Design and Testing of a 1T-1C Dynamic Random Access Memory Cell Utilizing a Ferroelectric Transistor

Crystal Laws McCartneyDepartment of Electrical and Computer Engineering, The University of Alabama in Huntsville, Alabama, 35899

Cody MitchellDepartment of Electrical and Computer Engineering, The University of Alabama in Huntsville, Alabama, 35899

Mitchell HuntDepartment of Electrical and Computer Engineering, The University of Alabama in Huntsville, Alabama, 35899

Fat D. HoDepartment of Electrical and Computer Engineering, The University of Alabama in Huntsville, Alabama, 35899Correspondence[email protected]

References

C.H. Seager, D. McIntyre, B.A. Tuttle, and J. Evans, “Mechanisms for the Operation of Thin Film Transistors on Ferrolectric”, Integrated Ferroelectrics, vol. 6, pp. 47–68.
Web of Science ®Google Scholar
J. Evans, “NDRO Test Procedure Format”, Radiant Technologies Inc., Technical Report #93G, 1993.
Google Scholar
C.D. Laws, Study of the Ferroelectric Inverter and SRAM Cell, . Master's Thesis, University of Alabama in Huntsville, 2012.
Google Scholar
C. Mitchell, C.L. McCartney, T.C. MacLeod, and F.D. Ho, “Characteristics of a Nonvolatile SRAM Cell Utilizing a Ferroelectric Transistor”, Integrated Ferroelectrics, 132, 82–87 (2012).
Web of Science ®Google Scholar
T. Phillips, T.C. MacLeod, and F.D. Ho, “Modeling of a Ferroelectric Field-Effect Transistor Static Random Access Memory Cell”, Integrated Ferroelectrics, 96, pp.69–74 (2008).
Web of Science ®Google Scholar

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Design and Testing of a 1T-1C Dynamic Random Access Memory Cell Utilizing a Ferroelectric Transistor

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