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Ferroelectrics Volume 93, 1989 - Issue 1
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Thin films

Switching kinetics of lead zirconate titanate sub-micron thin-film memories

J. F. Scott Symetrix Corporation, P.O. Box 49164, Colorado Springs, CO, 80949; Dept. Physics, Univ. Colo., Boulder, CO, 80309-0390
,
L. D. McMillan Symetrix Corporation, P.O. Box 49164, Colorado Springs, CO, 80949
&
C. A. Araujo Symetrix Corporation, P.O. Box 49164, Colorado Springs, CO, 80949; Dept. Elec. Engineering, Univ. Colo., Colo. Springs, CO, 80933
Pages 31-36 | Received 08 Sep 1988, Published online: 10 Feb 2011

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LAURENT BAUDRY. (2007) FERROELECTRICS SEMICONDUCTORS THIN FILMS SWITCHING PROPERTIES: A TIME DEPENDENT LANDAU DEVONSHIRE APPROACH. Integrated Ferroelectrics 95:1, pages 205-213.
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LAURENT BAUDRY. (2007) A THEORETICAL STUDY OF THE INFLUENCE OF THE ELECTRIC FIELD AND POLARIZATION DISTRIBUTIONS ON FERROELECTRIC THIN FILMS SWITCHING PROPERTIES. Integrated Ferroelectrics 91:1, pages 10-22.
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L. Baudry. (2006) Surface Polarization Enhancement and Switching Properties of Small Ferroelectric Particles. Ferroelectrics 333:1, pages 27-39.
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CHUL-HO PARK, YOUNG-HUN OH, MI-SOOK WON & YOUNG-GOOK SON. (2005) FERROELECTRIC PROPERTIES OF PZT/TiO2 STRUCTURE ACCORDING TO THE DEPOSITION CONDITION OF TiO2 INTERLAYER. Integrated Ferroelectrics 75:1, pages 131-137.
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AlanD. Devilbiss & AlanJ. Devilbiss. (1999) Electrical measurements of the high speed switching characteristics of micron-scale discrete ferroelectric capacitors. Integrated Ferroelectrics 26:1-4, pages 285-295.
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Z. Surowiak, D. Czekaj, A.A. Bakirov & V.P. Dudkevich. (1999) Influence of conditions of r.f. sputtering on chemical constitution and structure of PZT-type thin films. Integrated Ferroelectrics 23:1-4, pages 229-257.
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N.I. Lebedev & A.S. Sigov. (1994) Surface inhomogeneities and coercive field of thin ferroelectric films. Integrated Ferroelectrics 4:1, pages 21-24.
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A.K. Tagantsev, Cz. Pawlaczyk, K. Brooks & N. Setter. (1994) Built-in electric field assisted nucleation and coercive fields in ferroelectric thin films. Integrated Ferroelectrics 4:1, pages 1-12.
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LawrenceT. Clark, Terje Gloerstad, RobertO. Grondin & SandwipK. Dey. (1993) Measurement and simulation of partial switching in ferroelectric PZT thin-films. Integrated Ferroelectrics 3:4, pages 309-320.
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Yuhuan Xu & JohnD Mackenzie. (1992) Ferroelectric thin films prepared by sol-gel processing. Integrated Ferroelectrics 1:1, pages 17-42.
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Sanju Gupta. (2022) Phase transformation and growth mechanism of RF sputtered ferroelectric lead scandium tantalate (PbSc 0.5 Ta 0.5 O 3 ) films . Journal of the American Ceramic Society 106:4, pages 2209-2224.
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Xiaochen Fang, Rongwei Hu, Yazhong Wang, Fei‐Ting Huang & Sang‐Wook Cheong. (2021) Hybrid Improper Ferroelectricity in Highly Cleavable Single Crystals of Dion‐Jacobson‐Compound CsBiNb 2 O 7 . Advanced Electronic Materials 8:6.
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D. A. Abdullaev, R. A. Milovanov, R. L. Volkov, N. I. Borgardt, A. N. Lantsev, K. A. Vorotilov & A. S. Sigov. (2020) Ferroelectric memory: state-of-the-art manufacturing and research. Russian Technological Journal 8:5, pages 44-67.
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Muhammad A. Alam, Mengwei Si & Peide D. Ye. (2019) A critical review of recent progress on negative capacitance field-effect transistors. Applied Physics Letters 114:9.
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Antonio Leondino Bacichetti Junior, Manuel Henrique Lente, Ricardo Gonçalves Mendes, Pedro Iris Paulin Filho & José Antonio Eiras. (2004) Influence of the crystallization thermal treatment on the structural and electrical properties of PZT thin films. Materials Research 7:2, pages 363-367.
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S. Prasertchoung, V. Nagarajan, Z. Ma, R. Ramesh, J. S. Cross & M. Tsukada. (2004) Polarization switching of submicron ferroelectric capacitors using an atomic force microscope. Applied Physics Letters 84:16, pages 3130-3132.
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Aya Seike, Kazushi Amanuma, Sota Kobayashi, Toru Tatsumi, Hiroki Koike & Hiromitsu Hada. (2000) Polarization reversal kinetics of a lead zirconate titanate thin-film capacitor for nonvolatile memory. Journal of Applied Physics 88:6, pages 3445-3447.
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M. H. Lente, J. M. Póvoa & J. A. Eiras. (2000) O processo de polarização em cerâmicas de PZT. Cerâmica 46:298, pages 61-66.
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S. Bhattacharyya, S. S. N. Bharadwaja & S. B. Krupanidhi. (2000) Alternating current conduction behavior of excimer laser ablated SrBi[sub 2]Nb[sub 2]O[sub 9] thin films. Journal of Applied Physics 88:7, pages 4294.
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Hung-Ming Yang, Jian-Shing Luo & Wen-Tai Lin. (2011) In situ Growth of Fatigue-free SrBi 2 Ta 2 O 9 Films by Pulsed Laser Ablation . Journal of Materials Research 12:4, pages 1145-1151.
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L.M. Blinov, V.M. Fridkin, S.P. Palto, A.V. Sorokin & S.G. Yudin. (1996) Thickness dependence of switching for ferroelectric Langmuir films. Thin Solid Films 284-285, pages 474-476.
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A. K. Tagantsev, M. Landivar, E. Colla & N. Setter. (1995) Identification of passive layer in ferroelectric thin films from their switching parameters. Journal of Applied Physics 78:4, pages 2623-2630.
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A. K. Tagantsev, M. Landivar, E. Colla, K. G. Brooks & N. Setter. 1995. Science and Technology of Electroceramic Thin Films. Science and Technology of Electroceramic Thin Films 301 314 .
P. K. Larsen, G. J. M. Dormans, D. J. Taylor & P. J. van Veldhoven. (1994) Ferroelectric properties and fatigue of PbZr0.51Ti0.49O3 thin films of varying thickness: Blocking layer model. Journal of Applied Physics 76:4, pages 2405-2413.
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P. Arafin & I. Guy. (1994) Switching transients in an ultrathin ferroelectric copolymer film. Switching transients in an ultrathin ferroelectric copolymer film.
G. A. C. M. Spierings, M. J. E. Ulenaers, G. L. M. Kampschöer, H. A. M. van Hal & P. K. Larsen. (1991) Preparation and ferroelectric properties of PbZr0.53Ti0.47O3 thin films by spin coating and metalorganic decomposition. Journal of Applied Physics 70:4, pages 2290-2298.
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Yuhuan Xu. 1991. Ferroelectric Materials and their Applications. Ferroelectric Materials and their Applications 163 215 .
K. Ramkumar, J. Lee, A. Safari & S.C. Danforth. (2011) Ferroelectric Thin Films Deposited by Laser Ablation. MRS Proceedings 200.
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James F. Scott & Carlos A. Paz de Araujo. (1989) Ferroelectric Memories. Science 246:4936, pages 1400-1405.
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