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Integrated Ferroelectrics
An International Journal
Volume 65, 2004 - Issue 1
28
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Original Articles

Multiple Bit Operation of MFISFET With Pt/SrBi2Ta2O9/Y2O3/Si Gate Structure

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Pages 203-211 | Received 01 May 2004, Accepted 01 Aug 2004, Published online: 11 Aug 2010

REFERENCES

  • Choi , Min-Kyu , Jeon , Byung-Gil , Jang , Nakwon , Min , Byung-Jin , Song , Yoon-Jong , Yung Lee , Sung , Kim , Hyun-Ho , Jung , Ding0Jin , Joo , Heung-Jin and Kim , Kinam . 2002 . A 0.25 μm 3.0 V 1T1C 32 Mb Nonvolitile Ferroelectric RAM, with Address Transition Detector (ATD) and Current Forcing Latch Sense Amplifier(CFLSA) Scheme . ISSCC Digest of Technical Papers , : 162 – 457 .
  • Kim , Kwang-Ho , Han , Jin-Ping , Jung , Soon-Won and Ma , Tso-Ping . 2002 . Ferroelectric DRAM (FEDRAM) FET with metal/SrBi2Ta2O9/SiN/Si gate structure . IEEE Electron Device Letters. , 23 : 82 – 84 . http://www.csa.com/htbin/linkabst.cgi?issn=0741-3106&vol=23&iss=&firstpage=82
  • Chin , Albert , Yang , M. Y. , Sun , C. L. and Chen , S. Y. 2001 . Stack gate PZT/Al2O3 One transistor ferroelectric memory . IEEE Electron Device Letters , 22 : 336 – 338 . http://dx.doi.org/10.1109%2F55.930683 http://www.csa.com/htbin/linkabst.cgi?issn=0741-3106&vol=22&iss=&firstpage=336
  • Zhang , Fengyan , Teng Hsu , Sheng , Ono , Yoshi , Ulrich , Bruce , Zhuang , Weiwei , Ying , Hong , Stecker , Lisa , Evans , DavidR. and Maa , Jershen . 2001 . Fabrication and Cahracterization of Sub-Micron Metal-Ferroelectric-Insulator-Semiconductor Field Effect Transistors with Pt/ Pb5Ge3O11/ZrO2/Si structure . Jpn. J. Appl. Phys. , 40 ( 2 ) : L635 – L637 . http://dx.doi.org/10.1143%2FJJAP.40.L635 http://www.csa.com/htbin/linkabst.cgi?issn=0021-4922&vol=40&iss=2&firstpage=L635
  • kyun Lee , Sung , Tae Kim , Yong , Kim , Seong-Il and Eui Lee , Cheol . 2002 . Effects of coercive voltage and charge injection on memory windows of metla-=ferroelectric-semiconductor and metal-ferroelectric-insulator-semiconductor gate structures . J. Appl. Phys. , 91 : 9303 – 9307 . http://dx.doi.org/10.1063%2F1.1467629
  • Tae Kim , Yong and Suk Shin , Dong . 1997 . Memory window of Pt/SrBi2Ta2O9/CeO2/SiO2/Si structure for metal ferroelectric insulator semiconductor field effect transistor . Appl. Phys. Lett. , 71 : 3507 – 3509 . http://dx.doi.org/10.1063%2F1.120374
  • Sasago , Y. , Kurata , H. , Arigane , T. , Otsuga , K. , Kobayashi , T. , Ikeda , Y. , Fukumura , T. , Narumi , S. , Sato , A. , Terauchi , T. , shimizu , M. , Noda , S. , Kozakai , K. , Tsuchiya , O. and Furusawa , K. 2003 . 90-nm-node multi-level Ag-AND type flash memory with cell size of true 2F2/bit and programming throughput of 10 MB/s . Eelctron devices Meeting , : 34.2.1 – 34.2.4 .
  • Cho , Taehee , Lee , Young-Taek , Kim , Euncheol , Lee , Jinwook , Choi , Sunmi , Lee , Seungjae , Kim , Dong-Hwan , Han , Wook-Kee , Lim , Young-Ho , Lee , Jae-Duk , Choi , Jung-Dal and Suh , Kang-deog . 2001 . A 3.3 V 1 Gb multi-level NAND flash memory with non-uniform threshold voltage distribution . ISSCC Digest of Technical Papers. , 424 : 28 – 29 .
  • Onisawa , Ken-ichi , Fuyama , Moriaki , Tamura , Katsumi , Taguchi , Kazuo , Nakayama , Takahiro and Ono , YoshimasaA. 1990 . Dielectric properties of rf-sputtered Y2O3 thin film . J. Appl. Phys. , 68 : 719 – 723 . http://dx.doi.org/10.1063%2F1.346804
  • Mikkhaelashvili , V. , Betzer , Y. , Prudnikov , I. , Orenstein , M. , Ritter , D. and Eisenstein , G. 1998 . Electrical characteristics of metal-dielectric-metal and metal-dielectric-semiconductor structures based on electron beam evaporated Y2O3, Ta2O5, and Al2O3 thin film . J. Appl. Phys. , 84 : 6747 – 6752 . http://dx.doi.org/10.1063%2F1.369002
  • Lee , Young-Joon , Jeong , chang-Hyun , Bae , Jeong-Woon , You , In-Kyu , Park , Jong-Wan and Yeom , Geun-Young . 2001 . Etch characteristics of SrBi2Ta2O9 (SBT) thin films using magnetized inductively coupled plasmas . Thin Solid Films. , 389–399 : 652 – 656 . http://dx.doi.org/10.1016%2FS0040-6090%2801%2901371-2
  • Il Shim , Sun , Suk Kwon , Young , Kim , Seong-Il , Tae Kim , Young and Ho Park , Jung . 2004 . Selective etching process of SrBi2Ta2O9 and CeO2 for self aligned ferroelectric gate structure . J. Vac. Sci. Technol. A , 22 : 1559 – 1563 . http://dx.doi.org/10.1116%2F1.1701859

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