Spatially controlled two-dimensional quantum heterostructures

Abstract

Two-dimensional (2D) heterostructures have recently attracted interest as candidate materials for classical optoelectronics and in quantum information technology. Despite significant research, realizing deterministic, in-plane quantum confinement in synthetic 2D heterostructures at the nanoscale remains challenging. In this brief overview, we summarize recent advances in approaches for the growth of spatially controllable 2D quantum heterostructures. These growth methods enable the achievement of various 2D lateral/vertical heterostructures with controlled positions and dimensions while minimizing defects across the heterointerfaces. In addition, we provide an outlook on the future direction of developments and applications of 2D quantum-confined heterostructures.

GRAPHICAL ABSTRACT

IMPACT STATEMENT

Two-dimensional (2D) heterostructures have been investigated for optoelectronics and quantum engineering. This review provides critical analysis and perspective into the realization of spatially controlled 2D quantum heterostructures and their applications.

KEYWORDS:

• 2D materials
• low dimensional materials
• heterostructures
• epitaxial growth
• chemical vapor deposition

Acknowledgments

D.J. and G.K. acknowledge primary support for this work by the Asian Office of Aerospace Research and Development (AOARD) of the Air Force Office of Scientific Research (AFOSR) FA2386-20-1-4074 and FA2386-21-1-4063. S.S acknowledges support for this work by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (grant number 2021R1A6A3A14038492).

Disclosure statement

No potential conflict of interest was reported by the author(s).

Additional information

Funding

This work was supported by the Asian Office of Aerospace Research and Development (AOARD) of the  Air Force Office of Scientific Research (AFOSR): [Grant Number FA2386-21-1-4063 and FA2386-20-1-4074]; National Research Foundation of Korea: [Grant Number 2021R1A6A3A14038492].