2,303
Views
8
CrossRef citations to date
0
Altmetric
Optical, magnetic and electronic device materials

Strain-enhanced high Q-factor GaN micro-electromechanical resonator

, ORCID Icon, , , , & show all
Pages 515-523 | Received 26 Apr 2020, Accepted 02 Jul 2020, Published online: 27 Jul 2020

References

  • Espinosa HD, Bernal RA, Minary-Jolandan M. A review of mechanical and electromechanical properties of piezoelectric nanowires. Adv Mater. 2012;24(34):4656–4675.
  • Brueckner K, Niebelschuetz F, Tonisch K, et al. Micro- and nano-electromechanical resonators based on SiC and group III-nitrides for sensor applications. Phys Status Solidi A. 2011;208(2):357–376.
  • Ekinci KL, Roukes ML. Nanoelectromechanical systems. Rev Sci Instrum. 2005;76(6):061110.
  • Pearton SJ, Ren F. GaN Electronics. Adv Mater. 2000;12(21):1571–1580.
  • Rais-Zadeh M, Gokhale VJ, Ansari A, et al. Gallium nitride as an electromechanical material. J Microelectromech Syst. 2014;23(6):1252–1271.
  • Tanaka A, Choi W, Chen R, et al. Si complies with GaN to overcome thermal mismatches for the heteroepitaxy of thick GaN on Si. Adv Mater. 2017;29(38):1702557.
  • Eickhoff M, Schalwig J, Steinhoff G, et al. Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures-Part B: sensor applications. Phys Status Solidi (c). 2003;(6):1908–1918.
  • Stutzmann M, Steinhoff G, Eickhoff M, et al. GaN-based heterostructures for sensor applications. Diamond Relat Mater. 2002;11(3–6):886–891.
  • Pearton SJ, Kang BS, Kim S. et al. GaN-based diodes and transistors for chemical, gas, biological and pressure sensing. J Phys: Condens Mater. 2004;16(29):R961–R994.
  • Müller G. Krötz G and Schalk J. New sensors for automotive and aerospace applications. Phys Status Solidi (a). 2001;185(1):1–14.
  • Miller J, Ansari A, Heinz DB, et al. Effective quality factor tuning mechanisms in micromechanical resonators. Appl Phys Rev. 2018;5(4):041307.
  • Ghadimi AH, Fedorov SA, Engelsen NJ, et al. Elastic strain engineering for ultralow mechanical dissipation. Science. 2018;360(6390):764–768.
  • Cleland AN. Thermomechanical noise limits on parametric sensing with nanomechanical resonators. New J Phys. 2005;7:235.
  • Liao M, Toda M, Sang L, et al. Energy dissipation in micron- and submicron-thick single crystal diamond mechanical resonators. Appl Phys Lett. 2014;105(25):251904.
  • Verbridge SS, Parpia JM, Reichenbach RB, et al. High quality factor resonance at room temperature with nanostrings under high tensile stress. J Appl Phys. 2006;99(12):124304.
  • Bouwstra S, Geijselaers B On the resonance frequencies of microbridge. 1991 Proceeding International Conference on Solid-State Sensors Actuators (TRANSDUCERS ‘91), San Francisco, CA, USA; 1991. p. 538–542.
  • Brueckner K, Cimalla V, Niebelschütz F, et al. Strain- and pressure-dependent RF response of microelectromechanical resonators for sensing applications. J Micromech Microeng. 2007;17(10):2016–2023.
  • Unterreithmeier QP, Faust T, Kotthaus JP. Damping of nanomechanical resonators. Phys Rev Lett. 2010;105(2):027205.
  • Feng Y, Yang X, Chen J, et al. Anisotropic strain relaxation and high quality AlGaN/GaN heterostructures on Si (110) substrates. Appl Phys Lett. 2017;110(19):192104.
  • Zhao DG, Xu SJ, Xie MH, et al. Stress and its effect on optical properties of GaN epilayers grown on Si (111), 6H-SiC (0001), and c-plane sapphire. Appl Phys Lett. 2003;83(4):677.
  • Davydov VY, Averkiev NS, Goncharuk IN, et al. Raman and photoluminescence studies of biaxial strain in GaN epitaxial layers grown on 6H-SiC. J Appl Phys. 1997;82(10):5097.
  • Kisielowski C, Kru ̈ger J, Ruvimov S, et al. Strain-related phenomena in GaN thin films. Phys Rev B. 1996;54(24):17745.
  • Jeganathan K, Debnath RK, Meijers R, et al. Raman scattering from LO phonon-plasmon coupled modes in gallium nitride. J Appl Phys. 1994;75(2):1098.
  • Lee IH, Choi IH, Lee CR, et al. Stress relaxation in Si-doped GaN studied by Raman spectroscopy. J Appl Phys. 1998;83(11):5787.
  • Duan H, Gu W, Zhang J, et al. Characterization of GaN grown on 4H-SiC and sapphire by Raman spectroscopy and high resolution XRD. J Semicond. 2009;30(7):073001.
  • Metcalf TH, Pate BB, Photiadis DM, et al. Thermoelastic damping in micromechanical resonators. Appl Phys Lett. 2009;95(6):061963.
  • Photiadis DM, Judge JA. Attachment losses of high Q oscillators. Appl Phys Lett. 2004;85(3):482.
  • Schmid S, Villanueva LG, Roukes ML. Fundamental of nanomechanical resonators. Switzerland: Spinger International Publishing; 2016.
  • Tsaturyan Y, Barg A, Polzik ES, et al. Ultracoherent nanomechanical resonators via soft clamping and dissipation dilution. Nat Nanotechnol. 2017;12:776–783.
  • Fedorov SA, Engelsen NJ, Ghadimi AH, et al. Generalized dissipation dilution in strained mechanical resonators. Phys Rev B. 2019;99(5):054107.