References
- K. Jefimovs et al., Zone-doubling technique to produce ultrahigh-resolution x-ray optics, Phys. Rev. Lett. 99 (26), 264801 (2007). DOI: https://doi.org/10.1103/PhysRevLett.99.264801.
- D. Lencer et al., A map for phase-change materials, Nat. Mater. 7 (12), 972 (2008). DOI: https://doi.org/10.1038/nmat2330.
- T. M. Mayer et al., Atomic-layer deposition of wear-resistant coatings for microelectromechanical devices, Appl. Phys. Lett. 82 (17), 2883 (2003). DOI: https://doi.org/10.1063/1.1570926.
- C. Y. Ngo et al., Investigation of semiconductor quantum dots for waveguide electroabsorption modulator, Nanoscale Res. Lett. 3 (12), 486 (2008). DOI: https://doi.org/10.1007/s11671-008-9184-7.
- P. H. L. Notten et al., 3‐D integrated all‐solid‐state rechargeable batteries, Adv. Mater. 19 (24), 4564 (2007). DOI: https://doi.org/10.1002/adma.200702398.
- F. Lee et al., Atomic layer deposition: An enabling technology for microelectronic device manufacturing, in 2007 IEEE/SEMI Advanced Semiconductor Manufacturing Conference, Stresa, Italy (2007), pp. 359–365. DOI: https://doi.org/10.1109/ASMC.2007.375064.
- J. J. Wang et al., Filling high aspect-ratio nano-structures by atomic layer deposition and its applications in nano-optic devices and integrations, J. Vac. Sci. Technol. B 23 (6), 3209 (2005). DOI: https://doi.org/10.1116/1.2132326.
- R. J. Puurunen, Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process, Appl. Phys. 97 (12), 121301 (2005). 1-52 DOI: https://doi.org/10.1063/1.1940727.
- J. H. Han et al., A quantum chemical study of ZrO2 atomic layer deposition growth reactions on the SiO2 surface, Surf. Sci. 550 (1–3), 199 (2004). DOI: https://doi.org/10.1016/j.susc.2003.12.030.
- M. D. Groner et al., Electrical characterization of thin Al2O3 films grown by atomic layer deposition on silicon and various metal substrates, Thin Solid Films 413 (1–2), 186 (2002). DOI: https://doi.org/10.1016/S0040-6090(02)00438-8.
- X. Chen, and A. Selloni, Introduction: Titanium dioxide (TiO2) nanomaterials, Chem. Rev. 114 (19), 9281− (2014). DOI: https://doi.org/10.1021/cr500422r.
- M. R. Hoffmann et al., Environmental applications of semiconductor photocatalysis, Chem. Rev. 95 (1), 69 (1995). DOI: https://doi.org/10.1021/cr00033a004.
- A. L. Linsebigler et al., Photocatalysis on TiO2 surfaces: Principles, mechanisms, and selected results, Chem. Rev. 95 (3), 735 (1995). DOI: https://doi.org/10.1021/cr00035a013.
- A. Mills, R. H. Davies, and D. Worsley, Water purification by semiconductor photocatalysis, Chem. Soc. Rev. 22 (6), 417 (1993). DOI: https://doi.org/10.1039/cs9932200417.
- J. Lewis, Material challenge for flexible organic devices, Mater. Today 9 (4), 38 (2006). DOI: https://doi.org/10.1016/S1369-7021(06)71446-8.
- Q. Xie et al., Atomic layer deposition of TiO2 from tetrakis-dimethyl-amido titanium or Ti isopropoxide precursors and H2O, J. Appl. Phys. 102 (8), 083521 (2007). DOI: https://doi.org/10.1063/1.2798384.
- K. Kanomata et al., Infrared study on room-temperature atomic layer deposition of TiO2 using tetrakis (dimethylamino) titanium and remote-plasma-excited water vapour, Appl. Surf. Sci. 308, 328 (2014). DOI: https://doi.org/10.1016/j.apsusc.2014.04.166.
- A. R. Head et al., Near ambient pressure x-ray photoelectron spectroscopy study of the atomic layer deposition of TiO2 on RuO2 (110), J. Phys. Chem. C 120 (1), 243 (2016). DOI: https://doi.org/10.1021/acs.jpcc.5b08699.
- A. Bishal, C. Sukotjo, and C. Takoudis, Room temperature TiO2 atomic layer deposition on collagen membrane from a titanium alkylamide precursor, J. Vac. Sci. Technol. A 35 (1), 01B134 (2017). DOI: https://doi.org/10.1116/1.4972245.
- G. Zhou, J. Ren, and S. Zhang, Initial surface reactions mechanisms of atomic layer deposition TiO2 Using Ti(OCH3)4 and H2O as precursors, Adv. Mater. Res. 785–786, 832 (2013). DOI: https://doi.org/10.4028/www.scientific.net/AMR.785-786.832.
- J. Ren et al., Initial reaction of HfO2 atomic layer deposition on silicon surfaces with different oxygen levels: A density functional theory study, Thin Solid Films 515 (11), 4702 (2007). DOI: https://doi.org/10.1016/j.tsf.2006.11.045.
- U. Terranova, and D. R. Bowler, Effect of hydration of the TiO2 anatase (101) substrate on the atomic layer deposition of alumina films, J. Mater. Chem. 21 (12), 4197 (2011). DOI: https://doi.org/10.1039/c0jm04095a.
- Z. Hu, and C. H. Turner, Initial surface reactions of TiO2 atomic layer deposition onto SiO2 surfaces: density functional theory calculations, J. Phys. Chem. B 110 (16), 8337 (2006). DOI: https://doi.org/10.1021/jp060367b.
- R. Jie et al., Surface reaction mechanism of Y2O3 atomic layer deposition on the hydroxylated Si(100)-2 × 1: A density functional theory study, Appl. Surf. Sci. 255, 7136 (2009). DOI: https://doi.org/10.1016/j.apsusc.2009.03.044.
- Z. Guangfen, R. Jie, and Z. Shaowen, Initial growth mechanism of atomic layer deposited hafnium dioxide using cyclopentadienyl-type precursor: A density functional theory study, Thin Solid Films 524, 179 (2012). DOI: https://doi.org/10.1016/j.tsf.2012.09.046.
- Z. Guangfen, R. Jie, and Z. shaowen, Initial growth mechanisms of ZrO2 and TiO2thin films using cycloheptatrienyl–cyclopentadienyl heteroleptic precursors: A comparative study by density functional theory, Appl. Surf. Sci. 283, 968 (2013). DOI: https://doi.org/10.1016/j.apsusc.2013.07.054.
- F. Juan Carlos, and V. Teplyakov, Chemistry of organometallic compounds on silicon: The first step in film growth, Chem. Eur. J. 13, 9164 (2007). DOI: https://doi.org/10.1002/chem.200700856.
- F. Juan Carlos, and V. Teplyakov, Chemistry of diffusion barrier film formation: adsorption and dissociation of tetrakis (dimethylamino) titanium on Si(100)-2 × 1, J. Phys. Chem. C 111 (12), 4800 (2007). DOI: https://doi.org/10.1021/jp067929b.
- F. Juan Carlos, and V. Teplyakov, Surface transamination reaction for tetrakis (dimethylamido) titanium with NHX-terminated Si(100) surfaces, J. Phys. Chem. C 111, 16498 (2007). DOI: https://doi.org/10.1021/jp074656r.
- F. Juan Carlos, and V. Teplyakov, Chemisorption of tetrakis (dimethylamido) titanium on Si(100)-2 × 1: C − H and C − N bond reactivity leading to low-temperature decomposition pathways, J. Phys. Chem. C 112 (26), 9695 (2008). DOI: https://doi.org/10.1021/jp800436w.
- D. Yichen, L. Jia-Ming, and V. Teplyakov, Computational investigation of electronic and steric effects in surface reactions of metalorganic precursors on functionalized silicon surfaces, J. Phys. Chem. C 119 (24), 13670− (2015). DOI: https://doi.org/10.1021/acs.jpcc.5b02722.
- A. D. Becke , Density-functional exchange-energy approximation with correct asymptotic behavior, Phys. Rev. A Gen. Phys. 38 (6), 3098 (1988). DOI: https://doi.org/10.1103/PhysRevA.38.3098.
- A. D. Becke, Density‐functional thermochemistry. III. The role of exact exchange, A. Phys. Rev. A 98 (7), 5648 (1993). DOI: https://doi.org/10.1063/1.464913.
- C. Lee, W. Yang, and R. Parr, Development of the Colle-Salvetti correlation-energy formula into a functional of the electron density, Phys. Rev. B Condens. Matter. 37 (2), 785 (1988). DOI: https://doi.org/10.1103/PhysRevB.37.785.
- P. C. Hariharan, and J. A. Pople, The influence of polarization functions on molecular orbital hydrogenation energies, Theoret. Chim. Acta 28 (3), 213 (1973). DOI: https://doi.org/10.1007/BF00533485.
- M. J. Frisch, Gaussian 09, Revision B. 01 (Gaussian, Inc., Wallingford, 2009).
- C. Gonzalez, and H. Schlegel, An improved algorithm for reaction path following, Chem. Phys. 90 (4), 2154 (1989). DOI: https://doi.org/10.1063/1.456010.
- M. F. Lappert et al., A Review of: “Metal and Metalloid Amides, Metal and Metalloid Amides (Ellis Horwood Ltd., Chichester/England, 1980). DOI: https://doi.org/10.1080/00945718008071328.
- S. Kaushik et al., Towards a comprehensive understanding of the chemical vapor deposition of titanium nitride using Ti(NMe2)4: A density functional theory approach, Dalton Trans. 43, 8877 (2014). DOI: https://doi.org/10.1039/C4DT00690A.
- G. Triani et al., Nanostructured TiO2 membranes by atomic layer deposition, J. Mater. Chem. 16 (14), 1355 (2006). DOI: https://doi.org/10.1039/b516499k.
- H. E. Cheng, and C. C. Chen, Morphological and photoelectrochemical properties of ALD TiO2 films, J. Electrochem. Soc. 155 (9), D604 (2008). DOI: https://doi.org/10.1149/1.2952659.
- Y. Huang, G. Pandraud, and P. Sarro, Characterization of low temperature deposited atomic layer deposition TiO2 for MEMS applications, J. Vac. Sci. Techol. A 31 (1), 01A148 (2013). DOI: https://doi.org/10.1116/1.4772664.
- Z. Lin et al., Development of inverted organic solar cells with TiO2 interface layer by using low-temperature atomic layer deposition, ACS Appl. Mater. Interfaces 5 (3), 713− (2013). DOI: https://doi.org/10.1021/am302252p.
- S. Porro et al., Low-temperature atomic layer deposition of TiO2 thin layers for the processing of memristive devices, J. Vac. Sci. Technol. A 34 (1), 01A147 (2016). DOI: https://doi.org/10.1116/1.4938465.
- Z. Serge et al., Wafer-scale fabrication of conformal atomic-layered TiO2 by atomic layer deposition using tetrakis (dimethylamino) titanium and H2O precursors, Mater. Des. 120, 99 (2017). DOI: https://doi.org/10.1016/j.matdes.2017.02.016.