References
- A. Sasaki et al., Dielectric and piezoelectric properties of (Bi0.5Na0.5)TiO3–(Bi0.5K0.5)TiO3 systems, Jpn. J. Appl. Phys. 38 (Part 1, No. 9B), 5564 (1999). DOI: https://doi.org/10.1143/JJAP.38.5564.
- F. Guo et al., Enhanced pyroelectric properties in (1-x)(Bi0.5Na0.5)TiO3-xBa(Zr0.055Ti0.945)O3 role of morphotropic phase boundary and ferroelectric-antiferroelectric phase transition, Appl. Phys. Lett. 103 (18), 182906 (2013). DOI: https://doi.org/10.1063/1.4828675.
- J. Y. Han, and C. W. Bark, Influence of calcination temperature on the structure and optical properties of Bi3.25La0.75Ti3O12 powders, J. Korean. Phys. Soc. 65 (2), 216 (2014). DOI: https://doi.org/10.3938/jkps.65.216.
- J. Liu et al., Dielectric, piezoelectric, and ferroelectric properties of grain-orientated Bi3.25La0.75Ti3O12 ceramics, J. Appl. Phys. 102 (10), 104107 (2007)., DOI: https://doi.org/10.1063/1.2812697.
- B. H. Park et al., Lanthanum-substituted bismuth titanate for use in non-volatile memories, Nature. 401 (6754), 682 (1999). DOI: https://doi.org/10.1038/44352.
- M. de Keijser, and G. J. M. Dormans, Chemical vapor deposition of electroceramic thin films, MRS Bull. 21 (6), 37 (1996). DOI: https://doi.org/10.1557/S0883769400046066.
- T. Watanabe et al., Site definition and characterization of La-substituted Bi4Ti3O12 thin films prepared by metalorganic chemical vapor deposition, J. Appl. Phys. 90 (12), 6533 (2001)., DOI: https://doi.org/10.1063/1.1417988.
- C. A. Paz de Araujo et al., Fatigue-free ferroelectric capacitors with platinum electrodes, Nature. 374 (6523), 627 (1995). DOI: https://doi.org/10.1038/374627a0. [CrossRef] [https://doi.org/10.1038/374627a0]
- F. Si et al., Nb-doped 0.8BaTiO3-0.2Bi(Mg0.5Ti0.5)O3 ceramics with stable dielectric properties at high temperature, Crystals. 7 (6), 168 (2017). DOI: https://doi.org/10.3390/cryst7060168.
- P. K. Patel et al., Enhanced dielectric properties of doped barium titanate ceramics, J. Phys. Chem. Solids. 74 (4), 545 (2013). DOI: https://doi.org/10.1016/j.jpcs.2012.11.017.
- P. Siriprapa, A. Watcharapasorn, and S. Jiansirisomboon, Structure-property relations of co-doped bismuth layer-structured Bi3.25La0.75(Ti1-xMox)3O12 ceramics, Nanoscale Res. Lett. 7, 42 (2012). DOI: https://doi.org/10.1186/1556-276X-7-42.
- J. H. Park et al., Effect of Nb doping of ferroelectric properties of Bi3.25La0.75Ti3O12 ceramics, J. Appl. Phys. 97 (6), 064110 (2005). DOI: https://doi.org/10.1063/1.1862318.
- J. Li et al., The thickness effect of Bi3.25La0.75Ti3O12 buffer layer in PbZr0.58Ti0.42O3/Bi3.25La0.75Ti3O12 (PZT/BLT) multilayered ferroelectric thin films, Thin Solid Films. 519 (18), 6021 (2011). DOI: https://doi.org/10.1016/j.tsf.2011.04.006.
- H. Xinyou et al., Influence of composition on properties of BNT-BT lead-free piezoceramics, J. Rare. Earths. 24 (1), 321 (2006). DOI: https://doi.org/10.1016/S1002-0721(07)60391-3.
- J. Li et al., Large strain response in acceptor- and donor-doped Bi0.5Na0.5TiO3-based lead-free ceramics, J. Mater. Sci. 46 (17), 5702 (2011). DOI: https://doi.org/10.1007/s10853-011-5523-7.
- N. Thongmee, A. Wacharapasorn, and S. Jiansirisomboon, Dielectric properties of complex structured (1-x)Pb(Zr0.52Ti0.48)O3-x(Bi3.25La0.75)Ti3O12 ceramics, Ferroelectrics. 384 (1), 10 (2009). DOI: https://doi.org/10.1080/00150190902889473.
- R. Sumang et al., Investigation of a new lead-free (1-x-y)BNT-xBKT-yBZT piezoelectric ceramics, Ceram. Inter. 43, 102 (2017). DOI: https://doi.org/10.1016/j.ceramint.2017.05.239.
- J. Y. Han, and C. W. Bark, Tunable band gap of iron-doped lanthanum-modified bismuth titanate synthesized by using the thermal decomposition of a secondary phase, J. Korean. Phys. Soc. 66 (9), 1371 (2015). DOI: https://doi.org/10.3938/jkps.66.1371.
- Y. Tan et al., Unfolding grain size effects in barium titanate ferroelectric ceramics, Sci. Rep. 5, 9953 (2015). DOI: https://doi.org/10.1038/srep09953.
- M. Ausloos, Dielectric response of composite materials, J. Phys. C: Solid State Phys. 18 (36), L1163 (1985). DOI: https://doi.org/10.1088/0022-3719/18/36/009.
- Y. Wu et al., Processing and properties of strontium bismuth vanadate niobate ferroelectric ceramics, J. Am. Ceram. Soc. 84 (12), 2882 (2001). DOI: https://doi.org/10.1111/j.1151-2916.2001.tb01109.x.
- I. Coondoo, A. K. Jha, and S. K. Agarwal, Structural, dielectric and electrical studies in tungsten doped SrBi2Ta2O9 ferroelectric ceramics, Ceram. Int. 33 (1), 41 (2007). DOI: https://doi.org/10.1016/j.ceramint.2005.07.013.
- I. Coondoo, A. K. Jha, and S. K. Agarwal, Enhancement of dielectrics in donor doped Aurivillius SrBi2Ta2O9 ferroelectric ceramics, J. Eur. Ceram. Soc. 27 (1), 253 (2007). DOI: https://doi.org/10.1016/j.jeurceramsoc.2006.04.167.
- A. Fouskova, and L. E. Cross, Dielectric properties of bismuth titanate, J. Appl. Phys. 41 (7), 2834 (1970). DOI: https://doi.org/10.1063/1.1659324.
- M. Villegas et al., Electrical properties of bismuth titanate based ceramics with secondary phases, J. Electroceram. 13 (1–3), 543 (2004). DOI: https://doi.org/10.1007/s10832-004-5155-2.
- H. S. Shulman et al., Microstructure, electrical conductivity and piezoelectric properties of bismuth titanate, J. Am. Ceram. Soc. 79 (12), 3124 (1996). DOI: https://doi.org/10.1111/j.1151-2916.1996.tb08086.x.
- J. H. Le1 et al., Suppression of dielectric loss at high temperature in (Bi1/2Na1/2)TiO3 ceramic by controlling a-site cation deficiency and heat treatment, J. Sen. Sci. Tech. 29, 1 (2020). DOI: https://doi.org/10.5369/JSST.2019.29.1.7.
- K. S. Rao et al., Effect of Ba2+ in BNT ceramics on dielectric and conductivity properties, NS. 02 (04), 357 (2010). DOI: https://doi.org/10.4236/ns.2010.24043.
- G. H. Haertling, and W. J. Zimmer, Analysis of hot-pressing parameters for lead zirconate-lead titanate ceramics containing two atom percent bismuth, Am. Ceram. Soc. Bull. 45, 1084 (1966).
- M. E. Lines, and A. M. Glass, Principles and Applications of Ferroelectrics and Related Materials, Oxford: Clarendon Press, 1977
- S. Sharma et al., Synthesis, structural and electrical properties of La modified PZT system, Compos. Mater. Sci. 37 (1–2), 86 (2006). DOI: https://doi.org/10.1016/j.commatsci.2005.12.009.