https://orcid.org/0000-0002-9759-9253
Figures & data
Figure 1. (a) Fabrication process of SCD MEMS resonators through the ion implantation-assisted lift-off (IAL) method. (b) Laser optical image of SCD MEMS resonators with different lengths, ranging from 50 to 160 μm. (c) Optical image of a 140 μm-length SCD cantilever with the electrical actuation configuration.
Figure 2. (a) Schematic diagram of measurement setup of resonance vibration of SCD MEMS resonator. The electrode on the SCD resonator is grounded and the electrode on the SCD substrate connected to an RF signal is utilized to actuate the movement of resonator. (b) Distribution of the potential around the suspended SCD resonator stimulated by the finite element analysis. The applied voltage on the electrode is set as 1 V. (c) Dependence of electric field on the distance between the top surface of the resonator and the center of the electrode.
Figure 3. (a) Resonance spectrum of a SCD MEMS resonator (L = 140 μm) vs the actuation voltage at room temperature. (b) Resonance frequency and (c) peak amplitude as a function of the actuation voltage. (c) Dependences of resonance frequencies on (d) length, L and (c) L−2 of SCD cantilevers.
Figure 4. (a) Resonance spectrum shifts of a SCD MEMS resonator (L = 140 μm) as a function of the measurement temperature at the actuation voltage of 1 V. (b) Peak amplitudes of resonance spectra vs the actuation voltages at various temperatures. (c) Dependences of resonance frequencies on the actuation voltages at various temperatures. (d) Variations in the temperature coefficient of resonance frequency (TCF) with the temperatures under different actuation voltages. The inset is the correlation between resonance frequencies and the actuation voltages at various temperatures. (e) Q factors vs the actuation voltages at various temperatures. (f) Q factors as a function of the temperatures at various actuation voltages.
