Advanced search
Publication Cover
Materials Research Innovations Volume 19, 2015 - Issue sup5: Global Conference on Materials Science and Engineering (CMSE 2014)
Submit an article Journal homepage
201
Views
5
CrossRef citations to date
0
Altmetric
Research Papers

Simulation of graphene–GaAs Schottky barrier solar cell with AMPS-1D

S. J. GongSchool of Materials Science and EngineeringXihua University, Chengdu610039, China
,
Q. C. PengSchool of Materials Science and EngineeringXihua University, Chengdu610039, ChinaCorrespondence[email protected]
&
X. W. ZhaoDepartment of PhysicsTokyo University of Science, Tokyo162-8601, Japan
Pages S5-760-S5-763 | Received 20 Oct 2014, Accepted 18 Dec 2014, Published online: 30 May 2015

References

  • A. A. Balandin, S. Ghosh, W. Z. Bao, I. Calizo, D. Teweldebrhan, F. Mao and C. N. Lau: ‘Superior thermal conductivity of single-layer grapheme’, Nano Lett., 2008, 8, 902.
  • A. K. Geim and K. S. Novoselov: ‘The rise of graphene’, Nat. Mater., 2007, 6, 183.
  • K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorleva and A. A. Firsov: ‘Electric field effect in atomically thin carbon films’, Science, 2004, 306, 666.
  • Y. B. Zhang, Y. W. Tan, H. L. Stormer and P. Kim: ‘Experimental observation of the quantum Hall effect and Berry's phase in graphene’, Nature, 2005, 438, 201.
  • K. S. Novoselov, Z. Jiang, Y. Zhang, S. V. Morozov, H. L. Stormer, U. Zeitler, J. C. Maan and G. S. Boebinger: ‘Room-temperature quantum hall effect in graphene’, Science, 2007, 315, 1379.
  • K. I. Bolotin, K. J. Sikes, Z. Jiang, M. Klima, G. Fudenberg, J. Hone, P. Kim, H. L. Stormer: ‘Ultrahigh electron mobility in suspended graphene’, Solid State Commun.., 2008, 146, 351.
  • R. R. Nair, P. Blake, A. N. Grigorenko, K. S. Novoselov, T. J. Booth, T. Stauber, N. M. Peres and A. K. Geim: ‘Fine structure constant defines visual transparency of graphene’, Science, 2008, 320, 1308.
  • T. Stauber, N. M. R. Peres and A. K. Geim: ‘Optical conductivity of graphene in the visible region of the spectrum’, Phys. Rev. B, 2008, 78, 085432.
  • X. P. Lu, Y. L. Deng, Y. X. Xu, S. S. Wang, J. He and X. Y. Ma: ‘Optoelectronic characteristics of graphene/Si Schottky solar cells’, Phys. Experiment., 2013, 33, 1.
  • Z. W. Zhang, J. F. Lu, W. Y. Chi, L. X. Wang and M. B. Chen: ‘Technique development and prospects analysis of GaAs Solar Cell’, Aerosp. Shanghai, 2003, 3, 33.
  • A. R. Adams: ‘Properties of gallium arsenide’; Beijing: Science Press, Revised October 1990.
  • http://www.docin.com/p-521674985.html.
  • M. Sze: ‘Semiconductor devices physics and technology’; Suzhou: Suzhou University Press, Revised April 2003.
  • E. K. Liu, B. S. Zhu and J. S. Luo: ‘Semiconductor physics’; Beijing: National Defence Industry Press, Revised June 1999.

Reprints and Corporate Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

To request a reprint or corporate permissions for this article, please click on the relevant link below:

Order Reprints Request Corporate Permissions

Academic Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

Obtain permissions instantly via Rightslink by clicking on the button below:

Request Academic Permissions

If you are unable to obtain permissions via Rightslink, please complete and submit this Permissions form. For more information, please visit our Permissions help page.

Related research

People also read lists articles that other readers of this article have read.

Recommended articles lists articles that we recommend and is powered by our AI driven recommendation engine.

Cited by lists all citing articles based on Crossref citations.
Articles with the Crossref icon will open in a new tab.