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Integrated Ferroelectrics
An International Journal
Volume 40, 2001 - Issue 1-5
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Original Articles

Circuits simulation of switch devices furnished with gain cell combined to FeRAM

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Pages 113-121 | Received 14 Mar 2001, Published online: 19 Aug 2006

References

  • Fujii , Y. 2001 . Physical Insights on Imprint and Application to Functional Memory with Ferroelectric Materials . Integrated Ferroelectrics An International Journal , 33 : 1313 – 1322 .
  • Yoon , Sung-Min . 2000 . A Novel FET-Type Ferroelectric Memory with Excellent Data Retention Characteristics . IEDM Technical Digest , : 317 – 320 .
  • Nakaiso , T. 2000 . Low-Temperture Preparation of Sr2(Ta1-r, Nbx)2O7 Thin Films by Pulsed Laser Deposition and its Electrical Properties . Jpn. J. Appl. Phys. , 39 : 5517 – 5520 .
  • Meindl , James D. 1995 . Low Power Microelectronics: Retrospect and Prospect . Proceeding of the IEEE , 83 ( .4 ) April : 619 – 635 .
  • Hidaka , H. 1992 . A 34-ns 16-Mb DRAM with Controllable Voltage Down-Converter . IEEE journal of SSC , 27 ( 7 ) July : 1020 – 1027 .
  • Tanabe , N. 1995 . A Ferroelectric Capacitor over Bit-line(F-COB) Cell for High Density Nonvolatile Ferroelectric Memories . Symposium on VLSI Technology Digest of Technical Papers , : 123 – 124 .
  • Ikeno , S. 1986 . Gendai Ango Riron, Denshi Tsushin Gakkai , in Japanese

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