Effect of NO(Si₃N₄/SiO₂) layers on the electrical properties of mfisfet using SBT (SrBi₂Ta₂O₉) materials

In-Kyu You Micro-Electronics Technology Lab., ETRI, Taejon, 305-350, Korea

Won Jae Lee Micro-Electronics Technology Lab., ETRI, Taejon, 305-350, Korea

Il-Suk Yang Micro-Electronics Technology Lab., ETRI, Taejon, 305-350, Korea

Byoung Gon Yu Micro-Electronics Technology Lab., ETRI, Taejon, 305-350, Korea

Kyoung-Ik Cho Micro-Electronics Technology Lab., ETRI, Taejon, 305-350, Korea

Shi-Ho Kim Wonkwang University, Iksan, Jeonbuk, 570-749, Korea

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Effect of NO(Si₃N₄/SiO₂) layers on the electrical properties of mfisfet using SBT (SrBi₂Ta₂O₉) materials

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Effect of NO(Si3N4/SiO2) layers on the electrical properties of mfisfet using SBT (SrBi2Ta2O9) materials

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Effect of NO(Si₃N₄/SiO₂) layers on the electrical properties of mfisfet using SBT (SrBi₂Ta₂O₉) materials