References
- H. Zheng, J. Wang, S.E. Lofland, Z. Ma, L. Mohaddes-Ardabili, T. Zhao, L. Salamanca-Riba, S.R. Shinde, S.B. Ogale, F. Bai, D. Viehland, Y. Jia, D.G. Schlom, M. Wuttig, A. Roytbur, and R. Ramesh, Science 303, 661 (2004).
- Y.-H. Chu, L.W. Martin, M.B. Holcomb, M. Gajek, S.-J. Han, Q. He, N. Balke, C.-H. Yang, D. Lee, W. Hu, Q. Zhan, P.-.L. Yang, A. Franile-Rodriguez, A. School, S.X. Wang, and A. Ramesh, Nature Materials, 7, 478 (2008).
- H. Aurivillius, ArkivF. Kemi 1, 463 (1949).
- E.C. Subbarao, J. Phys. Chem. Solids 23, 665 (1962).
- T. Kojima, T. Sakai, T. Watanabe, H. Funakubo, K. Saito, and M. Osada, Appl. Phys. lett. 89, 2746 (2002).
- U. Chon, H.M. Jang, M.G. Kim, and C.H. Chang, Phys. Rev. Lett. 89, 087601–1 (2002).
- M.S. Tomar, R.E. Melgarejo, A. Hidalgo, S.B. Majumder, and R.S. Katiyar, Appl. Phys. Lett. 83, 341 (2003).
- M.S. Tomar, R.E. Melgarejo, and S.P. Singh, Microelectronics Journal 36, 574 (2005).
- A. Charris-Hernandez, R. Megarejo, D. Barrionuevo, A. Kumar, and M.S. Tomar, J. Appl. Phys. 114, 034108 (2013).