References
- Krivoshlykov, S.G.; Rupasov, V.I. Photovoltaic Effect in Semiconductor Nanocrystals Embedded Into Amorphous Silicon p-n Junction. Appl. Phys. Lett. 2008, 93 (4), 043116–043119. doi: 10.1063/1.2958235
- Lee, S.B.; Park, S.; Lee, J.S.; Chae, S.C.; Chang, S.H.; Jung, M.H.; Jo, Y.; Kahng, B.; Kang, B.S.; Lee, M.-J.; Noh, T.W. Large 1/f Noise of Unipolar Resistance Switching and Its Percolating Nature. Appl. Phys. Lett 2009, 95 (12), 122112–122115. doi: 10.1063/1.3237167
- Ou-Yang, W.; Weis, M.; Taguchi, D.; Chen, X.; Manaka, T.; Iwamoto, M. Modeling of Threshold Voltage in Pentacene Organic Field-Effect Transistors. J. Appl. Phys. 2010, 107 (12), 124506–124511. doi: 10.1063/1.3449078
- Jagadesh Kumar, M.; Vir Singh, T. Int. J. Nanosci. 2008, 7 (2–3), 81–84. doi: 10.1142/S0219581X08005195
- Saturin, S.M.; Banshchikov, A.G.; Sokolov, N.S.; Tyaginov, S.E.; Vexler, M.I. Static Current-Voltage Characteristics of Au/CaF2/n-Si(111) MIS Tunneling Structures. Semiconductors 2008, 42 (11), 1304–1308. doi: 10.1134/S1063782608110110
- Lachin, V.I.; Savelov, N.S. Electronics; Rostov-on-Don: Phoenix, 2001.
- Gotra, Z.Y. Technology of Microelectronic Devices; Radio and Communication: Moscow, 1991.
- Ryssel, H.; Ruge, I. Ion Implantation; B.G. Teubner: Stuttgart, 1978.
- Vinetsky, V.L.; Kholodar’, G.A. Radiation Physics of Semiconductors; Naukova Dumka: Kiev, 1979.
- Fahey, P.M.; Griffin, P.B.; Plummer, J.D. Point Defects and Dopant Diffusion in Silicon. Rev. Mod. Phys 1989, 61 (2), 289–384. doi: 10.1103/RevModPhys.61.289
- Sokolov, Y.D. Appl. Math. (Irvine) 1955, 1 (1), 23.
- Pankratov, E.L. Redistribution of Dopant During Microwave Annealing of a Multilayer Structure for Production p−n Junction. J. Appl. Phys 2008, 103 (6), 064320–064330. doi: 10.1063/1.2887989
- Pankratov, E.L. SPIE Proceedings. Proc. SPIE 2010, 7521, 75211D. doi: 10.1117/12.853230
- Pankratov, E.L. Variation of Concentration of Charge Carriers in a Diffusion-Junction Rectifier Under the Influence of Radiation Processing of Materials. Radiat. Eff. Defects Solids 2019, 174 (9-10), 844–858. doi: 10.1080/10420150.2019.1667355
- Pankratov, E.L. On Approach to Optimize Manufacturing of Bipolar Heterotransistors Framework Circuit of an Operational Amplifier to Increase Their Integration Rate. Influence Mismatch-Induced Stress. J. Comput. Theor. Nanosci. 2017, 14 (10), 4885–4899. doi: 10.1166/jctn.2017.6899
- Zavidovskii, I.A.; Streletskii, O.A.; Nishchak, O.Y.; Khaidarov, A.A. The Effect of the Ion Assistance Energy on the Electrical Resistivity of Carbon Films Prepared by Pulsed Plasma Deposition in a Nitrogen Atmosphere. Phys. Solid State 2019, 61 (11), 2228–2232. doi: 10.1134/S1063783419110428
- Kulikov, N.A.; Popov, V.D. Effect of the Electric Mode and γ Irradiation on Surface-Defect Formation at the Si–SiO2 Interface in a MOS Transistor. Semiconductors 2019, 53 (1), 110–113. doi: 10.1134/S1063782619010123
- Kozlovskii, V.V.; Korol'kov, O.; Dovydovskaya, K.S.; Lebedev, A.A.; Levinshtein, M.E.; Slepchuk, N.; Strel'chuk, A.M.; Toompuu, J. Tech. Phys. Lett. 2020, 46 (3), 35–37. doi: 10.1134/S1063785020030244
- Korn, G.; Korn, T. Mathematical Handbook for Scientists and Engineers. Definitions, Theorems and Formulas for Reference and Review. 2nd ed.; McGraw-Hill Book Company: New York, 1968.