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Philosophical Magazine A Volume 48, 1983 - Issue 1
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Original Articles

Dark-field electron microscopy of dissociated dislocations and surface steps in silicon using forbidden reflections

A. Ourmazd Department of Metallurgy and Science of Materials, University of Oxford, Parks Road, Oxford, 0X1 3PH, England1; Department of Electronics, The University, Southampton, S09 5NH, England
,
G. R. Anstis Department of Metallurgy and Science of Materials, University of Oxford, Parks Road, Oxford, 0X1 3PH, England1
&
P. B. Hirsch Department of Metallurgy and Science of Materials, University of Oxford, Parks Road, Oxford, 0X1 3PH, England1
Pages 139-153 | Received 19 Aug 1982, Accepted 26 Jan 1983, Published online: 13 Sep 2006

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D. Cherns, I.K. Jordan & R. Vincent. (1988) Convergent-beam electron diffraction from AlGaAs/GaAs single quantum wells. Philosophical Magazine Letters 58:1, pages 45-51.
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C.T. Chou, P.M. Hazzledine, P.B. Hirsch & G.R. Anstis. (1987) Formation of antiphase-domain boundary tubes in B2 ordered alloys by cross-slip and annihilation of screw dislocations. Philosophical Magazine A 56:6, pages 799-813.
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H. Alexander, J.c. H. Spence, D. Shindo, H. Gottschalk & N. Long. (1986) Forbidden-reflection lattice imaging for the determination of kink densities on partial dislocations. Philosophical Magazine A 53:5, pages 627-643.
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Y. Lereah & E. Grünbaum. (1984) On the origin of the additional electron diffraction spots from epitaxial (111) Si single-crystal films. Philosophical Magazine A 50:1, pages 1-7.
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Articles from other publishers (25)

Qi Zheng, Xian Shi, Jinyang Jiang, Haiyan Mao, Nicholas Montes, Nikolaos Kateris, Jeffrey A. Reimer, Hai Wang & Haimei Zheng. (2023) Unveiling the complexity of nanodiamond structures. Proceedings of the National Academy of Sciences 120:23.
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Filippo Fabbri, Enzo Rotunno, Laura Lazzarini, Daniela Cavalcoli, Antonio Castaldini, Naoki Fukata, Keisuke Sato, Giancarlo Salviati & Anna Cavallini. (2013) Preparing the Way for Doping Wurtzite Silicon Nanowires while Retaining the Phase. Nano Letters 13:12, pages 5900-5906.
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John C.H. Spence. 2007. 419 452 .
H. Alexander, H. R. Kolar & J. C. H. Spence. (1999) Kinks on Partials of 60° Dislocations in Silicon as Revealed by a Novel TEM Technique. physica status solidi (a) 171:1, pages 5-16.
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J.C.H. Spence. (1997) Imaging moving dislocation kinks and buried interfaces by HREM. Ultramicroscopy 67:1-4, pages 171-180.
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Daniel P. Abraham & Carl J. Altstetter. (1995) Hydrogen-enhanced localization of plasticity in an austenitic stainless steel. Metallurgical and Materials Transactions A 26:11, pages 2859-2871.
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Frances M. Ross, J.Murray Gibson & Ray D. Twesten. (1994) Dynamic observations of interface motion during the oxidation of silicon. Surface Science 310:1-3, pages 243-266.
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H.Z. Xiao & A.C. Daykin. (1994) Extra diffractions caused by stacking faults in cubic crystals. Ultramicroscopy 53:4, pages 325-331.
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A. Ourmazd & A. Ourmazd. (1993) Chemical mapping and its application to interfaces, point defects and materials processing. Materials Science Reports 9:6, pages 201-250.
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Frances M. Ross & J. Murray Gibson. (1992) Dynamic observations of interface propagation during silicon oxidation. Physical Review Letters 68:11, pages 1782-1785.
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F. K. LeGoues, M. Horn-Von Hoegen, M. Copel & R. M. Tromp. (1991) Strain-relief mechanism in surfactant-grown epitaxial germanium films on Si(111). Physical Review B 44:23, pages 12894-12902.
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A. Ourmazd, F.H. Baumann, M. Bode & Y. Kim. (1990) Quantitative chemical lattice imaging: theory and practice. Ultramicroscopy 34:4, pages 237-255.
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J. M. Gibson, M. Y. Lanzerotti & V. Elser. (1989) Plan-view transmission electron diffraction measurement of roughness at buried Si/SiO2 interfaces. Applied Physics Letters 55:14, pages 1394-1396.
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J.M. Gibson & M.Y. Lanzerotti. (1989) Silicon oxidation studied by in-situ tem. Ultramicroscopy 31:1, pages 29-35.
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J. M. Gibson & M. Y. Lanzerotti. (1989) Observation of interfacial atomic steps during silicon oxidation. Nature 340:6229, pages 128-131.
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J. M. Gibson & M. Y. Lanzerotti. (2011) A Novel Method for Study of Roughness at Buried Interfaces by Plan View Tem: Si/SiO 2 . MRS Proceedings 148.
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J.M. Gibson & M. Y. Lanzerotti. (2011) In-Situ Studies of Silicon Oxidation. MRS Proceedings 139.
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J. M. Gibson, J. L. Batstone & M. Y. Lanzerotti. 1990. Evaluation of Advanced Semiconductor Materials by Electron Microscopy. Evaluation of Advanced Semiconductor Materials by Electron Microscopy 295 304 .
M. Yata, A. Toda, H. Nagatsuyu, T. Hariu, T. Nakada, K. Tsukui & T. Osaka. (1988) Ultrahigh vacuum i n   s i t u transmission electron microscopy observations of molecular-beam epitaxially grown InSb(111) . Journal of Applied Physics 63:12, pages 5751-5755.
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D. CHERNS. 1988. 297 335 .
A. Howie. 1989. Surface and Interface Characterization by Electron Optical Methods. Surface and Interface Characterization by Electron Optical Methods 1 9 .
B. C. De Cooman, K.-H. Kuesters & C. B. Carter. (2011) The Core Structure of Dislocations in GaAs. MRS Proceedings 62.
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C.J. Rossouw, S.E. Donnelly & D.F. Lynch. (1985) Atomic step contrast from forbidden reflections. Ultramicroscopy 16:1, pages 41-46.
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Karen J. Morrissey, Karel K. Czanderna, C. B. Carter & Robert P. Merrill. (2006) Growth of α‐Al 2 O 3 Within a Transition Alumina Matrix . Journal of the American Ceramic Society 67:5.
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D.B. Williams & D.E. Newbury. 1984. Advances in Electronics and Electron Physics Volume 62. Advances in Electronics and Electron Physics Volume 62 161 288 .

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