Integration of MOCVD SBT Stacked Ferroelectric Capacitors in a 0.35 μ m CMOS Technology

REFERENCES

• The International Technology Roadmap for Semiconductors 2003 . Process Integration, Devices & Structures; Non-volatile Memory Technology Requirements
   Google Scholar
• Zambrano , R. 2003 . Integrated Ferroelectrics , 53 : 247
   Web of Science ®Google Scholar
• Shimizu , M. , Kita , K. , Fujisawa , H. and Niu , H. 2001 . MRS Symp. Proc. , 655 “Ferroelectric Thin Films IX” CC1.10
   Google Scholar
• Narayan , S. “Characterization of MOCVD-SBT films for 3-dimensional stack capacitors,” . Presented at the 15th International Symposium on Integrated Ferroelectrics .
   Google Scholar
• Park , Y. , Cho , C. R. , Koo , J. M. , Shin , S. , Lee , J. K. , Kim , S. P. , Park , S. H. , Lee , J. H. and Cho , Y. J. “Preparation of PZT films on trench structure for high-density ferroelectric random access memory,” . Presented at the 16th International Symposium on Integrated Ferroelectrics .
   Google Scholar
• Schumacher , M. , Lindner , J. , Baumann , P. K. , Schienle , F. , Solayappan , N. , Joshi , V. , Araujo , C. A. and McMillan , L. D. 2002 . Materials Science in Semiconductor Processing , 5 ( 2–3 ) : 85
   Web of Science ®Google Scholar
• Johnson , J. A. , Lisoni , J. G. and Wouters , D. J. 2003 . Microelec. Engineering , 70 : 377 http://dx.doi.org/10.1016%2FS0167-9317%2803%2900383-6
   Web of Science ®Google Scholar
• Shimamoto , Y. , Kushida-Abdelghafar , K. , Miki , H. and Fujisaki , Y. 1997 . Applied Physics Letters , 70 ( 23 ) : 3096 http://dx.doi.org/10.1063%2F1.119102
   Web of Science ®Google Scholar
• Hartner , W. , Bosk , P. , Schindler , G. , Bachhofer , H. , Mort , M. , Wendt , H. , Mikolajick , T. , Dehm , C. , Schroeder , H. and Waser , R. 2003 . Applied Physics A (Materials Science Processing) , A77 ( 3–4 ) : 571
   Google Scholar
• Jung , D. J. , Jeon , B. G. , Kim , H. H. , Song , Y. J. , Koo , B. J. , Lee , S. Y. , Park , S. O. , Park , Y. W. and Kim , K. IEEE International Electron Devices Meeting 1999 , 279 Technical Digest
   Google Scholar
• Nagano , Y. , Mikawa , T. , Kutsunai , T. , Hayashi , S. , Nasu , T. , Natsume , S. , Tatsunari , T. , Ito , T. , Goto , S. , Yano , H. , Noma , A. , Nagahashi , K. , Miki , T. , Sakagami , M. , Izutsu , Y. , Nakakuma , T. , Hirano , H. , Iwanari , S. , Murakuki , Y. , Yamaoka , K. , Goho , Y. , Judai , Y. , Fujii , E. and Sato , K. 2003 Symposium on VLSI Technology; Digest of Technical Papers , 171
   Google Scholar
• Oh , S. H. , Hong , S. K. , Kim , J. G. , Seong , J. Y. , Park , Y. J. and Leeb , D. W. 2002 . Applied Physics Letters , 81 ( 22 ) : 4230 http://dx.doi.org/10.1063%2F1.1525060
   Web of Science ®Google Scholar
• Jang , N. W. , Song , Y. J. , Kim , H. H. , Joo , H. J. , Park , J. H. , Kang , H. Y. , Lee , S. Y. and Kim , K. 2003 . Integrated Ferroelectrics , 53 : 299 http://dx.doi.org/10.1080%2F10584580390258219
   Web of Science ®Google Scholar
• Lisoni , J. G. , Wafer , K. , Johnson , J. A. , Goux , L. , Schwitters , M. , Paraschiv , V. , Maes , D. , Haspeslagh , L. , Caputa , C. , Zambrano , R. and Wouters , D. J. 2004 . MRS Symp. Proc. 784 “Ferroelectric Thin Films XII” to be published in
   Google Scholar
• Oh , S. H. , Hong , S. K. , Noh , K. H. , Kweon , S. Y. , Kim , N. K. , Yang , Y. H. , Kim , J. G. , Seong , J. Y. , Jang , I. W. , Park , S. H. , Bang , K. H. , Lee , K. N. , Jeong , H. J. , Son , J. H. , Lee , S. S. , Choi , E. S. , Sun , H. J. , Yeom , S. J. , Ban , K. D. , Park , J. W. , Park , G. D. , Song , S. Y. , Shin , J. H. , Lee , S. I. and Park , Y. J. IEEE International Electron Devices Meeting 2003 , 34 ( 5 ) 1 – 4 .
   Google Scholar
• Kim , H. H. , Song , Y. J. , Lee , S. Y. , Joo , H. J. , Jang , N. W. , Jung , D. J. , Park , Y. S. , Park , S. O. , Lee , K. M. , Joo , S. H. , Lee , S. W. , Nam , S. D. and Kim , K. 2002 Symposium on VLSI Technology; Digest of Technical Papers , 210
   Google Scholar