References
- LeeCYanHBrusL EHeinzT FHoneJRyuS 2010 Anomalous lattice vibrations of single- and few-layer MoS2 ACS Nano 4 2695 2700 2695–700 10.1021/nn1003937
- RadisavljevicBRadenovicABrivioJGiacomettiVKisA 2011 Single-layer MoS2 transistors Nat. Nanotechnol. 6 147 150 147–50 10.1038/nnano.2010.279
- NovoselovK SGeimA KMorozovS VJiangDKatsnelsonM IGrigorievaI VDubonosS VFirsovA A 2005 Two-dimensional gas of massless Dirac fermions in graphene Nature 438 197 200 197–200 10.1038/nature04233
- SchwierzF 2010 Graphene transistors Nat. Nanotechnol. 5 487 496 487–96 10.1038/nnano.2010.89
- LiaoLLinY CBaoMChengRBaiJLiuYQuYWangK LHuangYDuanX 2010 High-speed graphene transistors with a self-aligned nanowire gate Nature 467 305 308 305–8 10.1038/nature09405
- LinY M 2011 Wafer-scale graphene integrated circuit Science 332 1294 1297 1294–7 10.1126/science.1204428
- XiaFMuellerTLinY MValdes-GarciaAAvourisP 2009 Ultrafast graphene photodetector Nat. Nanotechnol. 4 839 843 839–43 10.1038/nnano.2009.292
- MakK FLeeCHoneJShanJHeinzT F 2010 Atomically thin MoS(2): a new direct-gap semiconductor Phys. Rev. Lett. 105 136805 10.1103/PhysRevLett.105.136805
- SplendianiASunLZhangYLiTKimJChimC YGalliGWangF 2010 Emerging photoluminescence in monolayer MoS2 Nano Lett. 10 1271 1275 1271–5 10.1021/nl903868w
- GhatakSPalA NGhoshA 2011 Nature of electronic states in atomically thin MoS(2) field-effect transistors ACS Nano 5 7707 7712 7707–12 10.1021/nn202852j
- LiuHYeP D D 2012 MoS2 dual-gate MOSFET with atomic-layer-deposited Al2O3 as top-gate dielectric IEEE Electr. Device Lett. 33 546 548 546–8 10.1109/LED.2012.2184520
- LiuHGuJ JYeP D 2012 MoS2 nanoribbon transistors: transition from depletion mode to enhancement mode by channel-width trimming IEEE Electr. Device Lett. 33 1273 1275 1273–5 10.1109/LED.2012.2202630
- JariwalaDSangwanV KLateD JJohnsJ EDravidV PMarksT JLauhonL JHersamM C 2013 Band-like transport in high mobility unencapsulated single-layer MoS2 transistors Appl. Phys. Lett. 102 173107 10.1063/1.4803920
- LiuHSiMNajmaeiSNealA TDuYAjayanP MLouJYeP D 2013 Statistical study of deep submicron dual-gated field-effect transistors on monolayer chemical vapor deposition molybdenum disulfide films Nano Lett. 13 2640 2646 2640–6 10.1021/nl400778q
- WangHYuL LLeeY HShiY MHsuAChinM LLiL JDubeyMKongJPalaciosT 2012 Integrated circuits based on bilayer MoS2 transistors Nano Lett. 12 4674 4680 4674–80 10.1021/nl302015v
- YuTLimBXiaY 2010 Aqueous-phase synthesis of single-crystal ceria nanosheets Angew. Chem. 49 4484 4487 4484–7 10.1002/anie.201001521
- MatteH SGomathiAMannaA KLateD JDattaRPatiS KRaoC N 2010 MoS2 and WS2 analogues of graphene Angew. Chem. 49 4059 4062 4059–62 10.1002/anie.201000009
- LateD JLiuBMatteH SDravidV PRaoC N 2012 Hysteresis in single-layer MoS2 field effect transistors ACS Nano 6 5635 5641 5635–41 10.1021/nn301572c
- WangQ HKalantar-ZadehKKisAColemanJ NStranoM S 2012 Electronics and optoelectronics of two-dimensional transition metal dichalcogenides Nat. Nanotechnol. 7 699 712 699–712 10.1038/nnano.2012.193
- BertolazziSKrasnozhonDKisA 2013 Nonvolatile memory cells based on MoS2/graphene heterostructures ACS Nano 7 3246 3252 3246–52 10.1021/nn3059136
- LateD J 2013 Sensing behavior of atomically thin-layered MoS2 transistors ACS Nano 7 4879 4891 4879–91 10.1021/nn400026u
- DhakalK PDuongD LLeeJNamHKimMKanMLeeY HKimJ 2014 Confocal absorption spectral imaging of MoS2: optical transitions depending on the atomic thickness of intrinsic and chemically doped MoS2 Nanoscale 6 13028 13035 13028–35 10.1039/C4NR03703K
- ChoiM SQuDLeeDLiuXWatanabeKTaniguchiTYooW J 2014 Lateral MoS2 p–n junction formed by chemical doping for use in high-performance optoelectronics ACS Nano 8 9332 9340 9332–40 10.1021/nn503284n
- KimS 2012 High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals Nat. Commun. 3 1011 10.1038/ncomms2018
- MouriSMiyauchiYMatsudaK 2013 Tunable photoluminescence of monolayer MoS2 via chemical doping Nano Lett. 13 5944 5948 5944–8 10.1021/nl403036h
- FangHTosunMSeolGChangT CTakeiKGuoJJaveyA 2013 Degenerate n-doping of few-layer transition metal dichalcogenides by potassium Nano Lett. 13 1991 1995 1991–5 10.1021/nl400044m
- ShiYHuangJ KJinLHsuY TYuS FLiL JYangH Y 2013 Selective decoration of Au nanoparticles on monolayer MoS2 single crystals Sci. Rep. 3 1839 10.1038/srep01839
- LiYXuC YHuPZhenL 2013 Carrier control of MoS2 nanoflakes by functional self-assembled monolayers ACS Nano 7 7795 7804 7795–804 10.1021/nn402682j
- SinghA KAndleebSSinghJDungH TSeoYEomJ 2014 Ultraviolet-light-induced reversible and stable carrier modulation in MoS2 field-effect transistors Adv. Funct. Mater. 24 7125 7132 7125–32
- SinghA KAhmadMSinghV KShinKSeoYEomJ 2013 Tailoring the electrical properties of graphene layers by molecular doping ACS Appl. Mater. Interfaces 5 5276 5281 5276–81 10.1021/am401119j
- SinghA KIqbalM WSinghV KIqbalM ZLeeJ HChunS HShinKEomJ 2012 Molecular n-doping of chemical vapor deposition grown graphene J. Mater. Chem. 22 15168 15174 15168–74 10.1039/c2jm32716c
- HanS W 2011 Band-gap transition induced by interlayer van der Waals interaction in MoS2 Phys. Rev. B 84 045409 10.1103/PhysRevB.84.045409
- KiriyaDTosunMZhaoPKangJ SJaveyA 2014 Air-stable surface charge transfer doping of MoS(2) by benzyl viologen J. Am. Chem. Soc. 136 7853 7856 7853–6 10.1021/ja5033327
- YuL 2014 Graphene/MoS2 hybrid technology for large-scale two-dimensional electronics Nano Lett. 14 3055 3063 3055–63 10.1021/nl404795z