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Integrated Ferroelectrics
An International Journal
Volume 201, 2019 - Issue 1
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Articles

Effects of Area Ratio on the Characteristics of Metal-Ferroelectric-Metal-Insulator-Semiconductor Field-Effect-Transistors (MFMIS FETs)

Jing SunSchool of Electrical and Information, Hunan Institute of Engineering, Xiangtan, Hunan, China; Correspondence[email protected]
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,
Yanping LiSchool of Electrical and Information, Hunan Institute of Engineering, Xiangtan, Hunan, China; View further author information
,
Lei CaoSchool of Electrical and Information, Hunan Institute of Engineering, Xiangtan, Hunan, China; View further author information
,
Jiaoyun LiuCollege of Information Engineering, Hunan Golf and Tourism College, Changde, Hunan, ChinaView further author information
,
Xiaorong ShiSchool of Electrical and Information, Hunan Institute of Engineering, Xiangtan, Hunan, China; View further author information
&
Li TianSchool of Electrical and Information, Hunan Institute of Engineering, Xiangtan, Hunan, China; View further author information
Pages 183-191 | Received 02 Apr 2019, Accepted 06 Sep 2019, Published online: 10 Dec 2019

References

  • J. F. Scott, Application of modern ferroelectric. Science. 315 (5814), 954 (2007). DOI: 10.1126/science.1129564.
  • S. T. Han, Y. Zhou, and V. A. L. Roy, Towards the development of flexible non-volatile memories. Adv. Mater. Weinheim. 25 (38), 5425 (2013). DOI: 10.1002/adma.201301361.
  • J. Sun and X. J. Zheng, Modeling of MFIS-FETs for application of ferroelectric random access memory. IEEE Trans. Electron Devices 58 (10), 3559 (2011). DOI: 10.1109/TED.2011.2162335.
  • G. Pahwa et al., Physical insights on negative capacitance transistors in nonhysteresis and hysteresis regimes: MFMIS versus MFIS structures. IEEE Trans. Electron Devices 65 (3), 867 (2018). DOI: 10.1109/TED.2018.2794499.
  • L. Tu et al., Ferroelectric negative capacitance field effect transistor. Adv. Electron. Mater. 4, 1800231 (2018). DOI: 10.1002/aelm.201800231.
  • S. L. Miller and P. J. McWhorter, Physics of the ferroelectric nonvolatile memory field effect transistor. J. Appl. Phys. 72 (12), 5999 (1992). DOI: 10.1063/1.351910.
  • H. T. Lue, C. J. Wu, and T. Y. Tseng, Device modeling of ferroelectric memory field-effect transistor (FeMFET). IEEE Trans. Electron Devices 49, 1790 (2002).
  • H. T. Lue, C. J. Wu, and T. Y. Tseng, Device modeling of ferroelectric memory field-effect transistor for the application of ferroelectric random access memory. IEEE Trans. Ultrason. Ferroelectr. Freq. Control. 50 (1), 5 (2003).
  • C. Jiang et al., Analytical drain current model for long-channel gate-all-around negative capacitance transistors with a metal-ferroelectric-insulator-semiconductor structure. Jpn. J. Appl. Phys. 55 (2), 024201 (2016). DOI: 10.7567/JJAP.55.024201.
  • C. Jiang et al., A carrier-based analytical theory for negative capacitance symmetric double-gate field effect transistors and its simulation verification. J. Phys. D Appl. Phys. 48 (36), 365103 (2015). DOI: 10.1088/0022-3727/48/36/365103.
  • E. Tokumitsu, K. Okamoto, and H. Ishiwara, Low voltage operation of nonvolatile metal-ferroelectric-metal-insulator-semiconductor (MFMIS)-field-effect-transistor (FETs) using Pt/SrBi2Ta2O9/Pt/SrTa2O6/SiON/Si structures. Jpn. J. Appl. Phys. 40 (Part 1, No. 4B), 2917 (2001). DOI: 10.1143/JJAP.40.2917.
  • A. Chung et al., Nanoscale memory devices. Nanotechnology. 21 (41), 412001 (2010). DOI: 10.1088/0957-4484/21/41/412001.
  • Y. Li, Y. Lian, and G. S. Samudra, Quantitative analysis and prediction of experimental observations on quasi-static hysteretic metal-ferroelectric-metal-insulator-semiconductor FET and its dynamic behaviour based on Landau theory. Semicond. Sci. Technol. 30 (4), 045011 (2015). DOI: 10.1088/0268-1242/30/4/045011.
  • Z. Ye et al., Simulation of polarization and butterfly hysteresis loops in bismuth layer-structured ferroelectric thin films. J. Appl. Phys. 100 (9), 094101 (2006). DOI: 10.1063/1.2363251.
  • X. J. Zheng et al., Evaluation of capacitance-voltage characteristic and memory window of metal-ferroelectric-insulator-silicon capacitors. Appl. Phys. Lett. 93 (21), 213501 (2008). DOI: 10.1063/1.3021015.
  • S. M. Sze and K. K. Ng, Physics of Semiconductor Devices (John Wiley & Sons, ‎Hoboken, NJ, 2007).
  • Y. Taur and T. H. Ning, Fundamentals of Modern VLSI Devices (Cambridge University Press, Cambridge, UK, 1998).

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