gallardo. 2021. “Analysis of the Evolution and Collaboration Networks of Citizen Science Scientific Publications.” Scientometrics 126 (1): 225–257.
   Web of Science ®Google Scholar
• Perianes-Rodriguez, A., L. Waltman, and N. J. Van Eck. 2016. “Constructing Bibliometric Networks: A Comparison Between Full and Fractional Counting.” Journal of Informetrics 10 (4): 1178–1195.
   Web of Science ®Google Scholar
• Peters, D., R. Schöner, P. Friedrichs, and D. Stephani. 2002. “4H-SiC Power MOSFET Blocking 1200V with a Gate Technology Compatible with Industrial Applications.” Materials Science Forum 433 (4): 769–772.
   Google Scholar
• Puschkarsky, K., T. Grasser, T. Aichinger, W. Gustin, and H. Reisinger. 2019. “Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage Instability.” IEEE Transactions on Electron Devices 66 (11): 4604–4616.
   Web of Science ®Google Scholar
• Puschkarsky, K., H. Reisinger, T. Aichinger, W. Gustin, and T. Grasser. 2018. “Understanding BTI in SiC MOSFETs and its Impact on Circuit Operation.” IEEE Transactions on Device and Materials Reliability 18 (2): 144–153.
   Web of Science ®Google Scholar
• Rosenberg, N. 1982. Inside the Black Box: Technology and Economics. Cambridge: Cambridge University Press.
   Google Scholar
• Saks, N. S., and A. K. Agarwal. 2000. “Hall Mobility and Free Electron Density at the SiC/SiO2 Interface in 4H–SiC.” Applied Physics Letters 77 (20): 3281–3283.
   Web of Science ®Google Scholar
• Saks, N. S., S. S. Mani, and A. K. Agarwal. 2000. “Interface Trap Profile Near the Band Edges at the 4H-SiC/SiO2 Interface.” Applied Physics Letters 76 (16): 2250–2252.
   Web of Science ®Google Scholar
• Schörner, R., P. Friedrichs, and D. Peters. 1999. “Detailed Investigation of n-Channel Enhancement 6H-SiC MOSFETs.” IEEE Transactions on Electron Devices 46 (3): 533–541.
   Web of Science ®Google Scholar
• Shibahara, K., T. Saito, S. Nishino, and H. Matsunami. 1986. “Fabrication of Inversion-Type n-Channel MOSFET's Using Cubic-SiC on Si.” IEEE Electron Device Letters 7 (12): 692–693.
   Web of Science ®Google Scholar
• Singh, J. 2005. “Collaborative Networks as Determinants of Knowledge Diffusion Patterns.” Management Science 51 (5): 756–770.
   Web of Science ®Google Scholar
• Van Eck, N. J., and L. Waltman. 2010. “Software Survey: VOSviewer, a Computer Program for Bibliometric Mapping.” Scientometrics 84 (2): 523–538.
   PubMed Web of Science ®Google Scholar
• Wang, J. J., and Y. Y. Fred. 2021. “Probing Into the Interactions Between Papers and Patents of new CRISPR/CAS9 Technology: A Citation Comparison.” Journal of Informetrics 15 (4): 101189.
   Web of Science ®Google Scholar
• Wang, J., and X. Jiang. 2020. “Review and Analysis of SiC MOSFETs’ Ruggedness and Reliability.” IET Power Electronics 13 (3): 445–455.
   Web of Science ®Google Scholar
• Xie, W., J. A. Cooper, and M. R. Melloch. 1994. “Monolithic NMOS Digital Integrated Circuits in 6H-SiC.” IEEE Electron Device Letters 15 (11): 455–457.
   Web of Science ®Google Scholar
• Xu, S., L. Hao, X. An, H. Pang, and T. Li. 2020. “Review on Emerging Research Topics with key-Route Main Path Analysis.” Scientometrics 122 (1): 607–624.
   Web of Science ®Google Scholar
• Yamashita, Y. 2020. “An Attempt to Identify Technologically Relevant Papers Based on Their References.” Scientometrics 125 (2): 1783–1800.
   Web of Science ®Google Scholar
• Yano, H., T. Hirao, T. Kimoto, and H. Matsunami. 2001. “A Cause for Highly Improved Channel Mobility of 4H-SiC Metal–Oxide–Semiconductor Field-Effect Transistors on the (112̄0) Face.” Applied Physics Letters 78 (3): 374–376.
   Web of Science ®Google Scholar
• Yano, H., F. Katafuchi, T. Kimoto, and H. Matsunami. 1999. “Effects of wet Oxidation/Anneal on Interface Properties of Thermally Oxidized SiO/sub 2//SiC MOS System and MOSFET's.” IEEE Transactions on Electron Devices 46 (3): 504–510.
   Web of Science ®Google Scholar
• Zhang, G., Liu, L., & Wei, F. (2019). Key Nodes Mining in the Inventor–Author Knowledge Diffusion Network. Scientometrics, 118(3), 721-735.
   Web of Science ®Google Scholar