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Philosophical Magazine A Volume 37, 1978 - Issue 1
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Original Articles

Implantation-induced strains in silicon studied by X-ray interferometry and topography

L. Gerward Laboratory of Applied Physics III, Building 307, Technical University of Denmark, DK-2800, Lyngby, Denmark
Pages 95-106 | Received 31 Aug 1977, Published online: 27 Sep 2006

Citations (11)

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Read on this site (3)

P.J. Burnett & T.F. Page. (1986) Criteria for mechanical property modifications of ceramic surfaces by ion implantation. Radiation Effects 97:3-4, pages 283-296.
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A. Gras-marti, J.J. Jimenez-rodriguez, J. Peon-fernandez & M. Rodriguez-vidal. (1982) On the influence of atomic mixing on the evolution of ion-implantation profiles. Philosophical Magazine A 45:1, pages 191-203.
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E. Zlelińska-rohozińska & L. Gerward. (1980) High-dose argon implantation in silicon studied by X-ray topography. Philosophical Magazine A 41:3, pages 321-330.
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Articles from other publishers (8)

Guilherme A. Calligaris, Rossano Lang, Jefferson Bettini, Adenilson O. dos Santos & Lisandro P. Cardoso. (2024) Xenon Nanobubbles and Residual Defects in Annealed Xe‐Implanted Si(001): Analysis by the Combination of Advanced Synchrotron X‐Ray Diffraction and Transmission Electron Microscopy Techniques. Advanced Materials Technologies.
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Michael L. Manda, M. L. Shepard, R. B. Fair & H. Z. Massoud. (2011) Stress-Assisted Diffusion of Boron and Arsenic in Silicon. MRS Proceedings 36.
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W. Gehlhoff & K. H. Segsa. (2006) Determination of Stresses in SiSiO 2 and Mechanically Affected Si by EPR . physica status solidi (b) 118:2, pages 703-712.
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I. S. Vassilev, Z. Furmanik, I. N. Petrov, P. A. Botev & J. Auleytner. (2006) X‐Ray topographic study of the influence of thermal annealing on the bending of 49 BF 2 + ‐implanted Si wafers . Crystal Research and Technology 17:9, pages 1167-1175.
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RICHARD B. FAIR. 1981. Impurity Doping Processes in Silicon. Impurity Doping Processes in Silicon 315 442 .
Z. Rek. (1980) X-ray studies of boron implanted germanium single crystals. Physica Status Solidi (a) 61:2, pages 693-700.
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O. Alstrup. (1979) Investigation of radiation damage in ion implanted silicon crystals by pendellösung topography. Physica Status Solidi (a) 51:2, pages 407-418.
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Richard B. Fair. (1979) The effect of strain-induced band-gap narrowing on high concentration phosphorus diffusion in silicon. Journal of Applied Physics 50:2, pages 860-868.
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