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Materials at High Temperatures Volume 32, 2015 - Issue 1-2: Microscopy of Oxidation 9

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Original Research Papers

Comparing depth profiling of oxide scale on SOFC interconnect-materials using ToF-SIMS with ⁶⁹Ga⁺, Bi₃⁺/Cs⁺ and C₆₀⁺/C₆₀²⁺ as primary and sputter ions

J. HallEnvironmental Inorganic ChemistryChalmers University of Technology, 412 96Gothenburg, Sweden

U. BexellDalarna University, 79188 Falun, Sweden

J. S. FletcherDepartment of Chemistry and Molecular BiologyUniversity of Gothenburg, 412 96Gothenburg, Sweden

S. CanovicEnvironmental Inorganic ChemistryChalmers University of Technology, 412 96Gothenburg, Sweden

P. MalmbergEnvironmental Inorganic ChemistryChalmers University of Technology, 412 96Gothenburg, Sweden;Department of Chemistry and Molecular BiologyUniversity of Gothenburg, 412 96Gothenburg, SwedenCorrespondence[email protected]

Pages 133-141 | Received 16 Apr 2014, Accepted 03 Jun 2014, Published online: 19 Jan 2015

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https://doi.org/10.1179/0960340914Z.00000000089
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Comparing depth profiling of oxide scale on SOFC interconnect-materials using ToF-SIMS with ⁶⁹Ga⁺, Bi₃⁺/Cs⁺ and C₆₀⁺/C₆₀²⁺ as primary and sputter ions

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Comparing depth profiling of oxide scale on SOFC interconnect-materials using ToF-SIMS with 69Ga+, Bi3+/Cs+ and C60+/C602+ as primary and sputter ions

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Comparing depth profiling of oxide scale on SOFC interconnect-materials using ToF-SIMS with ⁶⁹Ga⁺, Bi₃⁺/Cs⁺ and C₆₀⁺/C₆₀²⁺ as primary and sputter ions