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Integrated Ferroelectrics
An International Journal
Volume 21, 1998 - Issue 1-4
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Session 1. Device Integration Issues

Modeling of metal-ferroelectric-semiconductor field effect transistors

Todd C. Macleod NASA, Marshall Space Flight Center, Huntsville, Alabama, 35812
&
Fat Duen Ho Electrical and Computer Engineering Department, University of Alabama in Huntsville, Huntsville, Alabama, 35899
Pages 127-143 | Received 03 Apr 1998, Published online: 19 Aug 2006

Citations (9)

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Read on this site (8)

Mitchell Hunt, Rana Sayyah, ToddC. Macleod & FatD. Ho. (2012) A Mathematical Model for the Common-Drain Amplifier Using a Metal-Ferroelectric-Semiconductor Field Effect Transistor. Integrated Ferroelectrics 139:1, pages 106-115.
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Rana Sayyah, Mitchell Hunt, ToddC. MacLeod & FatD. Ho. (2011) Modeling a Common-Source Amplifier Using a Ferroelectric Transistor. Integrated Ferroelectrics 124:1, pages 147-156.
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RANA SAYYAH, MITCHELL HUNT, TODDC. MacLEOD & FATD. HO. (2010) A MATHEMATICAL MODEL OF A COMMON-DRAIN AMPLIFIER USING A FERROELECTRIC TRANSISTOR. Integrated Ferroelectrics 113:1, pages 49-62.
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ThomasA. Phillips, ToddC. Macleod & FatD. Ho. (2008) MODELING OF A FERROELECTRIC FIELD-EFFECT TRANSISTOR STATIC RANDOM ACCESS MEMORY CELL. Integrated Ferroelectrics 96:1, pages 69-74.
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ToddC. MacLeod & Fat Duen Ho. (2007) Modeling Ferroelectric Field Effect Transistor Characteristics from Micro to Nano. Ferroelectrics 350:1, pages 65-74.
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T.C. Macleod, T.A. Phillips & F.D. Ho. (2006) Characteristics of Ferroelectric Logic Gates Using a SPICE-Based Model. Ferroelectrics 333:1, pages 165-175.
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ToddC. Macleod & Fat Duen Ho. (2001) Electronic model of a Ferroelectric Field Effect transistor. Integrated Ferroelectrics 40:1-5, pages 55-64.
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MarkA. Bailey & Fat Duen Ho. (2000) An empirical ferroelectric capacitor model utilizing a dual curve-fit technique. Integrated Ferroelectrics 29:3-4, pages 273-282.
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Articles from other publishers (1)

Lei Qiang, Xiaoci Liang, Guangshuo Cai, Yanli Pei, Ruohe Yao & Gang Wang. (2018) Modeling drain current of indium zinc oxide thin film transistors prepared by solution deposition technique. Solid-State Electronics 144, pages 22-27.
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