References
- U. Böttger et al., Dopants in Chemical Solution-Deposited HfO2 Films, Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices (Woodhead Publishing, 2019), p. 127. DOI: https://doi.org/10.1016/b978-0-08-102430-0.00010-3.
- S. K. Gupta et al., On comparison of luminescence properties of La2Zr2O7 and La2Hf2O7 nanoparticles, J. Am. Ceram. Soc. 103 (1), 235 (2020). DOI: https://doi.org/10.1111/jace.16693.
- T. Smirnova et al., Phase composition of nanosized oxide film structures based on lanthanum and scandium doped HfO2, J. Struct. Chem. 58 (8), 1573 (2017). DOI: https://doi.org/10.1134/S0022476617080145.
- P. Lee et al., Two-step interfacial reaction of HfO2 high-k gate dielectric thin films on Si, Ceram. Int. 30 (7), 1267 (2004). DOI: https://doi.org/10.1016/j.ceramint.2003.12.048.
- J. He et al., Microstructure and interfaces of HfO2 thin films grown on silicon substrates, J. Cryst. Growth 262 (1-4), 295 (2004). DOI: https://doi.org/10.1016/j.jcrysgro.2003.10.026.
- L. Wang et al., Effects of hot-isostatic pressing and annealing post-treatment on HfO2 and Ta2O5 films prepared by ion beam sputtering, Optik 142, 33 (2017). DOI: https://doi.org/10.1016/j.ijleo.2017.05.047.
- G. He et al., The structural and interfacial properties of HfO2/Si by the plasma oxidation of sputtered metallic Hf thin films, J. Cryst. Growth 268 (1-2), 155 (2004). DOI: https://doi.org/10.1016/j.jcrysgro.2004.05.038.
- Y. Yuan et al., Ultra-high mobility transparent organic thin film transistors grown by an off-centre spin-coating method, Nat. Commun. 5, 3005 (2014). DOI: https://doi.org/10.1038/ncomms4005.
- S. Sivakumar, F. C. van Veggel, and M. Raudsepp , Sensitized Emission from lanthanide-doped nanoparticles embedded in a semiconductor sol–gel thin film, Chemphyschem 8 (11), 1677 (2007). DOI: https://doi.org/10.1002/cphc.200700283.
- K. Suzuki, and K. Kato, Characterization of high-k HfO2 films prepared using chemically modified alkoxy-derived solutions, J. Appl. Phys. 105 (6), 061631 (2009). DOI: https://doi.org/10.1063/1.3055340.
- M. G. Blanchin et al., Structure and dielectric properties of HfO2 films prepared by a sol-gel route, J. Sol-Gel Sci. Technol. 47 (2), 165 (2008). DOI: https://doi.org/10.1007/s10971-008-1758-4.
- M. Zaharescu et al., Correlation between the method of preparation and the properties of the sol-gel HfO2 thin films, J. Non-Cryst. Solids 354 (2-9), 409 (2008). DOI: https://doi.org/10.1016/j.jnoncrysol.2007.07.097.
- K. Tetzner, K. A. Schroder, and K. Bock, Photonic curing of sol-gel derived HfO2 dielectrics for organic field-effect transistors, Ceram. Int. 40 (10), 15753 (2014). DOI: https://doi.org/10.1016/j.ceramint.2014.07.099.
- H. Shimizu et al., Material microcharacterization of sol-gel derived HfO2 thin films on silicon wafers, Jpn. J. Appl. Phys. 43 (10), 6992 (2004). DOI: https://doi.org/10.1143/JJAP.43.6992.
- M. Niederberger, Nonaqueous sol-gel routes to metal oxide nanoparticles, Acc. Chem. Res. 40 (9), 793 (2007). DOI: https://doi.org/10.1021/ar600035e.
- M. Pešić et al., Physical mechanisms behind the field‐cycling behavior of HfO2‐based ferroelectric capacitors, Adv. Funct. Mater. 26 (25), 4601 (2016). DOI: https://doi.org/10.1002/adfm.201600590.
- J. Müller et al., Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories, IEEE International Electron Devices Meeting, 2013, IEEE, 2013, pp. 10.18.1-10.18.4. DOI: https://doi.org/10.1109/IEDM.2013.6724605.
- M. Kozodaev et al., Ferroelectric properties of lightly doped La: HfO2 thin films grown by plasma-assisted atomic layer deposition, Appl. Phys. Lett. 111 (13), 132903 (2017). DOI: https://doi.org/10.1063/1.4999291.
- U. Schroeder et al., Lanthanum-doped hafnium oxide: A robust ferroelectric material, Inorg. Chem. 57 (5), 2752 (2018). DOI: https://doi.org/10.1021/acs.inorgchem.7b03149.
- T. V. Perevalov et al., Structure of Hf0.9La0.1O2 Ferroelectric Films Obtained by the Atomic Layer Deposition, Jetp Lett. 109 (2), 116 (2019). DOI: https://doi.org/10.1134/S0021364019020115.
- R. Materlik et al., La-doping effects favoring intrinsic and field induced ferroelectricity in HfO2: A first principles study, J. Appl. Phys. 123 (16), 164101 (2018)., and DOI: https://doi.org/10.1063/1.5021746.
- C. J. Brinker, and G. W. Scherer, Sol-Gel Science: The Physics and Chemistry of Sol-Gel Processing (Academic Press, Inc., San Diego, 1990), pp. 21–58.
- I. U. Arachchige, and S. L. Brock, Sol-gel methods for the assembly of metal chalcogenide quantum dots, Acc. Chem. Res. 40 (9), 801 (2007). DOI: https://doi.org/10.1021/ar600028s.
- S. Sakka, and H. Kozuka, Handbook of Sol-Gel Science and Technology. 1. Sol-gel Processing (Kluwer Academic Publishers, Boston, 2005), Vol. 1, pp. 3–55.
- M. S. Rao et al., Sol-gel derived low temperature HfO2-GPTMS hybrid gate dielectric for a IGZO thin-film transistors (TFTs), Ceram. Int. 44 (14), 16428 (2018). DOI: https://doi.org/10.1016/j.ceramint.2018.06.056.
- A. Bahari, and A. Ramzannejad, Nanostructural properties of La2O3/HfO2 gate dielectrics, Int. J. Mod. Phys. B. 26 (14), 1250080 (2012). DOI: https://doi.org/10.1142/S0217979212500804.
- M. Hart, High precision lattice parameter measurements by multiple Bragg reflexion diffractometry, Proc. Royal Soc. London. A. Math. Phys. Sci. 309, 281 (296). (1969). DOI: https://doi.org/10.1098/rspa.1969.0042.
- R. P. Haggerty et al., Thermal expansion of HfO2 and ZrO2, J. Am. Ceram. Soc. 97 (7), 2213 (2014). DOI: https://doi.org/10.1111/jace.12975.
- R. Terki et al., Cubic-to-tetragonal phase transition of HfO2 from computational study, Mater. Lett. 62 (10-11), 1484 (2008). DOI: https://doi.org/10.1016/j.matlet.2007.09.006.
- A. Toriumi et al., Doped HfO2 for higher-k dielectrics, ECS Trans. 1 (5), 185 (2006). DOI: https://doi.org/10.1149/1.2209268.