Modeling the Etching Rate and Uniformity of Plasma-Aided Manufacturing Using Statistical Experimental Design

REFERENCES

• Box , G.E.P. ; Draper , N.R. Empirical Model-Building and Response Surfaces ; Wiley : New York , 1987 ; 1 pp .
   Google Scholar
• Low , K.K. ; Director , S.W. Efficient methodology for building macromodels of IC fabrication processes . IEEE Trans. Computer Aided Design 1989 , 8 ( 12 ), 1299 – 1313 .
   Web of Science ®Google Scholar
• Riley , P.E. ; Hanson , D.A. Study of etch rate characteristics of SF6/He plasmas by response-surface methodology: effects of interelectrode spacing . IEEE Trans. Semicond. Manufact. 1989 , 2 ( 4 ), 178 – 182 .
   Web of Science ®Google Scholar
• Riley , P.E. ; Turley , A.P. ; Malkowski , W.I. Development of a multistep SiO2 plasma etching process in a minibatch reactor using response-surface methodology . J. Electrochem. Soc. 1989 , 136 ( 4 ), 1112 – 1119 .
   Web of Science ®Google Scholar
• Gogolides , E. ; Sawin , H.H. n + -Polysilicon etching in CCl₄/He discharges: characterization and modeling. J. Electrochem. Soc. 1989 , 136 ( 4 ), 1147 – 1154 .
   Web of Science ®Google Scholar
• Karulkar , P.C. ; Wirzbicki , M.A. Characterization of etching of silicon dioxide and photoresist in a fluorocarbon plasma . J. Vac. Sci. Techno. B 1988 , 6 ( 5 ), 1595 – 1599 .
   Web of Science ®Google Scholar
• Thompson , B.E. ; Sawin , H.H. Polysilicon etching in SF6 RF discharges . J. Electrochem. Soc. 1986 , 133 ( 9 ), 1887 – 1895 .
   Web of Science ®Google Scholar
• Riley , P.E. Development of a highly uniform silicon dioxide etching process using response-surface methodology . J. Electrochem. Soc. 1986 , 133 ( 9 ), 1971 – 1972 .
   Web of Science ®Google Scholar
• Ienkins , M.W. ; Mocella , M.T. ; Allen , K.D. ; Sawin , H.H. The modeling of plasma etching processes using response-surface methodology . Solid State Tech. 1986 , 175 – 182 .
   Web of Science ®Google Scholar
• Edelson , D. ; Flamm , D. Computer simulation of a CF4 plasma etching silicon . J. App. Phy. 1984 , 56 , 1522 – 1531 .
   Web of Science ®Google Scholar
• Flamm , D. ; Donnelly , V. ; Ibbotson , D. Basic chemistry and mechanisms of plasma etching . Semiconductor International 1983 , 6 , 136 – 143 .
   Google Scholar
• Mathews , P.G. Design of Experiments with MINITAB ; Milwaukee , Wis. ASQ Quality Press , 2005 ; 94 pp.
   Google Scholar
• IPC Acceptability Standard, Acceptability of Printed Boards, IPC-A-600F, 1999 .
   Google Scholar
• Kim , B. ; Park , G.T. Modeling plasma equipment using neural networks . IEEE Transactions on Plasma Science 2001 , 29 ( 1 ), 8 – 12 .
   Web of Science ®Google Scholar
• Box , G.E.P. ; Hunter , W.G. ; Hunter , J.S. Statistics for Experimenters. An Introduction to Design, Data Analysis, and Model Building ; John Wiley & Sons : New York , 1978 ; 398 pp.
   Google Scholar
• Lenth , R.V. Quick and easy analysis of unreplicated factorials . Technometrics 1989 , 31 , 469 – 473 .
   Web of Science ®Google Scholar
• Montgomery , D.C. Design and Analysis of Experiments, , 3rd ed. ; John Wiley & Sons , 1991 ; 416 pp.
   Google Scholar
• Nair , V.N. ; Pregibon , D. Analyzing dispersion effects from repli-cated factorial experiments . Technometrics 1988 , 30 , 247 – 257 .
   Web of Science ®Google Scholar
• Pan , G. The impact of unidentified location effects on dispersion-effects identification from unreplicated factorial designs . Technometrics 1999 , 41 , 313 – 326 .
   Web of Science ®Google Scholar
• Plackett , R.L. ; Burman , J.P. The design of optimum multifactorial experiments . Biometrika 1946 , 34 , 255 – 272 .
   Google Scholar
• Bower , D.H. Planar plasma etching of polysilicon using CCl4 and NF3 . J. Electrochem. Soc. 1982 , 129 ( 4 ), 795 – 799 .
   Web of Science ®Google Scholar
• Zarowin , C.B. ; Horwath , R.S. Control of plasma etch profiles with plasma sheath electric field and RF power density . J. Electrochem. Soc. 1982 , 129 ( 11 ), 2541 – 2547 .
   Web of Science ®Google Scholar
• Battey , J.F. Design criteria for uniform reaction rates in an oxygen plasma . IEEE Trans. Electron Devices 1977 , 24 , 140 – 146 .
   Web of Science ®Google Scholar
• Zarowin , C.F. Plasma etch anisotropy—theory and some verifying experiments relating ion transport, ion energy, and etch profiles . J. Electrochem. Soc. 1983 , 130 , 1144 – 1152 .
   Web of Science ®Google Scholar