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Integrated Ferroelectrics

An International Journal

Volume 84, 2006 - Issue 1

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SECTION B: FeRAM MATERIALS: THIN-FILM PROCESSING

PREPARATION OF Pb(Zr_0.35Ti_0.65)O₃ FILMS ON CONDUCTING OXIDE Ga-DOPED ZnO FILMS FOR TRANSPARENT FERROELECTRIC THIN-FILM TRANSISTORS

KWANG BAE LEE Department of Computer & Electronic Physics, Sangji University, Wonju, 220-702, Gangwon-do, Korea

KYUNG HAENG LEE Department of Computer & Electronic Physics, Sangji University, Wonju, 220-702, Gangwon-do, Korea

BYEUNG KWON JU Department of Electrical Engineering, Korea University, Sungbook-goo, 136-701, Seoul, Korea

Pages 159-168 | Received 31 May 2006, Published online: 10 Mar 2011

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https://doi.org/10.1080/10584580601085719

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PREPARATION OF Pb(Zr_0.35Ti_0.65)O₃ FILMS ON CONDUCTING OXIDE Ga-DOPED ZnO FILMS FOR TRANSPARENT FERROELECTRIC THIN-FILM TRANSISTORS

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PREPARATION OF Pb(Zr0.35Ti0.65)O3 FILMS ON CONDUCTING OXIDE Ga-DOPED ZnO FILMS FOR TRANSPARENT FERROELECTRIC THIN-FILM TRANSISTORS

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PREPARATION OF Pb(Zr_0.35Ti_0.65)O₃ FILMS ON CONDUCTING OXIDE Ga-DOPED ZnO FILMS FOR TRANSPARENT FERROELECTRIC THIN-FILM TRANSISTORS