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Research Article

Effect of dry heating with short-chain inulin on physicochemical properties of sweet potato starch

Efecto del calentamiento en seco con inulina de cadena corta en las propiedades fisicoquímicas del almidón de batata (camote)

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Pages 216-228 | Received 14 Oct 2019, Accepted 16 Feb 2020, Published online: 20 Mar 2020

Figures & data

Table 1. Treatments for modification of SPS with SI and dry heating.

Tabla 1. Tratamientos para la modificación de SPS con SI y calentamiento en seco

Table 2. Paste parameters of SPS and dry-heat-treated SPS with and without SI.

Tabla 2. Parámetros de pegado de SPS y SPS tratado con calor seco, con y sin SI

Figure 1. Pasting curves of SPS and dry-heat-treated SPS with and without SI.

Figura 1. Curvas de pegado de SPS y SPS tratado con calor seco, con y sin SI

Figure 1. Pasting curves of SPS and dry-heat-treated SPS with and without SI.Figura 1. Curvas de pegado de SPS y SPS tratado con calor seco, con y sin SI

Table 3. Thermal parameters of SPS and dry-heat-treated SPS with and without SI.

Tabla 3. Parámetros térmicos de SPS y SPS tratado con calor seco, con y sin SI

Figure 2. DSC thermographs of SPS and dry-heat-treated SPS with and without SI.

Figura 2. Termógrafos DSC de SPS y SPS tratado con calor seco, con y sin SI

Figure 2. DSC thermographs of SPS and dry-heat-treated SPS with and without SI.Figura 2. Termógrafos DSC de SPS y SPS tratado con calor seco, con y sin SI

Table 4. Textural parameters of gel prepared by SPS and dry-heat-treated SPS with or without SI.

Tabla 4. Parámetros texturales del gel preparado por SPS y SPS tratado con calor seco, con o sin SI

Figure 3. The change in the storage modulus (G’) and loss modulus (G”) of gel prepared by SPS and dry-heat-treated SPS with and without SI with frequency scanning. Close symbols are G’, open symbols are G”.

Figura 3. Cambio en el módulo de almacenamiento (G’) y el módulo de pérdida (G”) del gel preparado por SPS y SPS tratado con calor seco, con y sin SI, con escaneo de frecuencia. Los símbolos cerrados son G’, los símbolos abiertos son G”

Figure 3. The change in the storage modulus (G’) and loss modulus (G”) of gel prepared by SPS and dry-heat-treated SPS with and without SI with frequency scanning. Close symbols are G’, open symbols are G”.Figura 3. Cambio en el módulo de almacenamiento (G’) y el módulo de pérdida (G”) del gel preparado por SPS y SPS tratado con calor seco, con y sin SI, con escaneo de frecuencia. Los símbolos cerrados son G’, los símbolos abiertos son G”

Figure 4. The change in loss tangent (tan δ) of gel prepared by SPS and dry-heat-treated SPS with and without SI with frequency scanning.

Figura 4. Cambio en la tangente de pérdida (tan δ) del gel preparado por SPS y SPS tratado con calor seco, con y sin SI, con escaneo de frecuencia

Figure 4. The change in loss tangent (tan δ) of gel prepared by SPS and dry-heat-treated SPS with and without SI with frequency scanning.Figura 4. Cambio en la tangente de pérdida (tan δ) del gel preparado por SPS y SPS tratado con calor seco, con y sin SI, con escaneo de frecuencia

Figure 5. SEM of SPS and dry-heat-treated SPS with and without SI. a, b, c, d, e, f, and g are SEM for SI, SPS, SPS-H2, SPS-H4, SPS-SI, SPS-SI-H2, and SPS-SI-H4, respectively.

Figura 5. SEM de SPS y SPS tratado con calor seco, con y sin SI. a, b, c, d, e, f y g son SEM para SI, SPS, SPS-H2, SPS-H4, SPS-SI, SPS-SI-H2 y SPS-SI-H4, respectivamente

Figure 5. SEM of SPS and dry-heat-treated SPS with and without SI. a, b, c, d, e, f, and g are SEM for SI, SPS, SPS-H2, SPS-H4, SPS-SI, SPS-SI-H2, and SPS-SI-H4, respectively.Figura 5. SEM de SPS y SPS tratado con calor seco, con y sin SI. a, b, c, d, e, f y g son SEM para SI, SPS, SPS-H2, SPS-H4, SPS-SI, SPS-SI-H2 y SPS-SI-H4, respectivamente

Figure 5. (Continued)

Figure 5. (Continued)

Table 5. The granular size distribution of SPS and dry-heat-treated SPS with or without SI.

Tabla 5. Distribución del tamaño granular de SPS y SPS tratado con calor seco, con o sin SI

Figure 6. Differential distribution of granule size of SPS and dry-heat-treated SPS with or without SI. a, b, c, d, e, and f are granular size differential distribution for SPS, SPS-H2, SPS-H4, SPS-SI, SPS-SI-H2, and SPS-SI-H4, respectively.

Figura 6. Distribución diferencial del tamaño de gránulo de SPS y SPS tratado con calor seco, con o sin SI. a, b, c, d, e y f son distribuciones diferenciales del tamaño granular para SPS, SPS-H2, SPS-H4, SPS-SI, SPS-SI-H2 y SPS-SI-H4, respectivamente

Figure 6. Differential distribution of granule size of SPS and dry-heat-treated SPS with or without SI. a, b, c, d, e, and f are granular size differential distribution for SPS, SPS-H2, SPS-H4, SPS-SI, SPS-SI-H2, and SPS-SI-H4, respectively.Figura 6. Distribución diferencial del tamaño de gránulo de SPS y SPS tratado con calor seco, con o sin SI. a, b, c, d, e y f son distribuciones diferenciales del tamaño granular para SPS, SPS-H2, SPS-H4, SPS-SI, SPS-SI-H2 y SPS-SI-H4, respectivamente

Figure 6. (Continued)

Figure 6. (Continued)

Figure 7. X-ray diffraction patterns of SPS and dry-heat-treated SPS with and without SI.

Figura 7. Patrones de difracción de rayos X de SPS y SPS tratado con calor seco, con y sin SI

Figure 7. X-ray diffraction patterns of SPS and dry-heat-treated SPS with and without SI.Figura 7. Patrones de difracción de rayos X de SPS y SPS tratado con calor seco, con y sin SI