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IETE Journal of Research Volume 31, 1985 - Issue 1
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Original Articles

Effect of Impurity Charge Bumps on the DC and Microwave Properties of High Efficiency Silicon Double Drift Impatt Diodes

S.P. PatiCentre of Advanced Study in Radiophysics & Electronics, University of Calcutta, 1, Girish Vidyaratna Lane, Calcutta700 009View further author information
,
J.P. BanerjeeCentre of Advanced Study in Radiophysics & Electronics, University of Calcutta, 1, Girish Vidyaratna Lane, Calcutta700 009View further author information
&
S.K. RoyCentre of Advanced Study in Radiophysics & Electronics, University of Calcutta, 1, Girish Vidyaratna Lane, Calcutta700 009View further author information
Pages 22-27 | Received 06 Jan 1984, Published online: 02 Jun 2015

Citations (3)

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Read on this site (2)

J. Banerjee & M. Mitra. (2022) Effect of Charge Bump Position Shifting on Negative Resistance and Noise Performance of Lo–Hi–Lo IMPATT. IETE Journal of Research 68:4, pages 2422-2432.
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A K Panda & S P Pati. (1998) Optimization of Ion Implanted Low-High-Low Impurity Profile for Silicon n+pp+ SDR Diode. IETE Technical Review 15:1-2, pages 77-82.
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Articles from other publishers (1)

S P Pati. (1992) Compensation of microwave properties of silicon double-drift Read diode for high bias current operation. Semiconductor Science and Technology 7:3, pages 352-356.
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