Grain boundary states in germanium

References

• Abrahams , E. , Anderson , P. W. and Ramakrishnan , T. V. 1980 . Phys. Rev. Lett. , 42 : 672
   Google Scholar
• Altshuler , B. L. , Aronov , A. G. and Lee , P. A. 1980 . Phys. Rev. Lett. , 44 : 1288
   Web of Science ®Google Scholar
• Labusch , R. and Hess , J. 1988 . Point and Extended Defects in Semiconductors , Edited by: Benedek , G. , Cavallini , A. and Schröter , W. Vol. 202 , 15 NATO . ASI Series B. Phys
   Google Scholar
• Labusch , R. and Thümmell , H. 1986 . Proceedings of the Fifth International Symposium on Structure and Properties of Dislocations in Semiconductors , 798 Moscow : Academy of Sciences of the USSR, Institute of Solid State Physics .
   Google Scholar
• Landwehr , G. and Handler , P. 1962 . J. Phys. Chem. Solids , 23 : 891
   Web of Science ®Google Scholar
• Landwehr , G. , Uchida , S. and Bangert , E. 1985 . Solid St. Electron. , 28 : 171
   Web of Science ®Google Scholar
• Uchida , S. , Landwehr , G. and Bangert , E. 1983 . Solid-St. Commun. , 45 : 869
   Web of Science ®Google Scholar
• Vul , B. M. and Zavaritskaya , E. I. 1979 . : 421 Inst. Phys. Conf Ser. No. 43
   Google Scholar
• Wu , X. J. , Skielko , V. and Haasen , P. 1982 . J. Phys. Paris C , 43 : C1 – 135 .
   Google Scholar
• Wu , C. M. and Yang , E. S. 1982 . I.E.E.E. Trans. electron Devices , ED-29 : 1598
   Web of Science ®Google Scholar