Thermal Boundary Resistance in GaN Films Measured by Time Domain Thermoreflectance with Robust Monte Carlo Uncertainty Estimation

References

• A. Dadgar, T. Hempel, J. Bläsing, O. Schulz, S. Fritze, J. Christen, and A. Krost, Improving GaN‐on‐Silicon Properties for GaN Device Epitaxy, Physica Status Solidi C, 8(5), 1503–1508, 2011.
   Google Scholar
• D. G. Cahill, P. V. Braun, G. Chen, D. R. Clarke, S. Fan, K. E. Goodson, P. Keblinski, W. P. King, G. D. Mahan, and A. Majumdar, Nanoscale Thermal Transport. II. 2003–2012, Applied Physics Reviews, 1(1), 011305, 2014.
   Web of Science ®Google Scholar
• R. R. Reeber and K. Wang, Lattice Parameters and Thermal Expansion of GaN, Journal of Materials Research, 15(1), 40–44, 2000.
   Web of Science ®Google Scholar
• S. Nakanishi and T. Horiguchi, Surface Lattice Constants of Si (111), Ni (111) and Cu (111), Japanese Journal of Applied Physics, 20(3), L214–L216, 1981.
   Google Scholar
• G. T. Hohensee, W. P. Hsieh, M. D. Losego, and D. G. Cahill, Interpreting Picosecond Acoustics in the Case of Low Interface Stiffness, Review of Scientific Instruments, 83(11), 114902–114906, 2012. doi:10.1063/1.4766957
   PubMed Web of Science ®Google Scholar
• D. G. Cahill, Analysis of Heat Flow in Layered Structures for Time-Domain Thermoreflectance, Review of Scientific Instruments, 75(12), 5119–5122, 2004.
   Web of Science ®Google Scholar
• A. J. Schmidt, X. Y. Chen, and G. Chen, Pulse Accumulation, Radial Heat Conduction, and Anisotropic Thermal Conductivity in Pump-Probe Transient Thermoreflectance, Review of Scientific Instruments, 79(11), 114902–114911, 2008. doi:10.1063/1.3006335
   PubMed Web of Science ®Google Scholar
• A. Schmidt, M. Chiesa, X. Y. Chen, and G. Chen, An Optical Pump-Probe Technique for Measuring the Thermal Conductivity of Liquids, Review of Scientific Instruments, 79(6), 064902–064907, 2008. doi:10.1063/1.2937458
   PubMed Web of Science ®Google Scholar
• A. J. Schmidt, Optical Characterization of Thermal Transport from the Nanoscale to the Macroscale, Boston, MA: Massachusetts Institute of Technology, 2008.
   Google Scholar
• J. Liu, J. Zhu, M. Tian, X. Gu, A. Schmidt, and R. Yang, Simultaneous Measurement of Thermal Conductivity and Heat Capacity of Bulk and Thin Film Materials Using Frequency-Dependent Transient Thermoreflectance Method, Review of Scientific Instruments, 84(3), 034902, 2013.
   PubMed Web of Science ®Google Scholar
• D. G. Cahill and F. Watanabe, Thermal Conductivity of Isotopically Pure and Ge-Doped Si Epitaxial Layers from 300 to 550 K, Physical Review B, 70(23), 235322, 2004.
   Web of Science ®Google Scholar
• X. Wang, B. Cola, T. Bougher, S. Hodson, T. Fisher, and X. Xu, Photoacoustic Technique for Thermal Conductivity and Thermal Interface Measurements, in G. Chen, V. Prasad, and Y. Jaluria (eds.), Annual Review of Heat Transfer, 135–157, Redding, CT: Begell, 2013.
   Google Scholar
• C. D. Wei, X. Zheng, D. G. Cahill, and J. C. Zhao, Invited Article: Micron Resolution Spatially Resolved Measurement of Heat Capacity Using Dual-Frequency Time-Domain Thermoreflectance, Review of Scientific Instruments, 84(7), 07130–07139, 2013. doi:10.1063/1.4815867
   Google Scholar
• W. Jang, Z. Chen, W. Bao, C. N. Lau, and C. Dames, Thickness-Dependent Thermal Conductivity of Encased Graphene and Ultrathin Graphite, Nano Letters, 10(10), 3909–3913, 2010.
   PubMed Web of Science ®Google Scholar
• D. R. Thompson, S. R. Rao, and B. A. Cola, A Stepped-Bar Apparatus for Thermal Resistance Measurements, Journal of Electronic Packaging, 135(4), 041002, 2013.
   Google Scholar
• C. E. Papadopoulos and H. Yeung, Uncertainty Estimation and Monte Carlo Simulation Method, Flow Measurement and Instrumentation, 12(4), 291–298, 2001.
   Web of Science ®Google Scholar
• Y. K. Koh, Y. Cao, D. G. Cahill, and D. Jena, Heat-Transport Mechanisms in Superlattices, Advanced Functional Materials, 19(4), 610615, 2009.
   Web of Science ®Google Scholar
• A. S. Glen, J. S. Leo, M. Donald, and A. F. Jaime, Some Effects of Oxygen Impurities on AlN and GaN, Journal of Crystal Growth, 246(3–4), 287298, 2002.
   Google Scholar
• S. R. Choi, D. Kim, S.-H. Choa, S.-H. Lee, and J.-K. Kim, Thermal Conductivity of AlN and SiC Thin Films, International Journal of Thermophysics, 27(3), 896–905, 2006.
   Web of Science ®Google Scholar
• P. Kuo, G. Auner, and Z. Wu, Microstructure and Thermal Conductivity of Epitaxial AlN Thin Films, Thin Solid Films, 253(1), 223–227, 1994.
   Web of Science ®Google Scholar
• Y. Zhao, C. Zhu, S. Wang, J. Tian, D. Yang, C. Chen, H. Cheng, and P. Hing, Pulsed Photothermal Reflectance Measurement of the Thermal Conductivity of Sputtered Aluminum Nitride Thin Films, Journal of Applied Physics, 96(8), 4563–4568, 2004.
   Web of Science ®Google Scholar
• S. Zonghui, P. F. Justin, H. L. Jacob, A. P. Edward, F. D. Robert, and A. M. Jonathan, The Impact of Film Thickness and Substrate Surface Roughness on the Thermal Resistance of Aluminum Nitride Nucleation Layers, Journal of Applied Physics, 113(21), 213502, 2013.
   Web of Science ®Google Scholar
• B. F. Donovan, C. J. Szwejkowski, J. C. Duda, R. Cheaito, J. T. Gaskins, C.-Y. P. Yang, C. Constantin, R. E. Jones, and P. E. Hopkins, Thermal Boundary Conductance across Metal-Gallium Nitride Interfaces from 80 to 450 K, Applied Physics Letters, 105(20), 203502, 2014.
   Web of Science ®Google Scholar
• J. Cho, Y. Li, W. E. Hoke, D. H. Altman, M. Ashegi, and K. E. Goodson, Phonon Scattering in Strained Transition Layers for GaN Heteroepitaxy, Physical Review B, 89(11), 115301–115312, 2014. doi:10.1103/PhysRevB.89.115301
   Web of Science ®Google Scholar
• J. Liu, J. Zhu, M. Tian, X. K. Gu, A. Schmidt, and R. G. Yang, Simultaneous Measurement of Thermal Conductivity and Heat Capacity of Bulk and Thin Film Materials Using Frequency-Dependent Transient Thermoreflectance Method, Review of Scientific Instruments, 84(3), 034902–034914, 2013. doi:10.1063/1.4797479
   PubMed Web of Science ®Google Scholar
• C.-Y. Luo, H. Marchand, D. Clarke, and S. DenBaars, Thermal Conductivity of Lateral Epitaxial Overgrown GaN Films, Applied Physics Letters, 75(26), 4151–4153, 1999.
   Web of Science ®Google Scholar
• N. Killat, M. Montes, J. Pomeroy, T. Paskova, K. Evans, J. Leach, X. Li, Ü. Özgür, H. Morkoc, and K. Chabak, Thermal Properties of AlGaN/GaN HFETs on Bulk GaN Substrates, IEEE Electron Device Letters, 33(3), 366–368, 2012.
   Web of Science ®Google Scholar
• A. Sarua, H. Ji, K. P. Hilton, D. J. Wallis, M. J. Uren, T. Martin, and M. Kuball, Thermal Boundary Resistance between GaN and Substrate in AlGaN/GaN Electronic Devices, IEEE Transactions on Electronic Devices, 54(12), 31523158, 2007.
   Web of Science ®Google Scholar
• K. Gordiz and A. Henry, Examining the Effects of Stiffness and Mass Difference on the Thermal Interface Conductance between Lennard-Jones Solids, Scientific Reports, 5, 18361–18370, 2015. doi:10.1038/srep18361
   PubMedGoogle Scholar
• A. Manoi, J. W. Pomeroy, N. Killat, and M. Kuball, Benchmarking of Thermal Boundary Resistance in AlGaN/GaN HEMTs on SiC Substrates: Implications of the Nucleation Layer Microstructure, IEEE Electron Device Letters, 31(12), 1395–1397, 2010.
   Web of Science ®Google Scholar