Effect of leakage current through ferroelectric and insulator on retention characteristics of metal-ferroelectric-insulator-semiconductor structure

Mitsue Takahashi Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, 560-8531, Japan

Kazushi Kodama Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, 560-8531, Japan

Toshiyuki Nakaiso Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, 560-8531, Japan

Minoru Noda Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, 560-8531, Japan

Masanori Okuyama Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, 560-8531, Japan

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Effect of leakage current through ferroelectric and insulator on retention characteristics of metal-ferroelectric-insulator-semiconductor structure

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Effect of leakage current through ferroelectric and insulator on retention characteristics of metal-ferroelectric-insulator-semiconductor structure

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