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Integrated Ferroelectrics
An International Journal
Volume 17, 1997 - Issue 1-4
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Device integration

The role of buffer layer in strontium bismuth tantalate based ferroelectric gate mos structures for non-volatile non destructive read out memory applications

Myoungho Lim Microelectronics Research Laboratories, Department of Electrical and Computer Engineering, University of Colorado at Colorado Springs, Colorado Springs, CO 80933, USA
&
T. S. Kalkur Microelectronics Research Laboratories, Department of Electrical and Computer Engineering, University of Colorado at Colorado Springs, Colorado Springs, CO 80933, USA
Pages 433-441 | Published online: 19 Aug 2006

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Chang Ho Shin, Seon Yong Cha, Hee Chul Lee, Won-Jae Lee, Byoung-Gon Yu & Dong-Hwa Kwak. (2001) Fabrication and characterization of MFISFET using Al2O3 insulating layer for non-volatile memory. Integrated Ferroelectrics 34:1-4, pages 113-120.
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Kyu-Jeong Choi, Woong-Chul Shin & Soon-Gil Yoon. (2001) Characteristics of ferroelectric YMnO3 thin films for MFISFET by MOCVD. Integrated Ferroelectrics 34:1-4, pages 101-111.
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Sang-Shik Park & Soon-Gil Yoon. (2001) Characterization of the CeO2 thin films for insulation layer and Pt/SrBi2Ta2O9/CeO2/Si MFISFET structure. Integrated Ferroelectrics 40:1-5, pages 191-199.
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M. Lim & T.S. Kalkur. (1998) The role of leakge current on the memory window and memory retention in MFIS structure. Integrated Ferroelectrics 22:1-4, pages 205-211.
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K. Arita, S. Hayashi, T. Otsuki, Z. Chen, M. Lim, J.W. Bacon & C.A. Paz de Araujo. (1998) Characterization of ferroelectric gate Mos capacitors formed by mod technique for nonvolatile memory applications. Integrated Ferroelectrics 22:1-4, pages 143-152.
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Articles from other publishers (5)

Firman Mangasa Simanjuntak, Tahta Amrillah, A. Syed Jalaluddeen, V. Bipin & Suresh Kumar Garlapati. 2023. Perovskite Ceramics. Perovskite Ceramics 401 484 .
W. C. Shin, N. Y. Lee, S. O. Ryu, I. K. You, S. M. Cho, S. M. Yoon, B. G. Yu, J. B. Park, K. J. Choi, S. G. Yoon & W. J. Lee. (2003) Control of Crystallographic Orientation in Ferroelectric Bi[sub 3.15]La[sub 0.85]Ti[sub 3]O[sub 12] Thin Films by Rapid Thermal Annealing. Electrochemical and Solid-State Letters 6:8, pages F25.
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Kyu-Jeong Choi, Woong-Chul Shin & Soon-Gil Yoon. (2001) Ferroelectric YMnO3 thin films grown by metal-organic chemical vapor deposition for metal/ferroelectric/semiconductor field-effect transistors. Thin Solid Films 384:1, pages 146-150.
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Woong-Chul Shin, Jung-Hwan Yang, Kyu-Jeong Choi, Young-Ah Jeon & Soon-Gil Yoon. (2001) Characteristics of Pt/YMnO3/Y2O3/Si structure using a Y2O3 buffer layer grown by pulsed laser deposition. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 19:1, pages 239-243.
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Kyu-Jeong Choi, Woong-Chul Shin, Jung-Hwan Yang & Soon-Gil Yoon. (1999) Metal/ferroelectric/insulator/semiconductor structure of Pt/SrBi2Ta2O9/YMnO3/Si using YMnO3 as the buffer layer. Applied Physics Letters 75:5, pages 722-724.
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