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Integrated Ferroelectrics
An International Journal
Volume 91, 2007 - Issue 1
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Original Articles

A CELL MODEL FOR NON-VOLATILE RANDOM ACCESS MEMORY AND A SUBSEQUENT METHOD FOR INCREASING DENSITY

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Pages 1-9 | Received 31 May 2006, Published online: 20 Sep 2010

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  • Ha , Y. H. Horii , J. H. Jun. 2003 . 2003 Symposium on VLSI technology Jun. , 175 – 176 . 2003 Digest of Technology Papers

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