44
Views
11
CrossRef citations to date
0
Altmetric
Original Article

Fabrication of ordered ripple patterns on GaAs(100) surface using 60 keV Ar+ beam irradiation

, , &
Pages 543-546 | Received 21 Jan 2013, Accepted 19 Mar 2013, Published online: 03 Dec 2013

References

  • Tseng YC, Mane AU, Elam JW, Darling SB: ‘Enhanced lithographic imaging layer meets semiconductor manufacturing specification a decade early’, Adv. Mater., 2012, 24, 2608–2613.
  • Bowen AM, Motala MJ, Lucas JM, Gupta S, Baca AJ, Mihi A, Alivisatos AP, Braun PV, Nuzzo RG: ‘Triangular elastomeric stamps for optical applications: near-field phase shift photolithography, 3D proximity field patterning, embossed antireflective coatings, and SERS sensing’, Adv. Funct. Mater., 2012, 22, 2927–2938.
  • Facsko S, Dekorsy T, Koerdt C, Trappe C, Kurz H, Vogt A, Hartnagel HL: ‘Formation of ordered nanoscale semiconductor dots by ion sputtering’, Science, 1999, 285, (5433), 1551–1553.
  • Facsko S, Bobek T, Stahl A, Kurz H, Dekorsy T: ‘Dissipative continuum model for self-organized pattern formation during ion-beam erosion’, Phys. Rev. B, 2004, 69B, (15), 153412.
  • Zhang J, Wei Q, Lian J, Jiang W, Weber WJ, Ewing RC: ‘Self-assembly of well-aligned 3C-SiC ripples by focused ion beam’, Appl. Phys. Lett., 2008, 92, (19), 3107.
  • Shenoy VB, Chan WL, Chason E: ‘Compositionally modulated ripples induced by sputtering of alloy surfaces’, Phys. Rev. Lett., 2007, 98, (25), 256101.
  • Motta FC, Shipman PD, Bradley RM: ‘Highly ordered nanoscale surface ripples produced by ion bombardment of binary compounds’, J. Phys. D, 2012, 45D, (12), 122001.
  • Yang HN, Wang GC, Lu TM: ‘Anomalous dynamic scaling on the ion-sputtered Si (111) surface’, Phys. Rev. B, 1994, 50B, (11), 7635.
  • Bradley RM, Harper JME: ‘Theory of ripple topography induced by ion bombardment’, J. Vac. Sci. Technol. A, 1988, 6A, (4), 2390–2395.
  • Carter G, Vishnyakov V: ‘Roughening and ripple instabilities on ion-bombarded Si’, Phys. Rev. B, 1996, 54B, (24), 17647.
  • Katharria YS, Kumar S, Lakshmy PS, Kanjilal D, Sharma AT: ‘Self-organization of 6H-SiC (0001) surface under keV ion irradiation’, J. Appl. Phys., 2007, 102, (4), 044301–044301.
  • Datta DP, Chini TK: ‘Coarsening of ion-beam-induced surface ripple in Si: nonlinear effect vs. geometrical shadowing’, Phys. Rev. B, 2007, 76B, (7), 075323.
  • Ziegler JF: ‘Particle interactions with matter’, http://www.srim.org
  • Kumar T, Kumar M, Gupta G, Pandey RK, Verma S, Kanjilal D: ‘Role of surface composition in morphological evolution of GaAs nano-dots with low-energy ion irradiation’, Nanoscale Res. Lett., 2012, 7, (1), 1–8.
  • Datta D, Mondal S, Bhattacharyya SR: ‘Growth process of GaAs ripples as a function of incident Ar-ion dose’, Appl. Surf. Sci., 2011, 258, 4152–4155.
  • Costantini G, Rusponi S, de Mongeot FB, Boragno C, Valbusa U: ‘Periodic structures induced by normal-incidence sputtering on Ag (110) and Ag (001): flux and temperature dependence’, J. Phys. Condens. Matter, 2001, 13, (26), 5875.
  • Bradley RM, Shipman PD: ‘Spontaneous pattern formation induced by ion bombardment of binary compounds’, Phys. Rev. Lett., 2010, 105, (14), 145501.
  • Shipman PD, Bradley RM: ‘Theory of nanoscale pattern formation induced by normal-incidence ion bombardment of binary compounds’, Phys. Rev. B, 2011, 84B, (8), 085420.

Reprints and Corporate Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

To request a reprint or corporate permissions for this article, please click on the relevant link below:

Academic Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

Obtain permissions instantly via Rightslink by clicking on the button below:

If you are unable to obtain permissions via Rightslink, please complete and submit this Permissions form. For more information, please visit our Permissions help page.