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The Philosophical Magazine: A Journal of Theoretical Experimental and Applied Physics
Series 8
Volume 26, 1972 - Issue 2
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Original Articles

The annealing characteristics of phosphorous implanted silicon. I

R. W. Bicknell Allen Clark Research Centre, The Plessey Company Limited, Caswell, Towcester, Northants
Pages 273-286 | Received 28 Oct 1971, Published online: 02 Sep 2006

Citations (27)

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Read on this site (5)

B. J. Sealy. (1988) Ion implantation doping of semiconductors. Materials Science and Technology 4:6, pages 500-512.
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B. J. Sealy. (1988) Ion implantation doping of semiconductors. International Materials Reviews 33:1, pages 38-52.
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C.R. Allen & R.W. Bicknell. (1974) A study of 2 MeV helium-irradiated phosphorus-diffused silicon. The Philosophical Magazine: A Journal of Theoretical Experimental and Applied Physics 30:3, pages 483-500.
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E. Baldo, F. Cappellani & G. Restelli. (1973) Annealing behaviour of arsenic implants in silicon. Radiation Effects 19:4, pages 271-275.
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R.W. Bicknell. (1972) The annealing characteristics of phosphorus-implanted silicon Part II. The Philosophical Magazine: A Journal of Theoretical Experimental and Applied Physics 26:4, pages 911-927.
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Articles from other publishers (22)

Jun-Young Park, Dong-Il Moon, Geon-Beom Lee & Yang-Kyu Choi. (2020) Curing of Aged Gate Dielectric by the Self-Heating Effect in MOSFETs. IEEE Transactions on Electron Devices 67:3, pages 777-788.
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Jun-Young Park, Dong-Il Moon, Myeong-Lok Seol, Chang-Hoon Jeon, Gwang-Jae Jeon, Jin-Woo Han, Choong-Ki Kim, Sang-Jae Park, Hee Chul Lee & Yang-Kyu Choi. (2016) Controllable electrical and physical breakdown of poly-crystalline silicon nanowires by thermally assisted electromigration. Scientific Reports 6:1.
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Alexander Gumennik, Aharon J. Agranat, Igal Shachar & Michael Hass. (2005) Thermal stability of a slab waveguide implemented by α particles implantation in potassium lithium tantalate niobate. Applied Physics Letters 87:25.
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R.J. Schreutelkamp, J.S. Custer, J.R. Liefting, W.X. Lu & F.W. Saris. (1991) Pre-amorphization damage in ion-implanted silicon. Materials Science Reports 6:7-8, pages 275-366.
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G.A. Kachurin, I.E. Tyschenko, A.P. Mazhirin & E. Wieser. (1989) High-temperature phosphorus ion doping of silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 43:4, pages 535-538.
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S. N. Hsu, L. J. Chen & W. Y. Chao. (1989) Direct observation of discrete layers of dislocation loops near the projected ion ranges in high-dose P+-implanted (001)Si by cross-sectional transmission electron microscopy. Applied Physics Letters 55:6, pages 565-567.
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J.L. STONE & J.C. PLUNKETT. 1981. Impurity Doping Processes in Silicon. Impurity Doping Processes in Silicon 55 146 .
J. Krynicki & J. C. Bourgoin. (1979) Defect annealing in phosphorus implanted silicon: A D.L.T.S. study. Applied Physics 18:3, pages 275-278.
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C. Wagner & F. Burkhardt. (1978) The annealing characteristics of phosphorus-implanted silicon investigated at low temperatures. Physica Status Solidi (a) 47:1, pages 131-138.
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Heiner Ryssel & Ingolf RugeHeiner Ryssel & Ingolf Ruge. 1978. Ionenimplantation. Ionenimplantation 344 360 .
C.M. MELLIAR-SMITH. 1977. Properties and Microstructure. Properties and Microstructure 47 149 .
A. H. AgajanianA. H. Agajanian. 1976. Semiconducting Devices. Semiconducting Devices 214 310 .
N. P. Dikiy, P. P. Matyash, P. A. Svetashev, N. A. Skakun, V. K. Vasilev, E. I. Zorin, P. V. Pavlov & D. U. Tetelbaum. (1975) Lattice Location of Phosphorus Atoms Implanted into Silicon. Physica Status Solidi (a) 32:2, pages K165-K167.
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F. Eichhorn. (1975) Neutron and X-ray diffraction investigations of silicon implanted by phosphorus ions. Physica Status Solidi (a) 30:1, pages 155-162.
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J. F. C. Baker & R. Ogden. (1975) Crystal imperfections in silicon epitaxial layers grown on ion-implanted substrates. Journal of Materials Science 10:7, pages 1259-1261.
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H. Ryssel & H. Kranz. (1975) The electrical activation of implanted arsenic in silicon. Applied Physics 7:1, pages 11-14.
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Seiichi Hasegawa & Tatsuo Shimizu. (1975) Isothermal Annealing in P + Ion-Implanted Silicon . Journal of the Physical Society of Japan 38:3, pages 766-773.
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Wei-Kuo Wu & Jack Washburn. (1974) Identification of interstitial- and vacancy-type dislocation loops in ion-implanted silicon. Journal of Applied Physics 45:3, pages 1085-1090.
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F Cappellani, G Restelli & L Spinoni. (1974) Isothermal annealing of arsenic-implanted silicon. Journal of Physics C: Solid State Physics 7:3, pages L50-L53.
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Masao Tamura. (1973) Secondary defects in phosphorus-implanted silicon. Applied Physics Letters 23:12, pages 651-653.
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M. L. Jenkins, D. J. H. Cockayne & M. J. Whelan. (1973) The determination of the geometry and nature of small Frank loops using the weak-beam method. Journal of Microscopy 98:2, pages 155-164.
Crossref
J. J. Santiago, J. E. Ehret, W. R. Woody & Y. S. Park. 1973. Ion Implantation in Semiconductors and Other Materials. Ion Implantation in Semiconductors and Other Materials 353 362 .

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