References
- P. Allongue, H. Brune and H. Gerischer: ‘In situ STM observations of the etching of n-Si(111) in NaOH solutions’, Surf. Sci., 1992, 275, 414–423.
- O. Tobail: ‘Porous silicon for thin solar cell fabrication’, PhD thesis, Institut für Physikalische Elektronik der Universität Stuttgart, Stuttgart, Germany, 2008.
- M. Mynbaeva, A. Titkov, A. Kryganovskii, V. Ratnikov, K. Mynbaev, H. Huhtinen, R. Laiho and V. Dmitriev: ‘Structural characterization and strain relaxation in porous GaN layers’, Appl. Phys. Lett., 2000, 76, 1113–1115.
- L. C. Chen, C. K. Wang, J. B. Huang and L. S. Hong: ‘A nanoporous AlN layer patterned by anodic aluminum oxide and its application as a buffer layer in a GaN-based light-emitting diode’, Nanotechnology, 2009, 20, 085303–085306.
- D. Zhuang and J. H. Edgar: ‘Wet etching of GaN, AlN, and SiC: a review’, Mater. Sci. Eng. R Rep., 2005, 48, 1–46.
- R. Radzali, N. Zainal, F. K. Yam and Z. Hassan: ‘Nanoporous InGaN of high In composition prepared by KOH electrochemical etching’, Mater. Sci. Semicond. Process., 2013, 16, 2051–2057.
- H. Hartono, C. B. Soh, S. J. Chua and E. A. Fitzgerald: ‘Fabrication and characterization of nano-porous GaN template for strain relaxed GaN growth’, Phys. Status Solidi B, 2007, 244, 1793–1796.
- C. B. Soh, S. Y. Chow, L. Y. Tan, H. Hartono, W. Liu and S. J. Chua: ‘Enhanced luminescence efficiency due to carrier localization in InGaN/GaN heterostructures grown on nanoporous GaN templates’, Appl. Phys. Lett., 2008, 93, 173107-1–173107-3
- A. P. Vajpeyi, S. J. Chua, S. Tripathy, W. Liu, P. Chen and L. S. Wang: ‘High optical quality nanoporous GaN prepared by photoelectrochemical etching’, Electrochem. Solid-State Lett., 2005, 8, G85–G88.