Figures & data
Table 1. Treatments for modification of SPS with SI and dry heating.
Tabla 1. Tratamientos para la modificación de SPS con SI y calentamiento en seco
Table 2. Paste parameters of SPS and dry-heat-treated SPS with and without SI.
Tabla 2. Parámetros de pegado de SPS y SPS tratado con calor seco, con y sin SI
Figure 1. Pasting curves of SPS and dry-heat-treated SPS with and without SI.
Figura 1. Curvas de pegado de SPS y SPS tratado con calor seco, con y sin SI
![Figure 1. Pasting curves of SPS and dry-heat-treated SPS with and without SI.Figura 1. Curvas de pegado de SPS y SPS tratado con calor seco, con y sin SI](/cms/asset/25dd92fd-5680-4dab-8619-8a070a01787c/tcyt_a_1732468_f0001_oc.jpg)
Table 3. Thermal parameters of SPS and dry-heat-treated SPS with and without SI.
Tabla 3. Parámetros térmicos de SPS y SPS tratado con calor seco, con y sin SI
Figure 2. DSC thermographs of SPS and dry-heat-treated SPS with and without SI.
Figura 2. Termógrafos DSC de SPS y SPS tratado con calor seco, con y sin SI
![Figure 2. DSC thermographs of SPS and dry-heat-treated SPS with and without SI.Figura 2. Termógrafos DSC de SPS y SPS tratado con calor seco, con y sin SI](/cms/asset/4f10c392-4592-4bed-a4e1-c8ec22134f99/tcyt_a_1732468_f0002_oc.jpg)
Table 4. Textural parameters of gel prepared by SPS and dry-heat-treated SPS with or without SI.
Tabla 4. Parámetros texturales del gel preparado por SPS y SPS tratado con calor seco, con o sin SI
Figure 3. The change in the storage modulus (G’) and loss modulus (G”) of gel prepared by SPS and dry-heat-treated SPS with and without SI with frequency scanning. Close symbols are G’, open symbols are G”.
Figura 3. Cambio en el módulo de almacenamiento (G’) y el módulo de pérdida (G”) del gel preparado por SPS y SPS tratado con calor seco, con y sin SI, con escaneo de frecuencia. Los símbolos cerrados son G’, los símbolos abiertos son G”
![Figure 3. The change in the storage modulus (G’) and loss modulus (G”) of gel prepared by SPS and dry-heat-treated SPS with and without SI with frequency scanning. Close symbols are G’, open symbols are G”.Figura 3. Cambio en el módulo de almacenamiento (G’) y el módulo de pérdida (G”) del gel preparado por SPS y SPS tratado con calor seco, con y sin SI, con escaneo de frecuencia. Los símbolos cerrados son G’, los símbolos abiertos son G”](/cms/asset/3c6c4d71-10ef-4c39-874f-bf7f17ac9fa6/tcyt_a_1732468_f0003_oc.jpg)
Figure 4. The change in loss tangent (tan δ) of gel prepared by SPS and dry-heat-treated SPS with and without SI with frequency scanning.
Figura 4. Cambio en la tangente de pérdida (tan δ) del gel preparado por SPS y SPS tratado con calor seco, con y sin SI, con escaneo de frecuencia
![Figure 4. The change in loss tangent (tan δ) of gel prepared by SPS and dry-heat-treated SPS with and without SI with frequency scanning.Figura 4. Cambio en la tangente de pérdida (tan δ) del gel preparado por SPS y SPS tratado con calor seco, con y sin SI, con escaneo de frecuencia](/cms/asset/ed672ea6-db7c-49d0-8938-00cc0666b188/tcyt_a_1732468_f0004_oc.jpg)
Figure 5. SEM of SPS and dry-heat-treated SPS with and without SI. a, b, c, d, e, f, and g are SEM for SI, SPS, SPS-H2, SPS-H4, SPS-SI, SPS-SI-H2, and SPS-SI-H4, respectively.
Figura 5. SEM de SPS y SPS tratado con calor seco, con y sin SI. a, b, c, d, e, f y g son SEM para SI, SPS, SPS-H2, SPS-H4, SPS-SI, SPS-SI-H2 y SPS-SI-H4, respectivamente
![Figure 5. SEM of SPS and dry-heat-treated SPS with and without SI. a, b, c, d, e, f, and g are SEM for SI, SPS, SPS-H2, SPS-H4, SPS-SI, SPS-SI-H2, and SPS-SI-H4, respectively.Figura 5. SEM de SPS y SPS tratado con calor seco, con y sin SI. a, b, c, d, e, f y g son SEM para SI, SPS, SPS-H2, SPS-H4, SPS-SI, SPS-SI-H2 y SPS-SI-H4, respectivamente](/cms/asset/3cd8bac7-88b7-4895-8510-f3ea88bf4cb7/tcyt_a_1732468_f0005a_b.gif)
Table 5. The granular size distribution of SPS and dry-heat-treated SPS with or without SI.
Tabla 5. Distribución del tamaño granular de SPS y SPS tratado con calor seco, con o sin SI
Figure 6. Differential distribution of granule size of SPS and dry-heat-treated SPS with or without SI. a, b, c, d, e, and f are granular size differential distribution for SPS, SPS-H2, SPS-H4, SPS-SI, SPS-SI-H2, and SPS-SI-H4, respectively.
Figura 6. Distribución diferencial del tamaño de gránulo de SPS y SPS tratado con calor seco, con o sin SI. a, b, c, d, e y f son distribuciones diferenciales del tamaño granular para SPS, SPS-H2, SPS-H4, SPS-SI, SPS-SI-H2 y SPS-SI-H4, respectivamente
![Figure 6. Differential distribution of granule size of SPS and dry-heat-treated SPS with or without SI. a, b, c, d, e, and f are granular size differential distribution for SPS, SPS-H2, SPS-H4, SPS-SI, SPS-SI-H2, and SPS-SI-H4, respectively.Figura 6. Distribución diferencial del tamaño de gránulo de SPS y SPS tratado con calor seco, con o sin SI. a, b, c, d, e y f son distribuciones diferenciales del tamaño granular para SPS, SPS-H2, SPS-H4, SPS-SI, SPS-SI-H2 y SPS-SI-H4, respectivamente](/cms/asset/1ba260bf-0c74-4cfb-879b-dbc4e2825188/tcyt_a_1732468_f0006a_oc.jpg)