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Abstract
The origin of additional electron diffraction spots from epitaxial (111) Si single crystal films grown on CaF2 has been investigated. They have been found to arise from small particles containing a high density of stacking faults. These particles can be treated as an h.c.p. phase related to the matrix with (0001) hexagonal ∥ (111) cubic and [1010] hexagonal ∥ [121] cubic.