Cylindrically symmetric rotating crystals observed in crystallization process of InSiO film

References

• McMullan D. Scanning electron microscopy 1928–1965. Scanning. 1995;17:175–14. doi: 10.1002/sca.4950170309
   Web of Science ®Google Scholar
• Ding ZJ, Shimizu R. A monte carlo modeling of electron interaction with solids including cascade secondary electron production. Scanning. 1996;18:92–113. doi: 10.1002/sca.1996.4950180204
   Web of Science ®Google Scholar
• Zou YB, Mao SF, Da B, et al. Surface sensitivity of secondary electrons emitted from amorphous solids: calculation of mean escape depth by a monte carlo method. J Appl Phys. 2016;120(23):235102. doi: 10.1063/1.4972196
   Web of Science ®Google Scholar
• Adams WIL, Plump CH. Half-tone photo-engraving. The photographic times. Waterbury: Scoville Manufacturing Co.; 1894.
   Google Scholar
• Zworykin VA, Hillier J, Snyder RL. A scanning electron microscope. ASTM Bull. 1942;117:15–23.
   Google Scholar
• Smith KC, Oatley CW. The scanning electron microscope and its fields of application. Br J Appl Phys. 1955;6(11):391–399. doi: 10.1088/0508-3443/6/11/304
   Web of Science ®Google Scholar
• Hejna J. Detection of topographic contrast in the scanning electron microscope at low and medium resolution by different detectors and detector systems. Scanning Microsc. 1994;8:143–164.
   Google Scholar
• Da B, Mao SF, Zhang GH, et al. Monte carlo modeling of surface excitation in reflection electron energy loss spectroscopy spectrum for rough surfaces. J Appl Phys. 2012;112(3):034310. doi: 10.1063/1.4739491
   Web of Science ®Google Scholar
• Da B, Mao SF, Zhang GH, et al. Influence of surface roughness on elastically backscattered electrons. Surf Interface Anal. 2012;44(6):647–652. doi: 10.1002/sia.4807
   Web of Science ®Google Scholar
• Da B, Salma K, Ji H, et al. Surface excitation parameter for rough surfaces. Appl Surf Sci. 2015;356:142–149. doi: 10.1016/j.apsusc.2015.08.056
   Web of Science ®Google Scholar
• Lloyd GE. Atomic number and crystallographic contrast images with the SEM: a review of backscattered electron techniques. Mineral Mag. 1987;51(359):3–19. doi: 10.1180/minmag.1987.051.359.02
   Web of Science ®Google Scholar
• Allen LJ, D’Alfonso AJ, Findlay SD, et al. Elemental mapping in scanning transmission electron microscopy. J Phys Conf Ser. 2010;241:012061. doi: 10.1088/1742-6596/241/1/012061
   Google Scholar
• Da B, Mao SF, Ding ZJ. Validity of the semi-classical approach for calculation of the surface excitation parameter. J Phys Condens Matter. 2011;23(39):395003. doi: 10.1088/0953-8984/23/39/395003
   PubMed Web of Science ®Google Scholar
• Da B, Sun Y, Mao SF, et al. Systematic calculation of the surface excitation parameters for 22 materials. Surf Interface Anal. 2013;45(3):773–780. doi: 10.1002/sia.5164
   Web of Science ®Google Scholar
• Shibata N, Findlay SD, Sasaki H, et al. Imaging of built-in electric field at a pn junction by scanning transmission electron microscopy. Sci Rep. 2015;5:1–8. doi: 10.1038/srep10040
   Web of Science ®Google Scholar
• Hachtel JA, Idrobo JC, Chi M. Sub-Ångstrom electric field measurements on a universal detector in a scanning transmission electron microscope. Adv Struct Chem Imaging. 2018;4(1):1–10. doi: 10.1186/s40679-018-0059-4
   PubMedGoogle Scholar
• Jones GA. Magnetic contrast in the scanning electron microscope: an appraisal of techniques and their applications. J Magn Magn Mater. 1978;8(4):263–285. doi: 10.1016/0304-8853(78)90096-3
   Web of Science ®Google Scholar
• Kotera M, Katoh M, Suga HSH. Observation technique of surface magnetic structure using type-I magnetic contrast in the scanning electron microscope. Jpn J Appl Phys. 1995;34(12S):6903. doi: 10.1143/JJAP.34.6903
   Google Scholar
• Li C, Da B, Ding ZJ. Monte carlo study on the surface potential measurement using the peak-shift method. Appl Surf Sci. 2020;504:144138. doi: 10.1016/j.apsusc.2019.144138
   Web of Science ®Google Scholar
• Li C, Tőkési K, Repetto L, et al. A monte carlo calculation of the secondary electron emission in the backward direction from a SiO2 macro-capillary. Eur Phys J D. 2020;74(2):37. doi: 10.1140/epjd/e2020-100268-6
   Web of Science ®Google Scholar
• Ding ZJ, Li C, Da B, et al. Charging effect induced by electron beam irradiation: a review. Sci Technol Adv Mater. 2021;22(1):932–971. doi: 10.1080/14686996.2021.1976597
   PubMed Web of Science ®Google Scholar
• Da B, Liu J, Yamamoto M, et al. Virtual substrate method for nanomaterials characterization. Nature Commun. 2017;8(1):1–9. doi: 10.1038/ncomms15629
   PubMedGoogle Scholar
• Da B, Liu J, Harada Y, et al. Observation of plasmon energy gain for emitted secondary electron in vacuo. J Phy Chem Lett. 2019;10:5770–5775. doi: 10.1021/acs.jpclett.9b02135
   PubMed Web of Science ®Google Scholar
• Da B, Liu X, Gong JM, et al. Emitted secondary electrons: in vacuo plasmon energy gain observation using a three-point probe method. Appl Surf Sci. 2022;596:153616. doi: 10.1016/j.apsusc.2022.153616
   Google Scholar
• Howie A, Whelan MJ. Diffraction contrast of electron microscope images of crystal lattice defects-II. The development of a dynamical theory. Proc R Soc A Math Phys Eng Sci. 1961;263:217–237.
   Web of Science ®Google Scholar
• Crimp MA. Scanning electron microscopy imaging of dislocations in bulk materials, using electron channeling contrast. Microsc Res Tech. 2006;69(5):374–381. doi: 10.1002/jemt.20293
   PubMed Web of Science ®Google Scholar
• Gutierrez-Urrutia I, Zaefferer S, Raabe D. Electron channeling contrast imaging of twins and dislocations in twinning-induced plasticity steels under controlled diffraction conditions in a scanning electron microscope. Scr Mater. 2009;61(7):737–740. doi: 10.1016/j.scriptamat.2009.06.018
   Web of Science ®Google Scholar
• Ruan Z, Zeng RG, Ming Y, et al. Quantum-trajectory monte carlo method for study of electron–crystal interaction in STEM. Phys Chem Chem Phys. 2015;17(27):17628–17637. doi: 10.1039/C5CP02300A
   PubMed Web of Science ®Google Scholar
• Kriaa H, Guitton A, Maloufi N. Fundamental and experimental aspects of diffraction for characterizing dislocations by electron channeling contrast imaging in scanning electron microscope. Sci Rep. 2017;7(1):9742. doi: 10.1038/s41598-017-09756-3
   PubMedGoogle Scholar
• Hata S, Furukawa H, Gondo T, et al. Electron tomography imaging methods with diffraction contrast for materials research. Microsc. 2020;69:141–155. doi: 10.1093/jmicro/dfaa002
   PubMed Web of Science ®Google Scholar
• Cheng L, Yang L, Zeng R, et al. Theoretical perspective of atomic resolution secondary electron imaging. J Phys Chem C. 2021;125(19):10458–10472. doi: 10.1021/acs.jpcc.1c01382
   Web of Science ®Google Scholar
• Schwartz AJ, Kumar M, Adams BL, et al. Electron backscatter diffraction in materials science. New York: Springer US; 2009. doi: 10.1007/978-0-387-88136-2
   Google Scholar
• Ding X, Da B, Gong JB, et al. Quantification of surface roughness effect on elastically backscattered electrons. Surf Interface Anal. 2014;46(7):489–496. doi: 10.1002/sia.5554
   Web of Science ®Google Scholar
• Hussain A, Yang L, Mao SF, et al. Determination of electron backscattering coefficient of beryllium by a high-precision monte carlo simulation. Nucl Mater Energy. 2021;26:100862. doi: 10.1016/j.nme.2020.100862
   Web of Science ®Google Scholar
• Yang L, Hussain A, Mao SF, et al. Electron backscattering coefficients of molybdenum and tungsten based on the monte carlo simulations. J Nucl Mater. 2021;553:153042. doi: 10.1016/j.jnucmat.2021.153042
   Web of Science ®Google Scholar
• Bragg WL. The diffraction of short electromagnetic waves by a crystal. Proc Camb Philos Soc. 1913;17:43–57.
   Google Scholar
• Cheng L, Ming Y, Ding ZJ. Bohmian trajectory-bloch wave approach to dynamical simulation of electron diffraction in crystal. New J Phys. 2018;20(11):113004. doi: 10.1088/1367-2630/aae8f1
   Google Scholar
• Hirsch PB, Howie A, Nicholson RB, et al. Electron microscopy of thin crystals. London: Butterworths; 1977.
   Google Scholar
• Kikuchi S. Electron diffraction in single crystals. Jpn J Appl Phys. 1928;5:83–96.
   Google Scholar
• Coates DG. Kikuchi-like reflection patterns obtained with the scanning electron microscope. Philos Mag. 1967;16(144):1179–1184. doi: 10.1080/14786436708229968
   Web of Science ®Google Scholar
• Joy DC, Newbury DE, Davidson DL. Electron channeling patterns in the scanning electron microscope. J Appl Phys. 1982;53(8):R81–R122. doi: 10.1063/1.331668
   Web of Science ®Google Scholar
• Venables JA, Harland CJ. Electron backscattering patterns—A new technique for obtaining crystallographic information in the scanning electron microscope. Philos Mag. 1973;27:1193–1200. doi: 10.1080/14786437308225827
   Web of Science ®Google Scholar
• Langer E, Däbritz S. Investigation of HOLZ rings in EBSD patterns. Phys Status Solidi C. 2007;4(6):1867–1872. doi: 10.1002/pssc.200675229
   Google Scholar
• Mitoma N, Da B, Yoshikawa H, et al. Phase transitions from semiconductive amorphous to conductive polycrystalline in indium silicon oxide thin films. Appl Phys Lett. 2016;109(22):221903. doi: 10.1063/1.4968810
   Web of Science ®Google Scholar
• Aikawa S, Nabatame T, Tsukagoshi K. Effects of dopants in InOx-based amorphous oxide semiconductors for thin-film transistor applications. Appl Phys Lett. 2013;103(17):172105. doi: 10.1063/1.4822175
   Web of Science ®Google Scholar
• Mitoma N, Aikawa S, Gao X, et al. Stable amorphous In2O3-based thin-film transistors by incorporating SiO2 to suppress oxygen vacancies. Appl Phys Lett. 2014;104(10):102103. doi: 10.1063/1.4868303
   Web of Science ®Google Scholar
• Venables JA, Spiller GDT. Nucleation and growth of thin films. In: Binh VT, editor. Surface mobilities on solid materials. MA: Springer US; 1983. p. 341–404. doi: 10.1007/978-1-4684-4343-1_16
   Google Scholar
• Evans JW, Thiel PA, Bartelt MC. Morphological evolution during epitaxial thin film growth: formation of 2D islands and 3D mounds. Surf Sci Rep. 2006;61(1–2):1–128. doi: 10.1016/j.surfrep.2005.08.004
   Web of Science ®Google Scholar
• Gonzalez D, Kelleher JF, da Fonseca JQ, et al. Macro and intergranular stress responses of austenitic stainless steel to 90 strain path changes. Mater Sci Eng A. 2012;546:263–271. doi: 10.1016/j.msea.2012.03.064
   Web of Science ®Google Scholar
• Shigeto K, Kizu T, Tsukagoshi K, et al. Radial interference contrast in in-situ SEM observation of metal oxide semiconductor film crystallization. Microsc Microanal. 2017;23(S1):1512–1513. doi: 10.1017/S1431927617008224
   Google Scholar
• Zhou S, Antoja-Lleonart J, Nukala P, et al. Crystallization of GeO2 thin films into α-quartz: from spherulites to single crystals. Acta Mater. 2021;215:117069. doi: 10.1016/j.actamat.2021.117069
   Web of Science ®Google Scholar
• Tanuma S, Powell CJ, Penn DR. Calculations of electron inelastic mean free paths. V. Data for 14 organic compounds over the 50–2000 eV range. Surf Interface Anal. 1994;21:165–176. doi: 10.1002/sia.740210302
   Web of Science ®Google Scholar
• Liu X, Hou Z, Lu D, et al. Unveiling the principle descriptor for predicting the electron inelastic mean free path based on a machine learning framework. Sci Technol Adv Mater. 2019;20(1):1090–1102. doi: 10.1080/14686996.2019.1689785
   PubMed Web of Science ®Google Scholar
• Liu X, Yang LH, Hou Z, et al. Machine learning approach for the prediction of electron inelastic mean free paths. Phys Rev Mater. 2021;5(3):033802. doi: 10.1103/PhysRevMaterials.5.033802
   Web of Science ®Google Scholar
• Mehnaz YL, Da B, Ding ZJ. Ensemble machine learning methods: predicting electron stopping powers from a small experimental database. Phys Chem Chem Phys. 2021;23:6062–6074. doi: 10.1039/D0CP06521H
   PubMed Web of Science ®Google Scholar
• Da B, Mao SF, Sun Y. A new analytical method in surface electron spectroscopy: reverse monte carlo method. E-J Surf Sci Nanotechnol. 2012;10:441–446. doi: 10.1380/ejssnt.2012.441
   Google Scholar
• Da B, Sun Y, Mao SF, et al. A reverse monte carlo method for deriving optical constants of solids from reflection electron energy-loss spectroscopy spectra. J Appl Phys. 2013;113(21):214303. doi: 10.1063/1.4809544
   Web of Science ®Google Scholar
• Xu H, Da B, Tóth J, et al. Absolute determination of optical constants by reflection electron energy loss spectroscopy. Phys Rev B. 2017;95(19):195417. doi: 10.1103/PhysRevB.95.195417
   Web of Science ®Google Scholar
• Xu H, Yang LH, Da B, et al. Study of optical and electronic properties of nickel from reflection electron energy loss spectra. Nucl Inst Meth Phys Res B. 2017;406:475–481. doi: 10.1016/j.nimb.2017.04.060
   Web of Science ®Google Scholar
• Xu H, Yang LH, Tóth J, et al. Absolute determination of optical constants of three transition metals using reflection electron energy loss spectroscopy. J Appl Phys. 2018;123(4):043306. doi: 10.1063/1.5012013
   Web of Science ®Google Scholar
• Yang LH, Tőkési K, Tóth J, et al. Optical properties of silicon and germanium determined by high-precision analysis of reflection electron energy loss spectroscopy spectra. Phys Rev B. 2019;100(24):245209. doi: 10.1103/PhysRevB.100.245209
   Web of Science ®Google Scholar
• Yang LH, Gong JM, Sulyok A, et al. Optical properties of amorphous carbon determined by reflection electron energy loss spectroscopy spectra. Phys Chem Chem Phys. 2021;23(44):25335–25346. doi: 10.1039/D1CP02447G
   PubMed Web of Science ®Google Scholar
• Da B, Shinotsuka H, Yoshikawa H, et al. Extended mermin method for calculating the electron inelastic mean free path. Phys Rev Lett. 2014;113(6):063201. doi: 10.1103/PhysRevLett.113.063201
   PubMed Web of Science ®Google Scholar
• Shinotsuka H, Tanuma S, Powell CJ, et al. Calculations of electron inelastic mean free paths. X. Data for 41 elemental solids over the 50 eV to 200 keV range with the relativistic full Penn algorithm. Surf Interface Anal. 2015;47:871–888. ibid, Surf Interface Anal. 2015;47:1132. doi: 10.1002/sia.5789
   Web of Science ®Google Scholar
• Shinotsuka H, Da B, Tanuma S, et al. Calculations of electron inelastic mean free paths. XI. Data for liquid water for energies from 50 eV to 30 keV. Surf Interface Anal. 2017;49(4):238–252. doi: 10.1002/sia.6123
   PubMed Web of Science ®Google Scholar
• Yang LH, Tőkési K, Da B, et al. Determination of electron inelastic mean free path of three transition metals from reflection electron energy loss spectroscopy spectrum measurement data. Eur Phys J D. 2019;73(2):1–19. doi: 10.1140/epjd/e2018-90551-6
   Web of Science ®Google Scholar
• Shinotsuka H, Tanuma S, Powell CJ, et al. Calculations of electron inelastic mean free paths. XII. Data for 42 inorganic compounds over the 50 eV to 200 keV range with the full Penn algorithm. Surf Interface Anal. 2019;51(4):427–457. doi: 10.1002/sia.6598
   Web of Science ®Google Scholar
• Nguyen-Truong HT, Da B, Yang L. Low-energy electron inelastic mean free path for monolayer graphene. Appl Phys Lett. 2020;117(3):033103. doi: 10.1063/5.0016284
   Web of Science ®Google Scholar
• Peruzzo M, Trioni A, Hassani F, et al. Surpassing the resistance quantum with a geometric superinductor. Phys Rev Appl. 2020;14(4):044055. doi: 10.1103/PhysRevApplied.14.044055
   Web of Science ®Google Scholar
• Da B, Liu X, Yang LH, et al. Evaluation of dielectric function models for calculation of electron inelastic mean free path. J Appl Phys. 2022;131(17):175301. doi: 10.1063/5.0085984
   Web of Science ®Google Scholar
• Yang LH, Da B, Yoshikawa H, et al. Low-energy electron inelastic mean free path and elastic mean free path of graphene. Appl Phys Lett. 2021;118(5):053104. doi: 10.1063/5.0029133
   Web of Science ®Google Scholar
• Lutjes NR, Zhou S, Antoja-Lleonart J, et al. Spherulitic and rotational crystal growth of quartz thin films. Sci Rep. 2021;11(1):1–12. doi: 10.1038/s41598-021-94147-y
   PubMed Web of Science ®Google Scholar
• Kooi BJ, De Hosson JTM. On the crystallization of thin films composed of Sb 3.6 Te with Ge for rewritable data storage. J Appl Phys. 2004;95(9):4714–4721. doi: 10.1063/1.1690112
   Web of Science ®Google Scholar
• Savytskii D, Jain H, Tamura N, et al. Rotating lattice single crystal architecture on the surface of glass. Sci Rep. 2016;6(1):1–10. doi: 10.1038/srep36449
   PubMedGoogle Scholar
• Shtukenberg AG, Punin YO, Gujral A, et al. Growth actuated bending and twisting of single crystals. Angew Chem Int Ed. 2014;53(3):672–699. doi: 10.1002/anie.201301223
   PubMed Web of Science ®Google Scholar
• Kolosov VY, Thölen AR. Transmission electron microscopy studies of the specific structure of crystals formed by phase transition in iron oxide amorphous films. Acta Mater. 2000;48(8):1829–1840. doi: 10.1016/S1359-6454(99)00471-1
   Web of Science ®Google Scholar
• Shtukenberg AG, Punin YO, Gunn E, et al. Spherulites. Chem Rev. 2012;112(3):1805–1838. doi: 10.1021/cr200297f
   PubMed Web of Science ®Google Scholar
• Shtukenberg A, Freundenthal J, Gunn E, et al. Glass-crystal growth mode for testosterone propionate. Cryst Growth Des. 2011;11(10):4458–4462. doi: 10.1021/cg200640g
   Web of Science ®Google Scholar
• Cui X, Rohl AL, Shtukenberg A, et al. Twisted aspirin crystals. J Am Chem Soc. 2013;135(9):3395–3398. doi: 10.1021/ja400833r
   PubMed Web of Science ®Google Scholar
• Shtukenberg AG, Punin YO, Gunn E, et al. The third ambient aspirin polymorph. Cryst Growth Des. 2017;17:3562–3566. doi: 10.1021/acs.cgd.7b00673
   Web of Science ®Google Scholar
• Sun CY, Gránásy L, Stifler CA, et al. Crystal nucleation and growth of spherulites demonstrated by coral skeletons and phase-field simulations. Acta Biomater. 2021;120:277–292. doi: 10.1016/j.actbio.2020.06.027
   PubMed Web of Science ®Google Scholar
• Bolotov IE, Kolosov VY, Kozhyn AV. Electron microscope investigation of crystals based on bend‐contour arrangement II. Bending phenomena of the crystal growth in an amorphous film. Phys Status Solidi A. 1982;72(2):645–654. doi: 10.1002/pssa.2210720226
   Google Scholar
• Kolosov VY, Shvamm KL, Gainutdinov RV, et al. Combined TEM-AFM study of “transrotational” spherulites growing in thin amorphous films. Bull Russ Acad Sci Phys. 2007;71(10):1442–1446. doi: 10.3103/S1062873807100280
   Google Scholar
• Kolosov VY, Schwamm CL, Gainutdinov RV, et al. Combined AFM-TEM studies of amorphous-crystalline transformation and interface in thin films of Se and Fe2O3. J Phys Conf Ser. 2008;100(8):082037. doi: 10.1088/1742-6596/100/8/082037
   Google Scholar
• Bagmut AG, Grigorov SN, Zhuchkov VA, et al. Morphology and conjugation of nanocrystals growing in Cr-O and VO amorphous films during annealing. Russ Phys J. 2007;50:1071–1078. doi: 10.1007/s11182-007-0157-6
   Google Scholar
• Kolosov VY, Schwamm CL, Steeds JW. TEM of lattice bending in crystallized areas of anodized Ta-O films. J Phys Conf Ser. 2008;100(8):082038. doi: 10.1088/1742-6596/100/8/082038
   Google Scholar
• Kolosov VY, Veretennikov LM, Startseva YB, et al. Electron microscopy study of a chalcogenide-based polycrystalline condensate microstructure: the effect of composition and thickness on internal lattice bending. Semiconductors. 2005;39:955–959. doi: 10.1134/1.2010692
   Web of Science ®Google Scholar
• Kolosov VY, Kozhin AV, Veretennikov LM, et al. Transrotational crystals growing in amorphous Cu-Te film. EMC. Vol. 2. Berlin: Springer; 2008. p. 343–344.
   Google Scholar
• Kolosov VY, Kozhin AV, Veretennikov LM, et al. EMC. Vol. 2. Berlin: Springer; 2008. p. 657–658. doi: 10.2147/opth.s2686
   Google Scholar