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Integrated Ferroelectrics
An International Journal
Volume 4, 1994 - Issue 1
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Original Articles

Negative differential resistivity in ferroelectric thin-film current-voltage relationships

J. F. Scott Symetrix Corporation, Colorado Springs, CO, USA; University of Colorado, Depts. of Physics and of Electrical Engineering, Boulder and Colorado Springs, CO, USA
,
B. M. Melnick Symetrix Corporation, Colorado Springs, CO, USA; University of Colorado, Depts. of Physics and of Electrical Engineering, Boulder and Colorado Springs, CO, USA
,
J. D. Cuchiaro Symetrix Corporation, Colorado Springs, CO, USA; University of Colorado, Depts. of Physics and of Electrical Engineering, Boulder and Colorado Springs, CO, USA
,
R. Zuleeg Symetrix Corporation, Colorado Springs, CO, USA; University of Colorado, Depts. of Physics and of Electrical Engineering, Boulder and Colorado Springs, CO, USA
,
C. A. Araujo Symetrix Corporation, Colorado Springs, CO, USA; University of Colorado, Depts. of Physics and of Electrical Engineering, Boulder and Colorado Springs, CO, USA
,
L. D. McMillan Symetrix Corporation, Colorado Springs, CO, USA; University of Colorado, Depts. of Physics and of Electrical Engineering, Boulder and Colorado Springs, CO, USA
&
M. C. Scott Symetrix Corporation, Colorado Springs, CO, USA; University of Colorado, Depts. of Physics and of Electrical Engineering, Boulder and Colorado Springs, CO, USA
 show all
Pages 85-92 | Received 15 Sep 1992, Accepted 14 Dec 1992, Published online: 11 Oct 2011

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Read on this site (14)

Yu. Podgorny, K. Vorotilov, P. Lavrov & A. Sigov. (2016) Leakage currents in porous PZT films. Ferroelectrics 503:1, pages 77-84.
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Yu. Podgorny, A. Sigov, A. Vishnevskiy & K. Vorotilov. (2014) Simulation of Negative Differential Resistivity in Thin Ferroelectric Films. Ferroelectrics 465:1, pages 28-35.
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Prikshit Gautam, S. Bhattacharyya, SushilK. Singh & R.P. Tandon. (2010) Fabrication and Characterization of Bismuth Lanthanum Titanate (Bi3.25La0.75Ti3O12) Thin Films for FeRAM Devices. Integrated Ferroelectrics 122:1, pages 63-73.
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A.V. SOLNYSHKIN, A.S. TROSHKIN, A.A. BOGOMOLOV, I.P. RAEVSKI, D.N. SANDJIEV & V.YU. SHONOV. (2009) CURRENT-VOLTAGE CHARACTERISTICS AND PHOTOSTIMULATED CONDUCTIVITY IN FERROELECTRIC HETEROGENEOUS STRUCTURE Al/Sn2P2S6/Al. Integrated Ferroelectrics 106:1, pages 61-69.
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Harald Bachhofer, Hans Reisinger, Herbert Schroeder, Thomas Haneder, Christine Dehm, Henning Von Philipsborn & Rainer Waser. (2001) Relaxation effects and steady-state conduction in non-stoichiometric SBT films. Integrated Ferroelectrics 33:1-4, pages 245-252.
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C.E. Zybill, E. Hechtl, D. Kovalev & W. Eckstein. (2000) Improvement of loss factor tan δ of PZT PbTi0.75Zr0.25O3 films by O+-Ion-implantation. Integrated Ferroelectrics 29:3-4, pages 283-290.
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Chee Won Chung, Tae-Young Kim & Ilsub Chung. (1999) Investigation of preannealing method for preparation of robust SrBi2Ta2O9 thin films by chemical solution deposition. Integrated Ferroelectrics 27:1-4, pages 61-69.
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I. Stolichnov & A. Tagantsev. (1999) Physical origin of conduction in PZT thin films. Ferroelectrics 225:1, pages 147-154.
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Koji Watanabe, AndreasJ. Hartmann, RobertN. Lamb & JamesF. Scott. (1998) A comparison of Schottky-limited and space-charge-limited currents in SrBi2Ta2O9 thin films. Integrated Ferroelectrics 21:1-4, pages 241-249.
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Marin Alexe, JamesF. Scott, Alain Pignolet, Dietrich Hesse & Ulrich Gösele. (1998) Pb(Zr,Ti)O3-silicon heterostructures fabricated by direct wafer bonding. Integrated Ferroelectrics 19:1-4, pages 95-109.
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J.F. Scott. (1998) Dielectric breakdown, negative resistivity, depletion widths and the role of Bi in strontium bismuth tantalate (SBT) devices. Integrated Ferroelectrics 19:1-4, pages 85-93.
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J.F. Scott. (1998) Future issues in ferroelectric miniaturization. Ferroelectrics 206:1, pages 365-379.
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A.K. Tagantsev, A.L. Kholkin, E.L. Colla, K.G. Brooks & N. Setter. (1995) Effect of ferroelectric polarization on current response of PZT thin films. Integrated Ferroelectrics 10:1-4, pages 189-204.
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W. Zhu, Z.Q. Liu, M.S. Tse, W. Lu & H.S. Tan. (1995) La doped PZT 60/40 films by MOD technology. Integrated Ferroelectrics 9:1-3, pages 95-104.
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Punya Mainali, Phadindra Wagle, Nishan Khatri, Chasen McPherson, Kaan Kalkan & D.N. McIlroy. (2023) Humidity induced resistive switching and negative differential resistance in α-Fe2O3 porous thin films. Sensors and Actuators A: Physical 362, pages 114631.
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Yuan Wang, Lei Tao, Roger Guzman, Qing Luo, Wu Zhou, Yang Yang, Yingfen Wei, Yu LiuPengfei Jiang, Yuting ChenShuxian Lv, Yaxin DingWei Wei, Tiancheng GongYan WangQi Liu, Shixuan Du & Ming Liu. (2023) A stable rhombohedral phase in ferroelectric Hf(Zr) 1+ x O 2 capacitor with ultralow coercive field . Science 381:6657, pages 558-563.
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L. A. Delimova & V. S. Yuferev. (2023) Charge Carrier Transport and Polarization in M/PZT/M Structures. Bulletin of the Russian Academy of Sciences: Physics 87:4, pages 482-487.
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L. A. Delimova & V. S. Yuferev. (2018) Transient carrier transport and rearrangement of Schottky barrier layers under the action of a bias applied to the M/PZT/M structure. Journal of Applied Physics 124:18.
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J.F. Scott & Jonathan Gardner. (2018) Ferroelectrics, multiferroics and artifacts: Lozenge-shaped hysteresis and things that go bump in the night. Materials Today 21:5, pages 553-562.
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Peilian Li, Zhifeng Huang, Zhen Fan, Hua Fan, Qiuyuan Luo, Chao Chen, Deyang Chen, Min Zeng, Minghui Qin, Zhang Zhang, Xubing Lu, Xingsen Gao & Jun-Ming Liu. (2017) An Unusual Mechanism for Negative Differential Resistance in Ferroelectric Nanocapacitors: Polarization Switching-Induced Charge Injection Followed by Charge Trapping. ACS Applied Materials & Interfaces 9:32, pages 27120-27126.
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L. A. Delimova, E. V. Guschina, D. S. Seregin, K. A. Vorotilov & A. S. Sigov. (2017) Unexpected behavior of transient current in thin PZT films caused by grain-boundary conduction. Journal of Applied Physics 121:22.
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Liubov Delimova, Ekaterina Guschina, Nina Zaitseva, Sergey Pavlov, Dmitry Seregin, Konstantin Vorotilov & Alexander Sigov. (2017) Effect of seed layer with low lead content on electrical properties of PZT thin films. Journal of Materials Research 32:9, pages 1618-1627.
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Surendra Singh Barala, Basanta Roul, Nirupam Banerjee & Mahesh Kumar. (2016) Modulation of Pb chemical state of epitaxial lead zirconate titanate thin films under high energy irradiation. Journal of Applied Physics 120:11.
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J. Walenza-Slabe & B. J. Gibbons. (2016) Leakage current phenomena in Mn-doped Bi(Na,K)TiO3-based ferroelectric thin films. Journal of Applied Physics 120:8.
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Yu. V. Podgorny, P. P. Lavrov, K. A. Vorotilov & A. S. Sigov. (2015) Effect of spontaneous polarization change on current-voltage characteristics of thin ferroelectric films. Physics of the Solid State 57:3, pages 476-479.
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Yury Podgorny, Konstantin Vorotilov & Alexander Sigov. (2014) Negative differential conductivity in thin ferroelectric films. Applied Physics Letters 105:18, pages 182904.
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J. Li, H.-F. Zhang, G.-Q. Shao, B.-L. Wu & S.-X. Ouyang. (2014) Negative differential resistance: Another banana?. EPL (Europhysics Letters) 108:2, pages 27005.
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Zhou Da-Yu & Xu Jin. (2014) Ferroelectric and antiferroelectric properties of Si-doped HfO2 thin films. Acta Physica Sinica 63:11, pages 117703.
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Dayu Zhou, J. Müller, Jin Xu, S. Knebel, D. Bräuhaus & U. Schröder. (2012) Insights into electrical characteristics of silicon doped hafnium oxide ferroelectric thin films. Applied Physics Letters 100:8.
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Prikshit Gautam, Sudipta Bhattacharyya, Sushil K. Singh, Ravi Kumar & Ram Pal Tandon. (2011) Effect of zirconium doping on ferroelectric properties and leakage-current mechanism in Bi 3.25 La 0.75 Ti 3 O 12 (BLT) thin films . physica status solidi (b) 248:4, pages 1010-1017.
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C. Ostos, M.L. Martínez-Sarrión, L. Mestres, E. Delgado & P. Prieto. (2009) The influence of A-site rare-earth for barium substitution on the chemical structure and ferroelectric properties of BZT thin films. Journal of Solid State Chemistry 182:10, pages 2620-2625.
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Mehmet S. Bozgeyik, Jeffrey S. Cross, Hiroshi Ishiwara & Kazuo Shinozaki. (2009) Ferroelectric Properties of BaZrO 3 Doped Sr 0.8 Bi 2.2 Ta 2 O 9 Thin Films . Japanese Journal of Applied Physics 48:6R, pages 061403.
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Ashok Kumar, Ram S. Katiyar & J. F. Scott. (2009) Positive temperature coefficient of resistivity and negative differential resistivity in lead iron tunstate-lead zirconate titate. Applied Physics Letters 94:21, pages 212903.
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Ayan Roy Chaudhuri & S. B. Krupanidhi. (2005) dc leakage behavior in vanadium-doped bismuth titanate thin films. Journal of Applied Physics 98:9.
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F. D. Morrison, P. Zubko, D. J. Jung, J. F. Scott, P. Baxter, M. M. Saad, R. M. Bowman & J. M. Gregg. (2005) High-field conduction in barium titanate. Applied Physics Letters 86:15.
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M Dawber & J F Scott. (2004) Negative differential resistivity and positive temperature coefficient of resistivity effect in the diffusion-limited current of ferroelectric thin-film capacitors. Journal of Physics: Condensed Matter 16:49, pages L515-L521.
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Ji Cheul Bae, Sang Su Kim, Moon Heum Park, Ki Wan Jang, Yong Ill Lee & Jae-Sung Song. (2004) Electrical properties of samarium-substituted Bi4Ti3O12 thin films grown on p-type Si substrates. Journal of Crystal Growth 268:1-2, pages 204-209.
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Kyoung-Tae Kim & Chang-Il Kim. (2004) Electrical conduction behavior of ferroelectric Bi3.25La0.75Ti3O12 thin films prepared by a metalorganic decomposition method. Surface and Coatings Technology 177-178, pages 774-778.
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J. F. Scott, A. Q. Jiang, S. A. T. Redfern, Ming Zhang & M. Dawber. (2003) Infrared spectra and second-harmonic generation in barium strontium titanate and lead zirconate-titanate thin films: “Polaron” artifacts. Journal of Applied Physics 94:5, pages 3333-3344.
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Apurba Laha & S. B. Krupanidhi. (2002) Leakage current conduction of pulsed excimer laser ablated BaBi2Nb2O9 thin films. Journal of Applied Physics 92:1, pages 415-420.
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Joseph Ya-min Lee & Benjamin Chihming Lai. 2002. Handbook of Thin Films. Handbook of Thin Films 1 98 .
Soon-Gil Yoon, A. I. Kingon & Seung-Hyun Kim. (2000) Relaxation and leakage current characteristics of Pb1−xLax(ZryTi1−y)1−x/4O3 thin films with various Ir-based top electrodes. Journal of Applied Physics 88:11, pages 6690-6695.
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James F. ScottJames F. Scott. 2000. Ferroelectric Memories. Ferroelectric Memories 79 94 .
Chee Won Chung & Ilsub Chung. (1999) Effect of pre-annealing on physical and electrical properties of SrBi2Ta2O9 thin films prepared by chemical solution deposition. Thin Solid Films 354:1-2, pages 111-117.
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Tae Song Kim, Dong Joo Kim, Jeon Kook Leea & Hyung Jin Jung. (2011) Structural and electrical properties of excess PbO doped Pb(Zr 0.52 Ti 0.48 )O 3 thin films using rf magnetron sputtering method . Journal of Materials Research 13:12, pages 3436-3441.
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I. Stolichnov & A. Tagantsev. (1998) Space-charge influenced-injection model for conduction in Pb(ZrxTi1−x)O3 thin films. Journal of Applied Physics 84:6, pages 3216-3225.
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K. Watanabe, A. J. Hartmann, R. N. Lamb & J. F. Scott. (1998) Electronic characteristics of the SrBi2Ta2O9–Pt junction. Journal of Applied Physics 84:4, pages 2170-2175.
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M. Alexe, St. Senz, A. Pignolet, J. F. Scott, D. Hesse & U. Gösele. (2011) Direct Wafer Bonding and Layer Transfer: An Innovative way for the Integration of Ferroelectric Oxides into Silicon Technology. MRS Proceedings 493.
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James F. Scott. 1997. Thin Film Ferroelectric Materials and Devices. Thin Film Ferroelectric Materials and Devices 115 144 .
J.F. Scott, F.M. Ross, C.A. Paz de Araujo, M.C. Scott & M. Huffman. (2013) Structure and Device Characteristics of SrBi 2 Ta 2 O 9 -Based Nonvolatile Random-Access Memories . MRS Bulletin 21:7, pages 33-39.
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W. Zhu, Z. Q. Liu, W. Lu, M. S. Tse, H. S. Tan & X. Yao. (1996) A systematic study on structural and dielectric properties of lead zirconate titanate/(Pb,La)(Zr(1−x)Ti(x))O3 thin films deposited by metallo-organic decomposition technology. Journal of Applied Physics 79:8, pages 4283.
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Guido W. Dietz, Wolfgang Antpöhler, Mareike Klee & Rainer Waser. (1995) Electrode influence on the charge transport through SrTiO3 thin films. Journal of Applied Physics 78:10, pages 6113-6121.
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R. Waser. 1995. Science and Technology of Electroceramic Thin Films. Science and Technology of Electroceramic Thin Films 223 248 .
Chang Jung Kim, Dae Sung Yoon, Joon Sung Lee, Chaun Gi Choi, Wong Jong Lee & Kwangsoo No. (1994) Electrical characteristics of (100), (111), and randomly aligned lead zirconate titanate thin films. Journal of Applied Physics 76:11, pages 7478-7482.
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