Molecular Simulation, Volume 31, Issue 12 (2005)

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Molecular Simulation, Volume 31, Issue 12 (2005)

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Editorials

Editorial
Guest editorial
Gerhard Goldbeck-Wood
Page: 795
Published online: 19 Aug 2006
CitationforGuest editorial | Full Text | PDF (24.8 KB)
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Original Articles

Article
Spin polarization in GaAs/Al0.24Ga0.76As heterostructures
A. Ashok, R. Akis, D. Vasileska & D. K. Ferry
Pages: 797-800
Published online: 19 Aug 2006
AbstractforSpin polarization in GaAs/Al0.24Ga0.76As heterostructures | Full Text | References | PDF (226.7 KB)
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Article
Computing fullerene encapsulation of non-metallic molecules: N2@C60 and NH3@C60
Z. Slanina, F. Uhlík, L. Adamowicz & S. Nagase
Pages: 801-806
Published online: 19 Aug 2006
AbstractforComputing fullerene encapsulation of non-metallic molecules: N2@C60 and NH3@C60 | Full Text | References | PDF (636.2 KB)
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Article
Model for compression of fullerenes and carbon nanotubes
P. Jindal & V. K. Jindal
Pages: 807-810
Published online: 19 Aug 2006
AbstractforModel for compression of fullerenes and carbon nanotubes | Full Text | References | PDF (149.2 KB)
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Article
Multiscale treatment of thin-film lubrication
Z.-B. Wu, D. J. Diestler & X. C. Zeng
Pages: 811-815
Published online: 19 Aug 2006
AbstractforMultiscale treatment of thin-film lubrication | Full Text | References | PDF (184.7 KB)
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Article
Simple atomistic modeling of dominant BmIn clusters in boron diffusion
J.-H. Yoo, C.-O. Hwang, B.-J. Kim & T. Won
Pages: 817-824
Published online: 19 Aug 2006
AbstractforSimple atomistic modeling of dominant BmIn clusters in boron diffusion | Full Text | References | PDF (827.6 KB)
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Article
2D quantum mechanical device modeling and simulation: Centre-channel (CC) and double-gate (DG) MOSFET
K.-D. Kim & T.-Y. Won
Pages: 825-830
Published online: 19 Aug 2006
Abstractfor2D quantum mechanical device modeling and simulation: Centre-channel (CC) and double-gate (DG) MOSFET | Full Text | References | PDF (470.3 KB)
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Article
Compact model of the quantum short-channel threshold voltage in symmetric Double-Gate MOSFET
D. Munteanu, J. L. Autran, S. Harrison, K. Nehari, O. Tintori & T. Skotnicki
Pages: 831-837
Published online: 19 Aug 2006
AbstractforCompact model of the quantum short-channel threshold voltage in symmetric Double-Gate MOSFET | Full Text | References | PDF (377.6 KB)
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Article
Compact modeling of the threshold voltage in silicon nanowire MOSFET including 2D-quantum confinement effects
J. L. Autran, K. Nehari & D. Munteanu
Pages: 839-843
Published online: 19 Aug 2006
AbstractforCompact modeling of the threshold voltage in silicon nanowire MOSFET including 2D-quantum confinement effects | Full Text | References | PDF (347.3 KB)
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Article
A compact model to predict quantized sub-band energy levels and inversion layer centroids of MOSFETs with a parabolic potential well approximation
J. He, M. S. Chan, C. Hu, X. Zhang & Y. Y. Wang
Pages: 845-850
Published online: 19 Aug 2006
AbstractforA compact model to predict quantized sub-band energy levels and inversion layer centroids of MOSFETs with a parabolic potential well approximation | Full Text | References | PDF (149.1 KB)
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Article
Topography simulation for structural analysis using cell advancing method
J.-G. Lee, S. Yoon & T. Won
Pages: 851-857
Published online: 19 Aug 2006
AbstractforTopography simulation for structural analysis using cell advancing method | Full Text | References | PDF (3.4 MB)
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Article
Electronic transport through a CNT-Pseudopeptide-CNT hybrid material
N. Bruque, R. R. Pandey, R. K. Lake, H. Wang & J. P. Lewis
Pages: 859-864
Published online: 19 Aug 2006
AbstractforElectronic transport through a CNT-Pseudopeptide-CNT hybrid material | Full Text | References | PDF (313.8 KB)
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