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Integrated Ferroelectrics
An International Journal
Volume 21, 1998 - Issue 1-4
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Session 5. Materials Processing-PVD

Preparation of SrBi2Ta2O9 ferroelectric thin film by rf magnetron sputtering

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Pages 407-418 | Received 04 Mar 1998, Accepted 07 Apr 1998, Published online: 19 Aug 2006

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Takeshi Masuda, Yusuke Miyaguchi, Koukou Suu & Shan Sun. (2000) Preparation of SrBi2(Ta, Nb)2O9 thin films by rf sputtering for ferroelectric memory production. Integrated Ferroelectrics 31:1-4, pages 23-33.
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Shan Sun, GlenR. Fox & T. Domokos Hadnagy. (1999) SBTN thin film capacitors prepared by RF-magnetron sputtering. Integrated Ferroelectrics 26:1-4, pages 31-37.
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Articles from other publishers (3)

Binjian ZENG, Jiajia LIAO, Qiangxiang PENG, Min LIAO, Yichun ZHOU & Shun-ichiro OHMI. (2019) The Effect of Kr/O<sub>2</sub> Sputtering on the Ferroelectric Properties of SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub> Thin Film Formation. IEICE Transactions on Electronics E102.C:6, pages 441-446.
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B. K. Moon, K. Hironaka, C. Isobe & S. Hishikawa. (2001) Fabrication of ferroelectric SrBi2Ta2O9 capacitor films using plasma-assisted metalorganic chemical vapor deposition and their electrical properties. Journal of Applied Physics 89:11, pages 6370-6377.
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T. Masuda, Y. Miyaguchi, M. Tanimura, Y. Nishioka, K. Suu & N. Tani. (2001) Development of PZT sputtering method for mass-production. Applied Surface Science 169-170, pages 539-543.
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