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Original Articles

Alloying of self-organized semiconductor 3D islands

, , , , &
Pages 279-305 | Received 01 May 2006, Accepted 01 Aug 2006, Published online: 20 Feb 2007

References

  • Kouwenhoven , L and Marcus , C . 1998 . Quantum dots . Phys. World , 11 : 35
  • Petroff , PM , Lorke , A and Imamoglu , A . 2001 . Epitaxially self-assembled quantum dots . Phys. Today , 54 : 46
  • Kouwenhoven , L . 1995 . Coupled quantum dots as artificial molecules . Science , 268 : 1440
  • Kiravittaya , S , Rastelli , A and Schmidt , OG . 2005 . Self-assembled InAs quantum dots on patterned GaAs(001) substrates: Formation and shape evolution . Appl. Phys. Lett. , 87 : 243112
  • Rosei , F . 2004 . Nanostructured surfaces: challenges and frontiers in nanotechnology . J. Phys.: Cond. Matt. , 16 : S1373
  • Barth , JV , Costantini , G and Kern , K . 2005 . Engineering atomic and molecular nanostructures at surfaces . Nature , 437 : 671
  • Bimberg , D and Ledentsov , N . 2003 . Quantum dots: lasers and amplifiers . J. Phys.: Cond. Matt. , 15 : R1063
  • Knill , E , Laflamme , R and Milburn , GJ . 2001 . A scheme for efficient quantum computation with linear optics . Nature , 409 : 46
  • Gisin , N , Ribordy , GG , Tittel , W and Zbinden , H . 2002 . Quantum cryptography . Rev. Mod. Phys. , 74 : 145
  • Michler , P , Kiraz , A , Becher , C , Schoenfeld , WV , Petroff , PM , Zhang , LD , Hu , E and Imamoglu , A . 2000 . A quantum dot single-photon turnstile device . Science , 290 : 2282
  • Lent , CS and Tougaw , PD . 1997 . Device architecture for computing with quantum dots . Proc. IEEE , 85 : 541
  • Cole , T and Lusth , JC . 2001 . Quantum-dot cellular automata . Prog. Quantum Electron. , 25 : 165
  • Loss , D and DiVincenzo , DP . 1998 . Quantum computation with quantum dots . Phys. Rev. A , 57 : 120
  • Shor , PW . 1994 . “ Algorithms for quantum computing: discrete logarithms and factoring ” . In Proceedings of the 35th Annual Symposium on the Foundations of Computer Science , 124 Los Alamos : IEEE Press .
  • Yu , PM and Cardona , M . 2004 . Fundamentals of Semiconductors: Physics and Materials Properties , Berlin : Springer .
  • Bimberg , D , Grundmann , M and Ledentsov , NN . 1999 . Quantum Dot Heterostructures , Chichester : John Wiley .
  • Zhong , ZY and Bauer , G . 2004 . Site-controlled and size-homogeneous Ge islands on prepatterned Si (001) substrates . Appl. Phys. Lett. , 84 : 1922
  • Ratto , F , Locatelli , A , Fontana , S , Kharrazi , S , Ashtaputre , S , Kulkarni , SK , Heun , S and Rosei , F . 2006 . Diffusion dynamics during the nucleation and growth of Ge/Si nanostructures on Si(111) . Phys. Rev. Lett. , 96 : 096103
  • Schmidt , OG , Kiravittaya , S , Nakamura , Y , Heidemeyer , H , Songmuang , R , Muller , C , Jin-Phillipp , NY , Eberl , K , Wawra , H , Christiansen , S , Grabeldinger , H and Schweizer , H . 2002 . Self-assembled semiconductor nanostructures: climbing up the ladder of order . Surf. Sci. , 514 : 10
  • Liao , XZ , Zou , J , Cockayne , DJ , Jiang , ZM , Wang , X and Leon , R . 2000 . Composition and its impact on shape evolution in dislocated Ge(Si)/Si islands . Appl. Phys. Lett. , 77 : 1304
  • Zhang , YT , Floyd , M , Driver , KP , Drucker , J , Crozier , PA and Smith , DJ . 2002 . Evolution of Ge/Si(100) island morphology at high temperature . Appl. Phys. Lett. , 80 : 3623
  • McDaniel , EP , Jiang , Q , Crozier , PA , Drucker , J and Smith , DJ . 2005 . Kinetic control of Ge(Si)/Si(100) dome cluster composition . Appl. Phys. Lett. , 87 : 223101
  • Medeiros-Ribeiro , G , Malachias , A , Kycia , S , Magalhaes-Paniago , R , Kamins , TI and Williams , RS . 2005 . Elastic energy mapping of epitaxial nanocrystals . Appl. Phys. A: Mater. Sci. Process. , 80 : 1211
  • Morin , C , Hitchcock , AR , Cornelius , RM , Brash , JL , Urquhart , SG , Scholl , A and Doran , A . 2004 . Selective adsorption of protein on polymer surfaces studied by soft X-ray photoemission electron microscopy . J. Elect. Spectr. & Rel. Phenom. , 137–40 : 785
  • Ratto , F , Rosei , F , Locatelli , A , Cherifi , S , Fontana , S , Heun , S , Szkutnik , PD , Sgarlata , A , De Crescenzi , M and Motta , N . 2004 . Composition of Ge(Si) islands in the growth of Ge on Si(111) . Appl. Phys. Lett. , 84 : 4526
  • Ratto , F , Locatelli , A , Fontana , S , Kharrazi , S , Ashtaputre , S , Kulkarni , SK , Heun , S and Rosei , F . 2006 . Chemical mapping of individual semiconductor nanostructures . Small , 2 : 401
  • Ratto , F , Rosei , F , Locatelli , A , Cherifi , S , Fontana , S , Heun , S , Szkutnik , PD , Sgarlata , A , De Crescenzi , M and Motta , N . 2005 . Composition of Ge(Si) islands in the growth of Ge on Si(111) by x-ray spectromicroscopy . J. Appl. Phys. , 97 : 043516
  • Liu , N , Tersoff , J , Baklenov , O , Holmes , AL and Shih , CK . 2000 . Nonuniform composition profile in In0.5Ga0.5As alloy quantum dots . Phys. Rev. Lett. , 84 : 334
  • Lenz , A , Timm , R , Eisele , H , Hennig , C , Becker , SK , Sellin , RL , Pohl , UW , Bimberg , D and Dahne , M . 2002 . Reversed truncated cone composition distribution of In0.8Ga0.2As quantum dots overgrown by an In0.1Ga0.9As layer in a GaAs matrix . Appl. Phys. Lett. , 81 : 5150
  • Offermans , P , Koenraad , PM , Wolter , JH , Pierz , K , Roy , M and Maksym , PA . 2005 . Atomic-scale structure and photoluminescence of InAs quantum dots in GaAs and AlAs . Phys. Rev. B , 72 : 165332
  • Wiebach , T , Schmidbauer , M , Hanke , M , Raidt , H , Kohler , R and Wawra , H . 2000 . Strain and composition in SiGe nanoscale islands studied by x-ray scattering . Phys. Rev. B , 61 : 5571
  • Schmidt , OG , Denker , U , Christiansen , S and Ernst , F . 2002 . Composition of self-assembled Ge/Si islands in single and multiple layers . Appl. Phys. Lett. , 81 : 2614
  • Denker , U , Stoffel , M and Schmidt , OG . 2003 . Probing the lateral composition profile of self-assembled islands . Phys. Rev. Lett. , 90 : 196102
  • Alonso , MI , de la Calle , M , Osso , JO , Garriga , M and Goni , AR . 2005 . Strain and composition profiles of self-assembled Ge/Si(001) islands . J. Appl. Phys. , 98 : 33530
  • Katsaros , G , Costantini , G , Stoffel , M , Esteban , R , Bittner , AM , Rastelli , A , Denker , U , Schmidt , OG and Kern , K . 2005 . Kinetic origin of island intermixing during the growth of Ge on Si(001) . Phys. Rev. B , 72 : 195320
  • Wang , ZL . 2004 . Functional oxide nanobelts: Materials, properties and potential applications in nanosystems and biotechnology . Ann. Rev. Phys. Chem. , 55 : 159
  • Mathur , S , Shen , H , Lecerf , N , Kjekshus , A , Fjellvag , H and Goya , GF . 2002 . Nanocrystalline orthoferrite GdFeO3 from a novel heterobimetallic precursor . Adv. Mater. , 14 : 1405
  • Mathur , S , Shen , H , Sivakov , V and Werner , U . 2004 . Germanium nanowires and core-shell nanostructures by chemical vapor deposition of [Ge(C5H5)(2)] . Chem. Mater. , 16 : 2449
  • Robinson , JT , Liddle , JA , Minor , A , Radmilovic , V , Yi , DO , Greaney , PA , Long , KN , Chrzan , DC and Dubon , OD . 2005 . Metal-induced assembly of a semiconductor island lattice: Ge truncated pyramids on Au-patterned Si . Nano Lett. , 5 : 2070
  • Paul , N , Asaoka , H and Voigtlander , B . 2004 . Comparison between surfactant-mediated Bi/Ge/Si(111) epitaxy and Ge/Si(111) epitaxy . Surf. Sci. , 564 : 187
  • Bauer , E . 1958 . Phänomenologische theorie der kristallabscheidung an oberflächen, I-II . Z. Krist. , 110 : 372
  • Brune , H and Kern , K . 1997 . The Chemical Physics of Solid Surfaces and Heterogeneous Catalysis , Edited by: Woodruff , DAKaDP . Vol. 8 , 149 Amsterdam : Elsevier .
  • Bauer , E and Van der Merwe , JH . 1986 . Structure and growth of crystalline superlattices: From monolayer to superlattice . Phys. Rev. B , 33 : 3657
  • Motta , N . 2002 . Self-assembling and ordering of Ge/Si(111) quantum dots: scanning microscopy probe studies . J. Phys.: Cond. Matt. , 14 : 8353
  • Tsao , JY . 1993 . Materials Fundamentals of Molecular Beam Epitaxy , San Diego : Academic .
  • Denton , AR and Ashcroft , NW . 1991 . Vegard law . Phys. Rev. A , 43 : 3161
  • Tersoff , J . 1993 . Dislocations and strain relief in compositionally graded layers . Appl. Phys. Lett. , 62 : 693
  • Jesson , DE , Pennycook , SJ , Baribeau , JM and Houghton , DC . 1993 . Direct imaging of surface cusp evolution during strained-layer epitaxy and implications for strain relaxation . Phys. Rev. Lett. , 71 : 1744
  • Wedler , G , Walz , J , Hesjedal , T , Chilla , E and Koch , R . 1998 . Stress and relief of misfit strain of Ge/Si(001) . Phys. Rev. Lett. , 80 : 2382
  • Boscherini , F , Capellini , G , Di Gaspare , L , Rosei , F , Motta , N and Mobilio , S . 2000 . Ge-Si intermixing in Ge quantum dots on Si(001) and Si(111) . Appl. Phys. Lett. , 76 : 682
  • Malachias , A , Kycia , S , Medeiros-Ribeiro , G , Magalhaes-Paniago , R , Kamins , TI and Williams , RS . 2003 . 3D composition of epitaxial nanocrystals by anomalous x-ray diffraction: Observation of a Si-rich core in Ge domes on Si(100) . Phys. Rev. Lett. , 91 : 176101
  • Stangl , J , Daniel , A , Holy , V , Roch , T , Bauer , G , Kegel , I , Metzger , TH , Wiebach , T , Schmidt , OG and Eberl , K . 2001 . Strain and composition distribution in uncapped SiGe islands from x-ray diffraction . Appl. Phys. Lett. , 79 : 1474
  • Capellini , G , De Seta , M and Evangelisti , F . 2001 . SiGe intermixing in Ge/Si(100) islands . Appl. Phys. Lett. , 78 : 303
  • Magalhaes-Paniago , R , Medeiros-Ribeiro , G , Malachias , A , Kycia , S , Kamins , TI and Williams , RS . 2002 . Direct evaluation of composition profile, strain relaxation, and elastic energy of Ge : Si(001) self-assembled islands by anomalous x-ray scattering . Phys. Rev. B , 66 : 245312
  • Kolobov , AV , Oyanagi , H , Wei , SQ , Brunner , K , Abstreiter , G and Tanaka , K . 2002 . Local structure of Ge quantum dots self-assembled on Si(100) probed by x-ray absorption fine-structure spectroscopy . Phys. Rev. B , 66 : 75319
  • Motta , N , Rosei , F , Sgarlata , A , Capellini , G , Mobilio , S and Boscherini , F . 2002 . Evolution of the intermixing process in Ge/Si(111) self-assembled islands . Mat. Sci. Eng. B , 88 : 264
  • Floyd , M , Zhang , YT , Driver , KP , Drucker , J , Crozier , PA and Smith , DJ . 2003 . Nanometer-scale composition measurements of Ge/Si(100) islands . Appl. Phys. Lett. , 82 : 1473
  • Schulli , TU , Stoffel , M , Hesse , A , Stangl , J , Lechner , RT , Wintersberger , E , Sztucki , M , Metzger , TH , Schmidt , OG and Bauer , G . 2005 . Influence of growth temperature on interdiffusion in uncapped SiGe-islands on Si(001) determined by anomalous x-ray diffraction and reciprocal space mapping . Phys. Rev. B , 71 : 35326
  • Sonnet , P and Kelires , PC . 2002 . Monte Carlo studies of stress fields and intermixing in Ge/Si(100) quantum dots . Phys. Rev. B , 66 : 205307
  • Hadjisavvas , G and Kelires , PC . 2005 . Critical aspects of alloying and stress relaxation in Ge/Si(100) islands . Phys. Rev. B , 72 : 75334
  • Lang , C , Cockayne , DJH and Nguyen-Manh , D . 2005 . Alloyed Ge(Si)/Si(001) islands: The composition profile and the shape transformation . Phys. Rev. B , 72 : 155328
  • Kamins , TI , Medeiros-Ribeiro , G , Ohlberg , DAA and Williams , RS . 1998 . Dome-to-pyramid transition induced by alloying of Ge islands on Si(001) . Appl. Phys. A: Mater. Sci. Process. , 67 : 727
  • Chaparro , SA , Drucker , J , Zhang , Y , Chandrasekhar , D , McCartney , MR and Smith , DJ . 1999 . Strain-driven alloying in Ge/Si(100) coherent islands . Phys. Rev. Lett. , 83 : 1199
  • Lang , C , Nguyen-Manh , D and Cockayne , DJH . 2003 . Nonuniform alloying in Ge(Si)/Si(001) quantum dots . J. Appl. Phys. , 94 : 7067
  • Raiteri , P , Miglio , L , Valentinotti , F and Celino , M . 2002 . Strain maps at the atomic scale below Ge pyramids and domes on a Si substrate . Appl. Phys. Lett. , 80 : 3736
  • Yu , WB and Madhukar , A . 1997 . Molecular dynamics study of coherent island energetics, stresses, and strains in highly strained epitaxy (vol 79, pg 905, 1997) . Phys. Rev. Lett. , 79 : 4939
  • Spencer , BJ and Tersoff , J . 2001 . Stresses and first-order dislocation energetics in equilibrium Stranski-Krastanow islands . Phys. Rev. B , 63 : 205424
  • Denker , U , Sigg , H and Schmidt , OG . 2004 . Intermixing in Ge hut cluster islands . Appl. Surf. Sci. , 224 : 127
  • Tersoff , J . 1989 . Modeling solid-state chemistry: Interatomic potentials for multicomponent systems . Phys. Rev. B , 39 : 5566
  • Kelires , PC and Tersoff , J . 1989 . Equilibrium alloy properties by direct simulation: Oscillatory segregation at the Si-Ge(100) 2X1 surface . Phys. Rev. Lett. , 63 : 1164
  • Wagner , RJ and Gulari , E . 2004 . Simulation of Ge/Si intermixing during heteroepitaxy . Phys. Rev. B , 69 : 195312
  • Nurminen , L , Tavazza , F , Landau , DP , Kuronen , A and Kaski , K . 2003 . Reconstruction and intermixing in thin Ge layers on Si(001) . Phys. Rev. B , 68 : 085326
  • Cho , JH and Kang , MH . 2000 . Ge-Si intermixing at the Ge/Si(001) surface . Phys. Rev. B , 61 : 1688
  • Tarus , J , Tantarimaki , M and Nordlund , K . 2005 . Segregation in SiGe clusters . Nucl. Instr. Meth. Phys. Res. B , 228 : 51
  • Ross , FM , Tromp , RM and Reuter , MC . 1999 . Transition states between pyramids and domes during Ge/Si island growth . Science , 286 : 1931
  • Montalenti , F , Raiteri , P , Migas , DB , von Kanel , H , Rastelli , A , Manzano , C , Costantini , G , Denker , U , Schmidt , OG , Kern , K and Miglio , L . 2004 . Atomic-scale pathway of the pyramid-to-dome transition during Ge growth on Si(001) . Phys. Rev. Lett. , 93 : 216102
  • Rastelli , A , Stoffel , M , Tersoff , J , Kar , GS and Schmidt , OG . 2005 . Kinetic evolution and equilibrium morphology of strained islands . Phys. Rev. Lett. , 95 : 026103
  • Denker , U , Rastelli , A , Stoffel , M , Tersoff , J , Katsaros , G , Costantini , G , Kern , K , Jin-Phillipp , NY , Jesson , DE and Schmidt , OG . 2005 . Lateral motion of SiGe islands driven by surface-mediated alloying . Phys. Rev. Lett. , 94 : 216103
  • Willoughby , AFW . 1978 . Atomic diffusion in semiconductors . Rep. Prog. Phys. , 41 : 1665
  • Sugii , N . 2001 . Thermal stability of the strained-Si/Si0.7Ge0.3 heterostructure . J. Appl. Phys. , 89 : 6459
  • Chang , SJ , Wang , KL , Bowman , RC and Adams , PM . 1989 . Interdiffusion in a symmetrically strained Ge/Si superlattice . Appl. Phys. Lett. , 54 : 1253
  • Sunamura , H , Fukatsu , S , Usami , N and Shiraki , Y . 1993 . Luminescence study on interdiffusion in strained Si1-XGeX/Si single quantum-wells grown by molecular-beam epitaxy . Appl. Phys. Lett. , 63 : 1651
  • Boucaud , P , Wu , L , Guedj , C , Julien , FH , Sajnes , I , Campidelli , Y and Garchery , L . 1996 . Photoluminescence and intersubband absorption spectroscopy of interdiffused Si/SiGe quantum wells . J. Appl. Phys. , 80 : 1414
  • Wan , J , Luo , YH , Jiang , ZM , Jin , G , Liu , JL , Wang , KL , Liao , XZ and Zou , J . 2001 . Ge/Si interdiffusion in the GeSi dots and wetting layers . J. Appl. Phys. , 90 : 4290
  • Rosei , F and Raiteri , P . 2002 . Stress induced surface melting during the growth of the Ge wetting layer on Si(001) and Si(111) . Appl. Surf. Sci. , 195 : 16
  • Aubertine , DB , Mander , MA , Ozguven , N , Marshall , AF , McIntyre , PC , Chu , JO and Mooney , PM . 2002 . Observation and modeling of the initial fast interdiffusion regime in Si/SiGe multilayers . J. Appl. Phys. , 92 : 5027
  • Uberuaga , BP , Leskovar , M , Smith , AP , Jonsson , H and Olmstead , M . 2000 . Diffusion of Ge below the Si(100) surface: Theory and experiment . Phys. Rev. Lett. , 84 : 2441
  • Mo , YW , Kleiner , J , Webb , MB and Lagally , MG . 1991 . Activation-energy for surface diffusion of Si on Si(001): A Scanning-tunneling-microscopy study . Phys. Rev. Lett. , 66 : 1998
  • Milman , V , Jesson , DE , Pennycook , SJ , Payne , MC , Lee , MH and Stich , I . 1994 . Large-scale ab-initio study of the binding and diffusion of a Ge adatom on the Si(100) surface . Phys. Rev. B , 50 : 2663
  • Ide , T , Sakai , A and Shimizu , K . 1999 . Nanometer-scale imaging of strain in Ge island on Si(001) surface . Thin Solid Films , 357 : 22
  • Xue , F , Qin , J , Cui , J , Fan , YL , Jiang , ZM and Yang , XJ . 2005 . Studying the lateral composition in Ge quantum dots on Si(001) by conductive atomic force microscopy . Surf. Sci. , 592 : 65
  • Heun , S , Watanabe , Y , Ressel , B , Bottomley , D , Schmidt , T and Prince , KC . 2001 . Core-level photoelectron spectroscopy from individual heteroepitaxial nanocrystals on GaAs(001) . Phys. Rev. B , 63 : 125335
  • Raiteri , P and Miglio , L . (private communication)
  • Spencer , BJ and Blanariu , M . 2005 . Shape and composition map of a prepyramid quantum dot . Phys. Rev. Lett. , 95 : 206101
  • Rastelli , A , von Känel , H , Albini , G , Raiteri , P , Migas , DB and Miglio , L . 2003 . Morphological and compositional evolution of the Ge/Si(001) surface during exposure to a Si flux . Phys. Rev. Lett. , 90 : 216104
  • Kohler , U , Jusko , O , Muller , B , Hornvonhoegen , M and Pook , M . 1992 . Layer-by-layer growth of germanium on Si(100): Strain-induced morphology and the influence of surfactants . Ultramicroscopy , 42 : 832
  • Tomitori , M , Watanabe , K , Kobayashi , M and Nishikawa , O . 1994 . STM study of the Ge growth mode on Si(001) substrates . Appl. Surf. Sci. , 76 : 322
  • Huang , L , Liu , F , Lu , GH and Gong , XG . 2006 . Surface mobility difference between Si and Ge and its effect on growth of SiGe alloy films and islands . Phys. Rev. Lett. , 96 : 16103
  • Rastelli , A and von Känel , H . 2002 . Surface evolution of faceted islands . Surf. Sci. , 515 : L493
  • Katsaros , G , Rastelli , A , Stoffel , M , Acosta-Diaz , P , Schmidt , OG , Costantini , G and Kern , K . (in preparation)
  • Kamins , TI , Medeiros-Ribeiro , G , Ohlberg , DAA and Williams , RS . 1999 . Evolution of Ge islands on Si(001) during annealing . J. Appl. Phys. , 85 : 1159
  • Stoffel , M , Rastelli , A , Merdzhanova , T and Schmidt , OG . (submitted)
  • Katsaros , G , Rastelli , A , Stoffel , M , Isella , G , von Kanel , H , Bittner , AM , Tersoff , J , Denker , U , Schmidt , OG , Costantini , G and Kern , K . 2006 . Investigating the lateral motion of SiGe islands by selective chemical etching . Surf. Sci. , 600 : 2606

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