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Philosophical Magazine A Volume 50, 1984 - Issue 1
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Original Articles

On the origin of the additional electron diffraction spots from epitaxial (111) Si single-crystal films

Y. Lereah Department of Electronic Devices and Materials, Faculty of Engineering, Tel-Aviv University, Ramat-Aviv, Tel-Aviv, 69978, Israel
&
E. Grünbaum Department of Electronic Devices and Materials, Faculty of Engineering, Tel-Aviv University, Ramat-Aviv, Tel-Aviv, 69978, Israel
Pages 1-7 | Received 15 Nov 1982, Accepted 11 Nov 1983, Published online: 04 Oct 2006

Citations (6)

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Read on this site (1)

P. B. Hirsch. (1985) Dislocations in semiconductors. Materials Science and Technology 1:9, pages 666-677.
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Articles from other publishers (5)

L. Houben, M. Luysberg & R. Carius. (2003) Microtwinning in microcrystalline silicon and its effect on grain-size measurements. Physical Review B 67:4.
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Hans Cerva. (2011) High-resolution electron microscopy of diamond hexagonal silicon in low pressure chemical vapor deposited polycrystalline silicon. Journal of Materials Research 6:11, pages 2324-2336.
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M. José-Yacamán, R. Herrera, A. Gómez, S. Tehuacanero & P. Schabes-Retchkiman. (1990) Decagonal and hexagonal structures in small gold particles. Surface Science 237:1-3, pages 248-256.
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M. Barkai, Y. Lereah, E. Grünbaum & G. Deutscher. (1986) Epitaxial growth of silicon and germanium films on CaF2/Si. Thin Solid Films 139:3, pages 287-297.
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H. Bender, A. Veirman, J. Landuyt & S. Amelinckx. (1986) HREM investigation of twinning in very high dose phosphorus ion-implanted silicon. Applied Physics A Solids and Surfaces 39:2, pages 83-90.
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