References
- Heo , J , Kim , D , Koo , B , Kim , J , Kim , C , Noh , Y , Baek , S , Shin , Y , Chung , U and Moon , J . 2005 . “ Effects of plasma nitridation on the electrical properties of nitrided oxide gate dielectric for DRAM application ” . In Proceedings of the 35th European Solid-State Device Research Conference 205 – 208 .
- Elnaby , M , Ikeda , A , Hattori , R and Kuroki , Y . 2000 . Effect of nitrogen plasma conditions on the electrical properties of silicon oxynitrided thin films for flash memory applications , 251 – 256 . ICM : in Proceedings of the 12th International Conference on Microelectronics .
- Ghetti , A , Benvenuti , A , Molteni , G , Alberci , S , Soncini , V and Pavan , A . 2004 . “ Electron Devices Meeting ” . In Experimental and simulation study of boron segregation and diffusion during gate oxidation and spike annealing , IEDM Technical Digest, IEEE International 983 – 986 .
- Hur , J-H , Park , S-H , Leex , J-H , Park , J-T , Sel , J-S , Kim , J-W , Song , S-B , Lee , J-Y , Lee , J-H Son , S-J . 2004 . “ 8 Gb MLC (multi-level cell) NAND flash memory using 63 nm process technology ” . In Electron Devices Meeting, IEDM Technical Digest , 873 – 876 . IEEE International .
- Oh , H-S , Lee , S-C , Lee , C-S , Oh , D-Y , Kim , T-K , Song , J-H , Lee , K-H , Park , Y-K , Choi , J-H and Kong , J-T . 2004 . “ 3-dimensional analysis on the cell string current of NAND flash memory ” . In Non-Volatile Memory Technology Symposium Vol. 7 , 137 – 139 .
- White , M , Wiele , F and Lambrot , J . 1980 . High-accuracy MOS models for computer-aided design . IEEE Trans. Electron Devices , 27 : 899 – 906 .
- Tol , MVan der and Chamberlain , S . 1989 . Potential and electron distribution model for the buried-channel MOSFET . IEEE Trans. Electron Devices , 36 : 670 – 688 .