256Kb Ferroelectric nonvolatile memory technology for 1T/1C cell with 100ns read/write time at 3V

Tatsumi Sumi Matsushita Electronics Corporation, Takatsuki Osaka, Japan

Nobuyuki Moriwaki Matsushita Electronics Corporation, Takatsuki Osaka, Japan

George Nakane Matsushita Electronics Corporation, Takatsuki Osaka, Japan

Tetsuji Nakakuma Matsushita Electronics Corporation, Takatsuki Osaka, Japan

Yuji Judai Matsushita Electronics Corporation, Takatsuki Osaka, Japan

Yasuhiro Uemoto Matsushita Electronics Corporation, Takatsuki Osaka, Japan

Yoshihisa Nagano Matsushita Electronics Corporation, Takatsuki Osaka, Japan

Shinichiro Hayashi Matsushita Electronics Corporation, Takatsuki Osaka, Japan

Masamichi Azuma Matsushita Electronics Corporation, Takatsuki Osaka, Japan

Tatsuo Otsuki Matsushita Electronics Corporation, Takatsuki Osaka, Japan

Gota Kano Matsushita Electronics Corporation, Takatsuki Osaka, Japan

Joseph D. Cuchiaro Symetrix Corporation, Colorado Springs, Colorado, USA

Michafl C. Scott Symetrix Corporation, Colorado Springs, Colorado, USA

Larry D. McMillan Symetrix Corporation, Colorado Springs, Colorado, USA

Carlos A. Paz de Araujo University of Colorado at Colorado Springs and Symetrix Corporation

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References

Sumi , T. 1994 . ISSCC Digest of Technical Papers . Feb. : 268 – 269 .
Google Scholar
Evans , J. T. 1988 . IEEE Journal of Solid State Circuits , 23 ( 5 ) Oct. : 1171 – 1175 .
Web of Science ®Google Scholar
Womach , R. 1989 . ISSCC Digest of Technical Papers , Feb. : 242 – 243 .
Google Scholar
Eaton , S. S. 1988 . ISSCC Digest of Technical Papers , Feb. : 130 – 131 .
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256Kb Ferroelectric nonvolatile memory technology for 1T/1C cell with 100ns read/write time at 3V

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256Kb Ferroelectric nonvolatile memory technology for 1T/1C cell with 100ns read/write time at 3V

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