Design and Implementation of GaN-Based Two Switch Flyback With Synchronous Rectification for New Space Applications

References

• M. Al-Greer, et al., “Advances on system identification techniques for dc–dc switch mode power converter applications,” IEEE Trans. Power Electron, vol. 34, no. 7, pp. 6973–6990, 2019. DOI: 10.1109/TPEL.2018.2874997.
   Web of Science ®Google Scholar
• G. A. Mutch, “An analogue controlled switch-mode power system for a cubesat,” Ph.D. dissertation, Cape Peninsula University of Technology, 2013.
   Google Scholar
• A. B. Kareem, U. E. Akpudo and J.-W. Hur, “An integrated cost-aware dual monitoring framework for SMPS switching device diagnosis,” Electronics, vol. 10, no. 20, pp. 2487, 2021. DOI: 10.3390/electronics10202487.
   Web of Science ®Google Scholar
• S. Mudassir and J. Muhammad, “A review of gallium nitride (gan) based devices for high power and high frequency applications,” J. APPl. Emerging Sci., vol. 4, no. 2, pp. 141–146, 2016.
   Google Scholar
• C. Lin, et al., “Study on an interleaved buck power factor corrector with gallium nitride field effect transistor and integrated inductor,” IET Power Electronics, vol. 7, no. 10, pp. 2506–2516, 2014. DOI: 10.1049/iet-pel.2013.0642.
   Web of Science ®Google Scholar
• K. Boomer, L. Scheick, and A. Hammoud, “Body of knowledge (bok): Gallium nitride (gan) power electronics for space applications,” NASA Electronic Parts and Packaging Program Electronics Technology Workshop, 2019. gRC-E-DAA-TN70017.
   Google Scholar
• S. Chowdhury, et al., “Current status and scope of gallium nitride-based vertical transistors for high-power electronics application,” Semicond. Sci. Technol., vol. 28, no. 7, pp. 074014, 2013. DOI: 10.1088/0268-1242/28/7/074014.
   Web of Science ®Google Scholar
• T. Meng, H. Ben, and C. Li, “An input-series flyback converter with the coupled-inductor-based passive snubber for high-input voltage multiple-output applications,” IEEE Trans. Ind. Electron, vol. 66, no. 6, pp. 4344–4355, 2019. DOI: 10.1109/TIE.2018.2868025.
   Web of Science ®Google Scholar
• Y. Wei, Q. Luo, and H. A. Mantooth, “Synchronous rectification for llc resonant converter: an overview,” IEEE Trans. Power Electron, vol. 36, no. 6, pp. 7264–7280, 2021. DOI: 10.1109/TPEL.2020.3040603.
   Web of Science ®Google Scholar
• S. Moon, C. Chen, and R.-J. Wang, “A new dead time regulation synchronous rectification control method for high efficiency llc resonant converters,” IEEE Trans. Power Electron, vol. 36, no. 9, pp. 10673–10683, 2021. DOI: 10.1109/TPEL.2021.3060793.
   Web of Science ®Google Scholar
• S. S. Sethuraman, K. Santha, L. Mihet-Popa, and C. Bharatiraja, “A modified topology of a high efficiency bidirectional type dc–dc converter by synchronous rectification,” Electronics, vol. 9, no. 9, pp. 1555, 2020. DOI: 10.3390/electronics9091555.
   Web of Science ®Google Scholar
• R. Chinnappan, B. K. Singh and V. Chippalkatti, “Design and implementation of flyback converter with synchronous rectification for satellite electric power systems,” J. Elect. Engin., vol. 22, no. 1, pp. 2022, 2022.
   Google Scholar
• S. Coday, A. Barchowsky, and R. C. Pilawa-Podgurski, “A 10-level gan-based flying capacitor multilevel boost converter for radiation-hardened operation in space applications,” In 2021 IEEE Applied Power Electronics Conference and Exposition (APEC). IEEE, 2021. pp. 2798–2803. DOI: 10.1109/APEC42165.2021.9487143.
   Google Scholar
• Z. Chen, D. Ding, Y. Dong, Y. Shan, Y. Zeng, and J. Gao, “Design of a high-performance low-cost radiation-hardened phase-locked loop for space application,” IEEE Trans. Aerosp. Electron. Syst., vol. 56, no. 5, pp. 3588–3598, 2020. DOI: 10.1109/TAES.2020.2975448.
   Web of Science ®Google Scholar
• J. Harikumaran, et al., “Failure modes and reliability oriented system design for aerospace power electronic converters,” IEEE Open J. Ind. Electron. Soc, vol. 2, pp. 53–64, 2021. DOI: 10.1109/OJIES.2020.3047201.
   Google Scholar
• S. Musumeci and V. Barba, “Gallium nitride power devices in power electronics applications: state of art and perspectives,” Energies, vol. 16, no. 9, pp. 3894, 2023. DOI: 10.3390/en16093894.
   Web of Science ®Google Scholar
• S. Khoshzaman and I. Hahn, “A performance comparison of gan fet and silicon mosfet,” 2021 22nd IEEE International Conference on Industrial Technology (ICIT), Vol. 1. IEEE, 2021. pp. 127–133. DOI: 10.1109/ICIT46573.2021.9453693.
   Google Scholar
• N. E. Ives, et al., “Effects of proton-induced displacement damage on gallium nitride hemts in RF power amplifier applications,” IEEE Trans. Nucl. Sci., vol. 62, no. 6, pp. 2417–2422, 2015. DOI: 10.1109/TNS.2015.2499160.
   Web of Science ®Google Scholar
• A. Lidow, J. Witcher, and K. Smalley, “Enhancement mode gallium nitride (egantm) fet characteristics under long term stress,” In 2011 Government Microcircuits Applications and Critical Technology Conference (GOMACTech), Orlando, Florida, 2011.
   Google Scholar
• A. Lidow, A. Nakata, M. Rearwin, J. Strydom, and A. M. Zafrani, “Single-event and radiation effect on enhancement mode gallium nitride fets,” In 2014 IEEE Radiation Effects Data Workshop (REDW), Paris, France, 2014.
   Google Scholar
• L. Boyac I, “Proton irradiation and gamma-ray irradiation testing studies on the commercial grade ganfets to investigate their characteristics under the space radiation environment,” Master’s thesis, Middle East Technical University, 2019.
   Google Scholar
• H. Mostardinha, et al., “Pioneering evaluation of gan transistors in geostationary satellites,” Sci Rep, vol. 12, no. 1, pp. 12886, 2022. DOI: 10.1038/s41598-022-17179-y.
   PubMed Web of Science ®Google Scholar
• N. Lee, et al., “A high-power-density converter with a continuous input current waveform for satellite power applications,” IEEE Trans. Ind. Electron, vol. 67, no. 2, pp. 1024–1035, 2020. DOI: 10.1109/TIE.2019.2898584.
   Web of Science ®Google Scholar
• Z. Qian, et al., “Modeling and control of three-port dc/dc converter interface for satellite applications,” IEEE Trans. Power Electronics, vol. 25, no. 3, pp. 637–649, 2009.
   Web of Science ®Google Scholar
• D. Murthy-Bellur and M. K. Kazimierczuk, “Two-switch flyback PWM DC-DC converter in continuous-conduction mode,” Circuit Theory & Apps, vol. 39, no. 11, pp. 1145–1160, 2011. DOI: 10.1002/cta.690.
   Web of Science ®Google Scholar
• W. Wang, Q. Yu, M. Meng, P. Li, and M. Tang, “Single event effects in the high-input voltage dc/dc converter for aerospace applications,” In 2011 12th European Conference on Radiation and Its Effects on Components and Systems. IEEE, 2011, pp. 266–269.
   Google Scholar
• K. Sahu, “EEE-INST-002: instructions for eee parts selection, screening, qualification, and derating,” NASA, 2008. https://nepp.nasa.gov/DocUploads/FFB52B88-36AE-4378-A05B2C084B5EE2CC/EEE-INST-002add1.pdf.
   Google Scholar
• “GS61008T,” https://gansystems.com/wp-content/uploads/2020/04/GS61008T-DS-Rev-200402.pdf.
   Google Scholar
• “ADP1071,” https://www.analog.com/media/en/technical-documentation/data-sheets/ADP1071-1-1071-2.pdf.
   Google Scholar
• R. A. Reed, et al., “Assessing the impact of the space radiation environment on parametric degradation and single-event transients in optocouplers,” IEEE Trans. Nucl. Sci, vol. 48, no. 6, pp. 2202–2209, 2001. DOI: 10.1109/23.983196.
   Web of Science ®Google Scholar
• “ADUM4221,” https://www.analog.com/media/en/technical-documentation/data-sheets/adum4221_4221-1_4221-2.pdf. Accessed: Jan. 20, 2024.
   Google Scholar