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Science and Technology of Advanced Materials Volume 15, 2014 - Issue 3

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High-rate and wide-area deposition of epitaxial Si films by mesoplasma chemical vapor deposition

Sudong Wu Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, JapanCorrespondence[email protected]

Kento Sawada Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan

Tomonori Ichimaru Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan

Takanori Yamamoto Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan

Makoto Kambara Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan

Toyonobu Yoshida Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan

Article: 035001 | Received 03 Mar 2014, Accepted 16 Apr 2014, Published online: 14 May 2014

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https://doi.org/10.1088/1468-6996/15/3/035001
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