Advanced indium tin oxide ceramic sputtering targets (rotary and planar) for transparent conductive nanosized films

References

• D. S. Ginley (ed.), H. Hosono and D. C. Paine (assoc. ed.): ‘Handbook of transparent conductors’; 2010, New York, Springer.
   Google Scholar
• Hosono H: ‘Recent progress in transparent oxide semiconductors: materials and device application’, Thin Solid Films, 2007, 515, 6000–6014.
   Web of Science ®Google Scholar
• Exarhos GJ, Zhou X.-D: ‘Discovery-based design of transparent conducting oxide films (review)’, Thin Solid Films, 2007, 515, 7025–7052.
   Web of Science ®Google Scholar
• Vossen JL:‘Transparent conducting films’ in ‘Physics thin films’(, Haas G, et al..), Vol. 9, 1–71; 1977, New York, Academic.
   Google Scholar
• Ginley DS, Bright C: ‘Transparent conducting oxides’, MRS Bull., 2000, 8, 15–18.
   Google Scholar
• Minami T: ‘New n-type transparent conducting oxides’, MRS Bull., 2000, 8, 38–44.
   Web of Science ®Google Scholar
• Hamberg I, Granquist CG: ‘Evaporated Sn-doped In2O3 films: basic optical properties and applications to energy-efficient windows’, J. Appl. Phys., 1986, 60, R123–R160.
   Web of Science ®Google Scholar
• Castaneda L: ‘Present status of the development and application of transparent conductors oxide thin solid films’, Mater. Sci. Appl., 2011, 2, 1233–1242.
   Google Scholar
• Utsumi K, Matsunaga O, Takahata T: ‘Low resistivity ITO film prepared using the ultra high density ITO target’, Thin Solid Films, 1998, 334, 30–34.
   Web of Science ®Google Scholar
• Utsumi K, Iigusa H, Tokumaru R, Song PK, Shigesato Y: ‘Study of In2O3–SnO2 transparent and conductive films prepared by D. C. sputtering using high density ceramic targets’, Thin Solid Films, 2003, 445, (2), 229–234.
   Web of Science ®Google Scholar
• Frank G, Kostlin H: ‘Electrical properties and defect model of tin-doped indium oxide layers’, Appl. Phys. A, 1982, 27A, 197–206.
   Web of Science ®Google Scholar
• Sasaki K, Seifert HP, Gauckler LJ: ‘Electric conductivity of In2O3 solid solutions with ZrO2’, J. Electrochem. Soc., 1994, 141, (10), 2759–2768.
   Web of Science ®Google Scholar
• Cox PA, Flavell WR, Egdell RG: ‘Solid-state and surface chemistry of Sn-doped In2O3 ceramics’, J. Solid State Chem., 1987, 68, 340–350.
   Web of Science ®Google Scholar
• Gehman BL, Jonsson S, Rudolph T, Scherer M, Weigert M, Werner R: ‘Influence of manufacturing process of indium tin oxide sputtering targets on sputtering behavior’, Thin Solid Films, 1992, 220, 333–336.
   Web of Science ®Google Scholar
• Yoshimura R, Ogawa N, Iwamoto T, et al..: ‘Studies on characteristics of ITO target materials’, Tosoh SMD, Japan technical note TKN 2·003A.
   Google Scholar
• Ishibashi S, Higuchi Y, Ota Y, Nakamura K: ‘Low resistivity indium-tin oxide transparent conductive films. II. Effect of sputtering voltage on electrical property of films’, J. Vac. Sci. Technol. A, 1990, 8A, (3), 1403–1406.
   Web of Science ®Google Scholar
• Lippens P, Segers A, Haemers J, de Gryse R: ‘Chemical instability of the target surface during DC-magnetron sputtering of ITO-coatings’, Thin Solid Films, 1998, 317, 405–408.
   Web of Science ®Google Scholar
• Omata T, Kita M, Okada H, Otsuka S, Matsuo Y, Ono N, Ikawa H: ‘Characterization of indium-tin oxide sputtering targets showing various densities of nodule formation’, Thin Solid Films, 2006, 503, 22–28.
   Web of Science ®Google Scholar
• Lewis BG, Mohanty R, Paine DC: ‘Structure and performance of ITO sputtering targets’, Proc. 37th Annual Technical Conf., Boston, MA, USA, May 1994, Society of Vacuum Coaters, 432–439.
   Google Scholar
• Stuwart ADG, Thompson MW: ‘Microphotography of surfaces eroded by ion bombardment’, J. Mater. Sci., 1969, 4, 56–60.
   Web of Science ®Google Scholar
• Nakashima K, Kumahara Y: ‘Effect of tin oxide dispersion on nodule formation in ITO sputtering’, Vacuum, 2002, 66, 221–226.
   Web of Science ®Google Scholar
• Zhang W, Zhu G, Zhi L, Yang H, Yang Z, Yu A, Xu H: ‘Structural, electrical and optical properties of indium tin oxide thin films prepared by RF sputtering using different density ceramic targets’, Vacuum, 2012, 86, 1045–1047.
   Web of Science ®Google Scholar
• de Wit JHW: ‘The high temperature behavior of In2O3’, J. Solid State Chem., 1975, 13, 192–200.
   Web of Science ®Google Scholar
• de Wit JHW, Laheij M, Elbers PE: ‘Grain growth and sintering of In2O3’, J. Solid State Chem., 1975, 13, 143–150.
   Web of Science ®Google Scholar
• Lamoreaux RH, Hidenbrand DL, Brewer L: ‘High-temperature vaporization behavior of oxides II. Oxides of Be, Mg, Ca, Sr, Ba, B, Al, Ga, In, Tl, Si, Ge, Sn, Pb, Zn, Cd, and Hg’, J. Phys. Chem. Ref. Data, 1987, 16, (3), 419–443.
   Web of Science ®Google Scholar
• Medvedovski E, Alvarez NA, Yankov O, Olsson MK: ‘Advanced indium-tin oxide ceramics for sputtering targets’, Ceram. Int., 2007, 34, 1173–1182.
   Web of Science ®Google Scholar
• De Bosscher W, Dellaert K, Luys S, Lacres A: ‘ITO coating of glass for LCDs’, Inf. Display, 2005, 21, (5), 12–15.
   Google Scholar
• de Bosscher W, Delrue H, van Holsbeke J, Matthews SJ, Blondeel A: ‘Rotating cylindrical ITO targets for large area coating’, Bull. Soc. Vac. Coaters, 2005, 48, 111–115.
   Google Scholar
• Medvedovski E, Szepesi CJ, Yankov O, Olsson MK: ‘Rotary ITO ceramic sputtering targets for transparent conductive thin films coating’, Am. Ceram. Soc. Bull., 2008, 87, (2), 39–42.
   Web of Science ®Google Scholar
• Medvedovski E, Szepesi CJ: ‘Ultrasonic non-destructive testing of ceramic sputtering targets’, Ceram. Eng. Sci. Proc., 2009, 30, (8), 101–111.
   Google Scholar
• Son J.-W, Kim D.-Y: ‘Enhanced densification of In2O3 ceramics by presintering with low pressure (5 MPa)’, J. Am. Ceram. Soc., 1998, 81, (9), 2489–2492.
   Web of Science ®Google Scholar
• Kim B.-C, Kim S.-M, Lee J.-H, Kim JJ: ‘Effect of phase transformation on the densification of coprecipitated nanocrystalline indium tin oxide powders’, J. Am. Ceram. Soc., 2002, 85, (8), 2083–2088.
   Web of Science ®Google Scholar
• Lange FF: ‘Sinterability of agglomerated powders’, J. Am. Ceram. Soc., 1984, 67, (2), 83–89.
   Web of Science ®Google Scholar
• Zhao J, Harmer MP: ‘Effect of pore distribution on microstructure development: I, matrix pores’, J. Am. Ceram. Soc., 1988, 71, (2), 113–120.
   Web of Science ®Google Scholar
• Zhao J, Harmer MP: ‘Effect of pore distribution on microstructure development: II, first and second generation pores’, J. Am. Ceram. Soc., 1988, 71, (7), 530–539.
   Web of Science ®Google Scholar
• Rahaman MN: ‘Ceramic processing and sintering’; 2007, Boca Raton, FL, CRC Taylor & Francis.
   Google Scholar
• Kim B.-C, Lee J.-H, Kim J.-J, Ikegami T: ‘Rapid rate sintering of nanocrystalline indium tin oxide ceramics: particle size effect’, Mater. Lett., 2002, 52, 114–119.
   Web of Science ®Google Scholar
• Kim B.-C, Lee J.-H, Kim J.-J, Lee HY, Lee J.-S: ‘Densification of nanocrystalline ITO powders in fast firing: effect of specimen mass and sintering atmosphere’, Mater. Res. Bull., 2005, 40, 395–404.
   Web of Science ®Google Scholar
• Bates JL, Griffin CW, Marchant DD, Garnier JE: ‘Electrical conductivity, seebeck coefficient and structure of In2O3–SnO2’, Am. Ceram. Soc. Bull., 1986, 65, (4), 673–678.
   Web of Science ®Google Scholar
• Nadaud N, Lequeux N, Nanot M, Jové J, Roisnel T: ‘Structural studies of tin-doped indium oxide (ITO) and In4Sn3O12’, J. Solid State Chem., 1998, 135, 140–148.
   Web of Science ®Google Scholar
• Vojnovich T, Bratton RJ: ‘Impurity effects on sintering and electrical resistivity of indium oxide’, Am. Ceram. Soc. Bull., 1975, 54, (2), 216–217.
   Web of Science ®Google Scholar
• Heward WJ, Swenson DJ: ‘Phase equilibria in the pseudo-binary In2O3–SnO2 system’, J. Mater. Sci., 2007, 42, 7135–7140.
   Web of Science ®Google Scholar
• Kim S.-M, Seo KH, Lee J.-H, Kim JJ, Lee HY, Lee JS: ‘Preparation and sintering of nanocrystalline ITO powders with different SnO2 content’, J. Eur. Ceram. Soc., 2006, 26, 73–80.
   Web of Science ®Google Scholar
• Tang S, Yao J, Chen J, Luo J: ‘Preparation of indium tin oxide (ITO) with a single-phase structure’, J. Mater. Proc. Technol., 2003, 137, 82–85.
   Web of Science ®Google Scholar
• Kamei M, Shigesato Y, Takaki S: ‘Origin of characteristic grain–subgrain structure of tin-doped indium oxide films’, Thin Solid Films, 1995, 259, (1), 38–45.
   Web of Science ®Google Scholar
• Latz R, Michael K, Scherer M: ‘High conducting large area indium tin oxide electrodes for displays prepared by DC magnetron sputtering’, Jpn J. Appl. Phys., 1991, 30, (2A), L.149–L.151.
   Web of Science ®Google Scholar
• Song PK, Akao H, Kamei M, Shigesato Y: ‘Preparation and crystallization of tin-doped and undoped amorphous indium oxide films deposited by sputtering’, Jpn J. Appl. Phys., 1999, 38, (9A), 5224–5226.
   Web of Science ®Google Scholar
• Guillen C, Herrero J: ‘Polycrystalline growth and recrystallization process in sputtered ITO thin films’, Thin Solid Films, 2006, 510, (1–2), 260–264.
   Web of Science ®Google Scholar
• Betz U, Olsson MK, Marthy J, Escolb MF, Atamny F: ‘Thin films engineering of indium tin oxide: large area flat panel displays application’, Surf. Coat. Technol., 2006, 200, (20–21), 5751–5759.
   Web of Science ®Google Scholar
• Gheidari AM, Behafarid F, Kavei G, Kazemzad M: ‘Effect of sputtering pressure and annealing temperature on the properties of indium tin oxide thin films’, Mater. Sci. Eng. B, 2007, B136, 37–40.
   Web of Science ®Google Scholar
• Trejo-Cruz C, Mendoza-Galvan A, Lopez-Beltran AM, Gracia-Jimenez M: ‘Effects of air annealing on the optical, electrical and structural properties of indium-tin oxide thin films’, Thin Solid Films, 2009, 517, (6), 4615–4620.
   Web of Science ®Google Scholar
• Medvedovski E, Szepesi CJ, Lippens P, Leitner K, Linsbod R, Hellmich A, Krock W: ‘ITO thin film coatings obtained from developed ceramic rotary sputtering targets’, in ‘Advanced processing and manufacturing technologies for structural and multifunctional materials III’, (ed. T. Ohji and M. Singh), Vol. 30, (8), 93–99; 2009, New York, Wiley.
   Google Scholar