Advanced search
Publication Cover
Integrated Ferroelectrics
An International Journal
Volume 157, 2014 - Issue 1: Proceedings of International Symposium on Integrated Functionalities (ISIF 2013)
Submit an article Journal homepage
113
Views
3
CrossRef citations to date
0
Altmetric
Original Articles

Resistive Switching and Current Conduction Mechanisms in Amorphous LaLuO3 Thin Films Grown by Pulsed Laser Deposition

Pankaj MisraDepartment of Physics and Institute for Functional Nonmaterials, University of Puerto Rico, San Juan, PR00931, USACorrespondence[email protected]
,
Shojan P. PavunnyDepartment of Physics and Institute for Functional Nonmaterials, University of Puerto Rico, San Juan, PR00931, USA
,
Yogesh SharmaDepartment of Physics and Institute for Functional Nonmaterials, University of Puerto Rico, San Juan, PR00931, USA
&
Ram S. KatiyarDepartment of Physics and Institute for Functional Nonmaterials, University of Puerto Rico, San Juan, PR00931, USA
Pages 47-56 | Received 29 Sep 2013, Accepted 11 Mar 2014, Published online: 16 Jun 2014

References

  • R. Waser, and M. Aono, Nanoionics-based resistive switching memories. Nat. Mater. 6, 833 (2007).
  • G.I. Meijer, Who Wins the Nonvolatile Memory Race. Science. 319, 1625 (2008).
  • K.M. Kim, G.H. Kim, S.J. Song, J.Y. Seok, M.H. Lee, J.H. Yoon, and C.S. Hwang, Electrically configurable electroforming and bipolar resistive switching in Pt/TiO2/Pt structures. Nanotech. 21, 305203 (2010).
  • M.J. Lee, S. Han, S.H. Jeon, B.H. Park, B.S. Kang, S.E. Ahn, K.H. Kim, C.B. Lee, C.J. Kim, I.K. Yoo, D.H. Seo, X.S. Li, J.B. Park, J.H. Lee, and Y. Park, Electrical Manipulation of Nanofilaments in Transition-Metal Oxides for Resistance-Based Memory. Nano Lett. 9, 1476 (2009).
  • C.Y. Lin, C.Y. Wu, C.Y. Wu, C. Hu, and T.Y. Tsenga, Bistable Resistive Switching in Al2O3 Memory Thin Films, J. Electrochem. Soc. 154, 189–192 (2007).
  • S.W. Kang, and S.W. Rhee, Deposition of La2 O 3 Films by Direct Liquid Injection Metallorganic Chemical Vapor Deposition. J. Electrochem. Soc. 149, 345 (2002).
  • S. Ohmi, C. Kobayashi, I. Kashiwagi, C. Ohshima, H. Ishiwara, and H. Iwai, Characterization of La2 O 3 and Yb2 O 3 Thin Films for High-k Gate Insulator Application. J. Electrochem. Soc. 150, 134 (2003).
  • G. Elipe, A.R. Espinos, J.P. Fernandez, and A.G. Munuera, XPS study of the surface carbonation/hydroxylation state of metal oxides. Appl. Surf. Sci. 45, 103–108 (1990).
  • K. Xiong, and J. Robertson, Electronic structure of oxygen vacancies in La2O3, Lu2O3 and LaLuO3.Microelectr. Eng. 86, 1672 (2009).
  • S.C. Chae, J.S. Lee, S. Kim, S.B. Lee, S.H. Chang, C. Liu, B. Kahng, H. Shin, D.W. Kim, C.U. Jung, S. Seo, M.J. Lee, and T.W. Noh, Random Circuit Breaker Network Model for Unipolar Resistance Switching. Adv. Mater. 20, 1154 (2008).
  • K. Jung, H. Seo, Y. Kim, H. Im, J. Hong, J.W. Park, and J.K. Lee, Temperature dependence of high- and low-resistance bistable states in polycrystalline NiO films. Appl. Phys. Lett. 90, 052104 (2007).
  • K. Li, Y. Xia, B. Xu, X. Gao, H. Guo, Z. Liu, and J. Yin, Conduction behavior change in amorphous LaLuO3 dielectrics based on correlated barrier hopping theory. Appl. Phys. Lett. 96, 182904 (2010).
  • V. Kannan, V. Senthilkumar, and J.K. Rhee, Multi-level conduction in NiO resistive memory device prepared by solution route. J. Phys. D: Appl. Phys. 46, 095301 (2013).
  • P. Misra, S.P. Pavunny, and R.S. Katiyar, On the Resistive Switching and Current Conduction Mechanisms of Amorphous LaGdO3 Films Grown by Pulsed Laser Deposition. ECS Trans. 3, 229 (2013).
  • G.A. Niklasson, and A. Brantervik, Analysis of current-voltage characteristics of metal-insulator composite films. J. Appl. Phys. 59, 980 (1986).
  • G.E. Pike, ac Conductivity of Scandium Oxide and a New Hopping Model for Conductivity.Phys. Rev. B. 6, 1572 (1972).

Reprints and Corporate Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

To request a reprint or corporate permissions for this article, please click on the relevant link below:

Order Reprints Request Corporate Permissions

Academic Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

Obtain permissions instantly via Rightslink by clicking on the button below:

Request Academic Permissions

If you are unable to obtain permissions via Rightslink, please complete and submit this Permissions form. For more information, please visit our Permissions help page.

Related research

People also read lists articles that other readers of this article have read.

Recommended articles lists articles that we recommend and is powered by our AI driven recommendation engine.

Cited by lists all citing articles based on Crossref citations.
Articles with the Crossref icon will open in a new tab.