Advanced search
Publication Cover
Integrated Ferroelectrics
An International Journal
Volume 66, 2004 - Issue 1
Submit an article Journal homepage
28
Views
1
CrossRef citations to date
0
Altmetric
Original Articles

Highly Reliable and Void-Free IMD Technology for High Density FRAM Device

S. K. KANG Advanced Technology Development Team Memory Division Semiconductor Business Samsung Electronics Co. Ltd. San #24, Nongseo-Ri Giheung-Eup, Yongin-City, Korea
,
Y. J. SONG Advanced Technology Development Team Memory Division Semiconductor Business Samsung Electronics Co. Ltd. San #24, Nongseo-Ri Giheung-Eup, Yongin-City, Korea
,
H. J. JOO Advanced Technology Development Team Memory Division Semiconductor Business Samsung Electronics Co. Ltd. San #24, Nongseo-Ri Giheung-Eup, Yongin-City, Korea
,
H. H. KIM Advanced Technology Development Team Memory Division Semiconductor Business Samsung Electronics Co. Ltd. San #24, Nongseo-Ri Giheung-Eup, Yongin-City, Korea
,
J. H. PARK Advanced Technology Development Team Memory Division Semiconductor Business Samsung Electronics Co. Ltd. San #24, Nongseo-Ri Giheung-Eup, Yongin-City, Korea
,
Y. M. KANG Advanced Technology Development Team Memory Division Semiconductor Business Samsung Electronics Co. Ltd. San #24, Nongseo-Ri Giheung-Eup, Yongin-City, Korea
,
E. Y. KANG Advanced Technology Development Team Memory Division Semiconductor Business Samsung Electronics Co. Ltd. San #24, Nongseo-Ri Giheung-Eup, Yongin-City, Korea
,
S. Y. LEE Advanced Technology Development Team Memory Division Semiconductor Business Samsung Electronics Co. Ltd. San #24, Nongseo-Ri Giheung-Eup, Yongin-City, Korea
&
KINAM KIM Advanced Technology Development Team Memory Division Semiconductor Business Samsung Electronics Co. Ltd. San #24, Nongseo-Ri Giheung-Eup, Yongin-City, Korea
 show all
Pages 29-34 | Received 01 May 2004, Accepted 01 Jul 2004, Published online: 12 Aug 2010

REFERENCES

  • Song , Y. J. , Joo , H. J. , Jang , N. W. , Lee , S. Y. , Kim , H. H. , Park , Y. S. and Kim , Kinam . 2002 . Integrated Ferroelectrics , 48 : 231 – 238 .

Reprints and Corporate Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

To request a reprint or corporate permissions for this article, please click on the relevant link below:

Order Reprints Request Corporate Permissions

Academic Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

Obtain permissions instantly via Rightslink by clicking on the button below:

Request Academic Permissions

If you are unable to obtain permissions via Rightslink, please complete and submit this Permissions form. For more information, please visit our Permissions help page.

Related research

People also read lists articles that other readers of this article have read.

Recommended articles lists articles that we recommend and is powered by our AI driven recommendation engine.

Cited by lists all citing articles based on Crossref citations.
Articles with the Crossref icon will open in a new tab.